C.S. Hwang, and J-H. Park

Compositional variation of metal-organic chemical vapor deposited SrTiO₃ thin films along the capacitor hole having a diameter of 0.15 μm

13th International Symposium on Integrated Ferroelectrics, Colorado Springs, USA, March 11-14 (2001), Invited

C.S.Hwang, J.Song, S.Y.Kang, J.Park, H.R.Kim, Y.J.Cho, O.S.Kwon, J.C.Shin, K.H.Choi, S.Y.No, H.J.Kim and D.Y.Yang, C.H.Yang, Y.K.Han, C.J.Hwang

The high dielectric and ferroelectric capacitor technologies using all CVD processes

12th International Symposium on Integrated Ferroelectric, Aachen, Germany, March 14 (2000), Invited

 A comprehensive analysis of the dielectric and electrical conduction phenomena of (Ba,Sr)TiO₃ thin films grown by sputtering

11th International Symposium on Integrated  Ferroelectrics, Colorado Springs, Co., USA, March 8-10 (1999), Invited

Dielectric and charge injection properties of BST thin films for capacitor application in DRAMs

11th International Symposium on Applications of Ferroelectrics, Montreux, Switzerland, Aug 24-27 (1998), Inivted

(Ba,Sr)TiO₃ high dielectric thin films for ULSI DRAMs : a review on the process integration

40th Electronic Materials Conference, U. of Virginia, Challotesville, Virginia, USA, Jun 24-26 (1998), Invited

(Ba,Sr)TiO₃ thin films for ULSI DRAMs : material and processes

4th International Workshop on Oxide Electronics, Washington D.C., USA,Dec. 1997, Invited

A process integration of (Ba,Sr)TiO₃ capacitor into 256M DRAM

Meeting of Solid State Devices and Materials,H amamatsu, Japan, Sep (1997), Invited

Electrical performances of (Ba,Sr)TiO₃ capacitor fully integrated into 256M DRAM

Meeting of International Union of Material Research Society - ICA - 97, Makuhari, Japan, Sep (1997), Invited

A comparative study on the electrical conduction mechanisms of (Ba,Sr)TiO₃ thin films on Pt and IrO₂ electrodes

9th International Meeting on Ferroelectricity, Seoul, Korea, Aug 24-29 (1997), Invited