| 42 |
Hyo Kyeom Kim, Hyung-Suk Jung, Jae Hyuck Jang, Jinho Park, Tae Joo Park, Seok-Hee Lee, and Cheol Seong Hwang Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film Journal of Applied Physics, 11, 110, 114107 (2011)
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| 41 |
Hyun Ju Lee, Min Hyuk Park, Yu Jin Kim, Cheol Seong Hwang, Jeong Hwan Kim, Hiroshi Funakubo, and Hiroshi Ishiwara Improved ferroelectric property of very thin Mn-doped BiFeO3 films by an inlaid Al2O3 tunnel switch Journal of Applied Physics, 7, 110, 074111 (2011)
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| 40 |
Minha Seo, Seong Keun Kim, Yo-Sep Min and Cheol Seong Hwang Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications Journal of Materials Chemistry, 46, 21, 18497-18502 (2011)
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| 39 |
Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, Yu Jin Kim, Jeong Hwan Kim, Jong Ho Lee, and Cheol Seong Hwang Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage Advanced Functional Materials, 22, 21, 4305-4313 (2011)
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| 38 |
Shinhyuk Yang, Kwang Hwan Ji, Un Ki Kim, Cheol Seong Hwang, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, and Jae Kyeong Jeong Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment Applied Physics Letters, 10, 99, 102103 (2011)
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| 37 |
Seok-Jun Won, Joon Rae Kim, Sungin Suh, Cheol Seong Hwang*, and Hyeong Joon Kim* Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica using Tris(tert-pentoxy)silanol ACS Applied Materials & Interfaces, 5, 3, 1633–1639 (2011)
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| 36 |
Wanjae Park, Ki-Woong Whang, Young Gwang Yoon, Jeong Hwan Kim, Sang-Ho Rha, and Cheol Seong Hwang High rate dry etching of InGaZnO by BCl3/O2 plasma Applied Physics Letters, 6, 99, 062110 (2011)
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| 35 |
Joohwi Lee, Kwang Duk Na, Seung-Cheol Lee, Cheol Seong Hwang and Jung-Hae Choi Effects of magnitude and direction of the biaxial compressive strain on the formation and migration of a vacancy in Ge by using density functional theory Journal of Applied Physics, 3, 110, 033504 (2011)
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| 34 |
Minha Seo, Sang Ho Rha, Seong Keun Kim, Jeong Hwan Han, Woongkyu Lee, Sora Han, and Cheol Seong Hwang The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application Journal of Applied Physics, 2, 110, 024105 (2011)
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| 33 |
Jeong Hwan Han, Sora Han, Woongkyu Lee, Sang Woon Lee, Seong Keun Kim, Julien Gatineau, Christian Dussarrat, and Cheol Seong Hwang Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode Applied Physics Letters, 2, 99, 022901 (2011)
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| 32 |
Gun Hwan Kim, Jong Ho Lee, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Kyung Min Kim, Hyung Dong Lee, Seung Wook Ryu, Tae Joo Park, and Cheol Seong Hwang Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments Applied Physics Letters, 26, 98, 262901 (2011)
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| 31 |
Hyung-Suk Jung, So-Ah Lee, Sang-ho Rha, Sang Young Lee, Hyo Kyeom Kim, Do Hyun Kim, Kyu Hwan Oh, Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee, and Cheol Seong Hwang Impacts of Zr composition in Hf1-xZrxOy gate dielectrics on their crystallization behavior and bias temperature instability characteristics IEEE Transactions on Electron Devices, 7, 58, 2094-2103 (2011)
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| 30 |
Seong Keun Kim†, Sora Han†, Jeong Hwan Han, Woongkyu Lee, and Cheol Seong Hwang Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents Physica Status Solidi Rapid Research Letters, 8, 5, 262-264 (2011)
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| 29 |
Hyun Ju Lee, Min Hyuk Park, Gun Hwan Kim, Jun Yeong Seok, Yu Jin Kim, Cheol Seong Hwang, and An Quan Jiang Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors Journal of Applied Physics, 11, 109, 114113 (2011)
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| 28 |
Jeong Hwan Kim, Un Ki Kim, Yoon Jang Chung, and Cheol Seong Hwang Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In-Ga-Zn-O thin film transistors under light illumination Applied Physics Letters, 23, 98, 232102 (2011)
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| 27 |
Deok-Yong Cho*, Jeong Hwan Kim, and Cheol Seong Hwang* Electron hopping interactions in amorphous ZnO films probed by x-ray absorption near edge structure analysis Applied Physics Letters, 22, 98, 222108 (2011)
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| 26 |
Seong Keun Kim, Sora Han, Gun Hwan Kim, Jae Hyuck Jang, Jeong Hwan Han, and Cheol Seong Hwang Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature Journal of The Electrochemical Society, 8, 158, D477-D481 (2011)
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| 25 |
Kyung Min Kim, Doo Seok Jeong and Cheol Seong Hwang Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook Nanotechnology, 25, 22, 254002 (2011)
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| 24 |
Kyung Min Kim, Byung Joon Choi, Min Hwan Lee, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Jeong Ho Yoon, Seungwu Han and Cheol Seong Hwang A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure Nanotechnology, 25, 22, 254010 (2011)
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| 23 |
SeungWook Ryu, Ho-Ki Lyeo, JongHo Lee, Young Bae Ahn, Gun Hwan Kim, Choon Hwan Kim, SooGil Kim, Se-Ho Lee,Ka Young Kim, Jong Hyeop Kim, WonKim, Cheol Seong Hwang* and Hyeong Joon Kim* SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory Nanotechnology, 25, 22, 254005 (2011)
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