Cheol Seong Hang

Atomic layer deposited Ta2O5 thin
film for the resistive switching memory

EuroCVD 22 Baltic ALD 16, Luxembourg, Jun 24^th-28^th, 2019, Invited

Cheol Seong Hang

What will come after V-NAND – Vertical resistive switching memory 

Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSI-TFT), Kyoto, Japan,
May 19^th-23^th, 2019, Invited

Cheol Seong Hwang

Negative Capacitance in Ferroelectric Thin Film

2019 China Semiconductor Technology
International Conference (CSTIC), Shanghai, China, Mar 18^th-19^th, 2019, Invited

Min Hyuk Park and Cheol Seong Hang

Properties and Mechanisms of Fluorite-Type Ferroelectrics

Materials Research Society (MRS)
2018, Phoenix, Arizona, Apr 2^nd– 6^th, 2018, Invited

Cheol Seong Hang

What will come after V-NAND - Vertical ReRAM?

Non-Volatile Memory Technology Symposium,
NVMTS 2018, Sendai, Japan, October 22^th-24^th, 2018, Invited

Cheol Seong Hang

Toward the commercialization of
ReRAM: vision and limitations

International Conference on Memristive Materials
(Memrisys) 2018, Beiging, China, Jul 3^rd-5^th, 2018, Invited

Cheol Seong Hang

Semiconductor R&D in Korea

International Conference on Nanoelectronics Strategy
(INS), Sendai, Japan, May 14^th-16^th, 2018, Invited

Cheol Seong Hang

Vertical Resistance Switching Memory for Data Storage and Cognitive Computing

5th IEEE Electron Devices Technology and Manufacturing
(EDTM) Conference, Kobe, Japan, Mar 13^th-16^th ,2018, Invited

Cheol Seong Hang

Negative capacitance: principle, practice, and limitation

China Semiconductor Technology International
Conference (CSTIC) 2018, Shanghai, China, Mar 11^th-12^th ,2018, Invited