| 40 |
Kyung Min Kim, Duk Hwang Kwon, Jae Hyuck Jang, Jong Myeong Jeon, Min Hwan Lee, Seul Jie Song, Gun Hwan Kim, Jun Yeong Seok, Bora Lee, Seungwu Han, Miyoung Kim and Cheol Seong Hwang Microscopic Identity of the Conducting Filaments and Resistance Switching Mechanism in TiO2 Thin Film MRS spring meeting 2010, San Francisco Marriott, April 7 (2010), Invited |
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| 39 |
An Quan Jiang, Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park and Cheol Seong Hwang Unusual improvement in the functionality of ferroelectric films by using the inlaid Al2O3 tunnel switch layer IMF-ISAF 2009, Xi'an, China, August 23-26 (2009), Invited |
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| 38 |
G. Choi, J. Han, S. Lee, S. Kim, and C. Hwang A Mass-production Compatible Capacitor Technology for DRAMs with Design Rule Down to 20nm 215th ECS meeting, San Francisco, CA, May 24-29 (2009), Invited |
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| 37 |
Cheol Seong Hwang Unusual improvement in the functionality of ferroelectric films by using the inlaid Al2O3 tunnel switch layer 제 5차 강유전체 연합 심포지엄, 무주리조트, February 8-10 (2009), Invited |
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| 36 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Sang Young Lee, Hyung Suk Jung, Miyoung Kim, Cheol Seong Hwang, Gee-Man Kim, Kang Jun Choi, Jae Ho Choi, Jae Hak Jeong Structural Evolution and Electrical Properties of Al-Doped ALD HfO2 Thin Films and PEALD TaCxNy Metal Gate IWDTF 2008, Tokyo Institute of Technology, November 5-7 (2008), Invited |
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| 35 |
S. K. Kim, K. J. Choi, and C. S. Hwang Dielectric and Electrode Thin Films for Stack-Cell Structured DRAM Capacitors with sub 50-nm Design Rules The 6th Asian Meeting on Ferroelectrics, National Taipei University of Technology, Taipei, Taiwan, August 2-6 (2008), Invited |
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| 34 |
Cheol Seong Hwang Resistive switching memory devices using the metal/insulator/metal structure : A detailed model for the unipolar and bipolar resistive switching in TiO2 thin films The 7th Korea-Japan Conference on Ferroelectricity, Cheju International Center, Cheju National University, Jeju, Korea, August 6-9 (2008), Invited |
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| 33 |
Cheol Seong Hwang,Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Minha Seo, Kwang Duk Na, Mi Young Kim TaCxNy Metal Gate and HfO2 Dielectric Grown by Atomic Layer Deposition for Advanced Gate Stacks IUMRS-ICEM 2008, Sydney,Australia, July 28-August 1 (2008) |
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| 32 |
황철성 New Memory Devices and Technologies (FeRAM, MRAM, PcRAM and ReRAM) - Operation Principles and Processes 제15회 한국반도체학술대회, 보광 휘닉스 파크, February 20-22 (2008), Invited |
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| 31 |
Cheol Seong Hwang A detailed model for the filamentary resistive switching in TiO2 thin films New Non-Volatile Memory Workshop 2007, Industrial Technology Research Institute Hsinchu, Taiwan, November 19-20 (2007), Invited |
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