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22

Sukin Kang, Jun Shik Kim, Younjin Jang, Yonghee Lee, Kwangmin Kim, Whayoung Kim and Cheol Seong Hwang*

Program/Erase characteristics of charge trap flash using atomic layer deposited (Zn,Sn)Ox channel layer

Hymap 2020-Special, ºÎ»ê ÇØ¿î´ë ±×¸°³ª·¡ È£ÅÚ, 2020³â 11¿ù 24ÀÏ-27ÀÏ, Poster

21

Younjin Jang, Jun Shik Kim, Sukin Kang, Jihun Kim, Yonghee LeeKwangmin Kim, Whayoung Kim, Heerang Choi, Nayeon KimTaeyong Eom, Taek-Mo Chung, Woojin Jeon, Sang Yoon Lee, Cheol Seong Hwang

Abnormal Electrical Properties in p-type SnO Thin-Film Transistors with Al2O3 Interfacial layer

Çѱ¹¼¼¶ó¹ÍÇÐȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, 2020³â 11¿ù 23ÀÏ-25ÀÏ, Oral


20

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Cation-Regulated Transformation Process for Uniform p-SnS Thin Film Deposition at Low Temperatures

Çѱ¹ Àü±âÀüÀÚÀç·áÇÐȸ ÇÏ°èÇмú´ëȸ, Æòâ, July 08-10 (2020), Oral

19

In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi

Effects of growth condition on the anisotropic growth and stacking behavior of GaAs polar nanowires: ab initio thermodynamics

Nano Korea 2020, Goyang, July 1-3 (2020), Oral

18

Gyuseung Han, In Won Yeu, Kun Hee Ye, Seung-Cheol Lee, Cheol Seong Hwang, and Jung-Hae Choi

Effects of composition and atomic configuration on the bandgap of Ga(As,Sb) solid solution using cluster expansion and ab initio thermodynamics

Nano Korea 2020, Goyang, July 1-3 (2020), Oral

17

Seung Dam Hyun, Baek Su Kim, Min Hyuk Park, Cheol Seong Hwang

A comparative study on the ferroelectric performances in atomic layer 

deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) and tetrakis(dimethylamino) precursors

Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2020³â 2¿ù 12-14ÀÏ, Oral

16

Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Haeng Ha Seo, and Cheol Seong Hwang*

Improvement in the surface morphology of the bottom Ru electrode for DRAM capacitor

Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2020³â 2¿ù 12-14ÀÏ, Oral

15

Yong Bin Lee, Hyeon Woo Park, Young Hwan Lee, Seung Dam Hyun, Bum Yong Kim, Hyun Ho Kim, and Cheol Seong Hwang

Polarization Switching and Discharging Behaviors of Hafnium Zirconium Oxide Based Ferroelectric Capacitors Connected with Paraelectric Capacitors

Á¦ 27ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2020³â 2¿ù 12-14ÀÏ, Poster

14

Nuo Xu, Tae Gyun Park, Ha Jin Kim, Xinglong Shao, Kyun Jean Yoon, Tae Hyung Park, Liang Fang, Kyung Min Kim, and  Cheol Seong Hwang

Introduction of new APBM Stateful Logics based on two antiparallel bipolar memristors

Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 20³â 2¿ù 12-14ÀÏ, Oral

13

In-Hwan Baek, Jung Joon Pyeon, Ga-Yeon Lee, Young Geun Song, Han sol Lee, Sung Ok Won, Taek-Mo Chung, Jeong Hwan Han, Chong-Yun Kang,  Cheol Seong Hwang, and Seong Keun Kim

Cation-Regulated Transformation Process for 2-D Tin Monosulfide Thin Film Deposition

Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 20³â 2¿ù 12-14ÀÏ, Oral