Cheol Seong Hwang

Atomic-Layer-Deposition of in-Situ Crystallized Ge2Sb2Te5 Alloy and GeTe/Sb2Te3 Superlattice, and Their Phase-Change Performance

239th ECS meeting with IMCS, Chicago, May 30^th
-June 3^rd (2021)

Hyeon Woo Park, and Cheol Seong Hwang

Review of ferroelectric field-effect transistors for three-dimensional storage applications

High k Workshop 2021 Dresden, Online, May 28^th (2021)

Hyeon Woo Park, and Cheol Seong Hwang

Ferroelectric field-effect transistors for the next-generation storage

5th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference, Chengdu, China, Mar 9^th-12^th,
(2021)

Cheol Seong Hwang

Can the negative capacitance of ferroelectric be useful?

2020 KPS (The Korean Physical Society) fall meeting, Oct 20^th -22^th (2020)

Cheol Seong Hwang

Theoretical Understanding of Nanoscale Ferroelectric Field-Effect-Transistor Having a Poly-Domain Structure

ECS PRiME 2020, Online, Oct 4^th -9^th (2020)

Cheol Seong Hang

Stacked Crossbar Array Composed of Self-Rectifying Resistive Switching Memory for Kernels of the Convolutional Neural Network

20th International Symposium on the Physics of Semiconductors
and Applications (ISPSA 2020), Jul 19^th-23^th, Jeju, Korea
(2020)

Cheol Seong Hang

ATOMIC-LAYER-DEPOSITION OF IN-SITU
CRYSTALLIZED GE2SB2TE5 ALLOY AND GETE/SB2TE3 SUPERLATTICE, AND THEIR PHASE-CHANGE PERFORMANCES

237^th ECS Meeting, Montreal, Canada, May 10^th-14^th, 2020, Invited

Cheol Seong Hang

Stacked Crossbar Array Composed of Self-rectifying Resistive Switching Memory for Kernels of the Convolutional Neural Network

4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference, Penag, Malaysia, Apr 6^th-21^th, 2020, Invited

Tae Hyung Park and Cheol Seong Hang

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory

236^th ECS Meeting, Atlanta, GA, Oct 13^th-17^th, 2019, Invited