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Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Franz Fengler, Thomas Mikolajick, Uwe Schroeder, and Cheol Seong Hwang Optimization of dielectric and ferroelectric properties in Hf1-xZrxO2 for non-volatile ferroelectric memory applications WoDIM 2016, Hotel Baia Verde, Catania, ITALY, June 30, 2016, Oral
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27 |
Young Hwan Lee, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang Characterization of Ferroelectric Hf0.5Zr0.5O2 Films by RF-sputtering Method Á¦12Â÷ À¯Àüü ¿¬ÇÕ ½ÉÆ÷Áö¾ö, ¹«ÁÖ ´öÀ¯»ê¸®Á¶Æ®, 2016. 1. 31.~2. 2., poster |
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Han Joon Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang Study on the Two Step Polarization switching in Hf0.4Zr0.6O2 Thin Film Based on the First Order Phase Transition Theory Á¦12Â÷ À¯Àüü ¿¬ÇÕ ½ÉÆ÷Áö¾ö, ¹«ÁÖ ´öÀ¯»ê¸®Á¶Æ®, 2016. 1. 31.~2. 2., poster |
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Keum Do Kim, Min Hyuk Park, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang Ferroelectric Engineered HfO2 Films Induced by Gran Size Engineering through Atomic Layer Deposition Temperature Control
Á¦12Â÷ À¯Àüü ¿¬ÇÕ ½ÉÆ÷Áö¾ö, ¹«ÁÖ ´öÀ¯»ê¸®Á¶Æ®, 2016. 1. 31.~2. 2., poster |
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24 |
Cheol Hyun An, Woongkyu Lee, Min Jung Chung, Sang Hyeon Kim, ,Lansalot Clement, and Cheol Seong Hwang Atomic layer deposition of Ru thin film and its application to a capacitor electrode Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, oral
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Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, poster
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Taehwan Moon, Hae Jun Jung, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Sang Woon Lee and Cheol Seong Hwang Influence of O3 treatment on carrier density of two-dimensional electron gas at a-Al2O3/SrTiO3 interface Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, poster
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Yun-Bin Kim, Chang-Su Seo, Sang-Yeop Jee, Suk-Jin Jung, Sin Keun Park, Jong-Seung Park, Jong Ho Lee, and Cheol Seong Hwang Optimizing Process Condition of Inductively Coupled Plasma Etching for Bulk Aluminum Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, poster
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In Won Yeu, Cheol Seong Hwang and Jung-Hae Choi Oxidation study on the (100), (110) and (111) surfaces of InAs by ab-initio calculations Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, oral
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Jaehong Park, Cheol Seong Hwang and Jung-Hae Choi Ab-initio study on the effects of doping in mono and bilayer MoS2 Á¦ 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2016³â 2¿ù 22ÀÏ-24ÀÏ, oral
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