| 48 |
In Won Yeu, Cheol Seong Hwang, and Jung-Hae Choi Oxygen Adsorption Behavior of InAs Nanowire by Ab-initio Calculations IUMRS-ICEM2016, Suntec City, Singapore, July 4-8, 2016, Oral |
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| 47 |
Jaehong Park, Cheol Seong Hwang, and Jung-Hae Choi Optical control of the layer-index of electrons in polar-stacked MoS2 2016 한국세라믹학회 추계학술대회, 서울코엑스, Nov 23-25 (2016), Oral |
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| 46 |
Cheol Jin Cho, Jin-Sang Kim,
Cheol Seong Hwang and Seong Keun Kim Interface
engineering explosive crystallization of TiO2 films in low
temperature atomic layer deposition 2016 한국세라믹학회 추계학술대회, 서울코엑스, Nov 23-25 (2016), Oral |
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| 45 |
최정혜, 여인원, 한규승, Krishnamohan Thekkepat, Mahesh Chandran, 이승철, 황철성 Surface, adsorption/desorption and solid
solution of III-V compound semiconductors; First principle studies
2016 한국세라믹학회 추계학술대회, 서울 코엑스, Nov 23-25 (2016), invited (최정혜 박사님) |
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| 44 |
Sang Hyeon Kim and Cheol Seong Hwang The atomic layer deposited SrTiO3 films using thin seed layer and their improvement of dielectric properties for DRAM capacitor application AVS 63rd INTERNATIONAL SYMPOSIUM & EXHIBITION 2016, Nashville TN, 2016/11/6 ~ 11/11, Poster |
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| 43 |
Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang Examination on the effects of various sputter deposition conditions on ferroelectric Hf0.5Zr0.5O2 films ISAF/ECAPD/PFM Conference 2016, Darmstadt, August 21-25, 2016, poster |
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| 42 |
Seung Dam Hyun, Yu Jin Kim, Young Hwan Lee, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Keum Do Kim, Hyun Woo Park, and Cheol Seong Hwang Study on the Ferroelectric Switching Kinetics of Hf0.5Zr0.5O2 films after wake-up effect ISAF/ECAPD/PFM Conference 2016, Darmstadt, August 21-25, 2016,poster |
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| 41 |
Keum Do Kim, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Taehong Gwon, Cheol Seong Hwang Ferroelectric Engineered HfO2 thin film prepared by low temperature atomic layer deposition ISAF/ECAPD/PFM Conference 2016, Darmstadt, August 21-25, 2016, poster |
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| 40 |
Han Joon Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films ISAF/ECAPD/PFM Conference 2016, Darmstadt, August 21-25, 2016, oral |
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| 39 |
Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim. Taehwan Moon, Keum Do Kim, Seong Dam Hyun, and Cheol Seong Hwang Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 films by RF-sputtering method KJC-FE11, Sungkyunkwan University, Seoul, Korea, August 9th 2016, poster |
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