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28

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Franz Fengler, Thomas Mikolajick, Uwe Schroeder, and Cheol Seong Hwang

Optimization of dielectric and ferroelectric properties in Hf1-xZrxO2 for non-volatile ferroelectric memory applications

WoDIM 2016, Hotel Baia Verde, Catania, ITALY, June 30, 2016, Oral

27

Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang

Characterization of Ferroelectric Hf0.5Zr0.5O2 Films by RF-sputtering Method

Á¦12Â÷ À¯Àüü ¿¬ÇÕ ½ÉÆ÷Áö¾ö, ¹«ÁÖ ´öÀ¯»ê¸®Á¶Æ®, 2016. 1. 31.~2. 2., poster

26

Han Joon Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang

Study on the Two Step Polarization switching in Hf0.4Zr0.6O2 Thin Film Based on the First Order Phase Transition Theory

Á¦12Â÷ À¯Àüü ¿¬ÇÕ ½ÉÆ÷Áö¾ö, ¹«ÁÖ ´öÀ¯»ê¸®Á¶Æ®, 2016. 1. 31.~2. 2., poster

25

Keum Do Kim, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang

Ferroelectric Engineered HfO2 Films Induced by Gran Size Engineering through Atomic Layer Deposition Temperature Control

Á¦12Â÷ À¯Àüü ¿¬ÇÕ ½ÉÆ÷Áö¾ö, ¹«ÁÖ ´öÀ¯»ê¸®Á¶Æ®, 2016. 1. 31.~2. 2., poster

24

Cheol Hyun An, Woongkyu Lee, Min Jung Chung, Sang Hyeon Kim, ,Lansalot Clement, and Cheol Seong Hwang

Atomic layer deposition of Ru thin film and its application to a capacitor electrode

Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, oral

23

Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, poster

22

Taehwan Moon, Hae Jun Jung, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Sang Woon Lee and Cheol Seong Hwang

Influence of O3 treatment on carrier density of two-dimensional electron gas at a-Al2O3/SrTiO3 interface

Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, poster

21

Yun-Bin Kim, Chang-Su Seo, Sang-Yeop Jee, Suk-Jin Jung, Sin Keun Park, Jong-Seung Park, Jong Ho Lee, and Cheol Seong Hwang

Optimizing Process Condition of Inductively Coupled Plasma Etching for Bulk Aluminum

Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, poster

20

In Won Yeu, Cheol Seong Hwang and Jung-Hae Choi

Oxidation study on the (100), (110) and (111) surfaces of InAs by ab-initio calculations

Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, oral

19

Jaehong Park, Cheol Seong Hwang and Jung-Hae Choi

Ab-initio study on the effects of doping in mono and bilayer MoS2

Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, oral