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Total Papers : 656          Total Conferences : 938

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30

Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Eui-Sang Park, Manick Ha, Yoon Kyeung Lee*, and Cheol Seong Hwang*

Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage

ACS Appl. Mater. Interface (2020) DOI: 10.1021/acsami.0c03747
29

Hyun Jae Lee, Taehwan Moon, Seung Dam Hyun, Sukin Kang, and Cheol Seong Hwang

Characterization of a 2D Electron Gas at the Interface of Atomic-Layer Deposited Al2O3/ZnO Thin Films for a Field-Effect Transistor

Advanced Electronic Materials, 202000876 (2020)

28

Jun Shik Kim, Younjin Jang, Sukin Kang, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Woongkyu Lee*, and Cheol Seong Hwang*

Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

J. Phys. Chem. C (2020) DOI: 10.1021/acs.jpcc.0c07800

27

Aleksandra A. Koroleva, Anna G. Chernikova, Anastasia A. Chouprik, Evgeny S. Gornev, Aleksandr S. Slavich, Roman R. Khakimov, Evgeny V. Korostylev, Cheol Seong Hwang*, and Andrey M. Markeev*

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOxBased Memory Structures

ACS Appl. Mater. Interface (2020) DOI: 10.1021/acsami.0c14810
26

Roman I. Romanov, Maxim G. kozodaev, yury Y. Lebedinskii, Timofey V. Perevalov, Aleksandr S. Slavich, Cheol Seong Hwang*, and Andrey M. Markeev*

Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration

J. Phys. Chem. C, 124, 18156-18164 (2020)

25

Gyuseung Han, In Won Yeu, Jaehong Park, Kun Hee Ye, Seung-Cheol Lee, Cheol Seong Hwang, and Jung-Hae Choi

Effect of local strain energy to predict accurate phase diagram of III-V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As

J. Phys. D: Appl. Phys., 54, 045104 (2021)

24

In-Hwan Baek, Ah-Jin Cho, Sangtae Kim, Ga Yeon Lee, Jeong Hwan Han, Taek-Mo Chung, Seung-Hyub Baek, Chong-Yun Kang, Jin-Sang Kim, Cheol Seong Hwang*, and Seong Keun Kim*

Substrate Surface Modification for Enlarging Two-Dimensional SnS Grains at Low Temperatures

Chem. Mater., 32, 9026-9033 (2020)

23

Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park, Young Hwan Lee, Yong Bin Lee, Beom Yong Kim, Ho Hyun Kim, Baek Su Kim, and Cheol Seong Hwang

Field-Induced Ferroelectric Hf1-xZrxO2 Thin Films for High-k Dynamic Random Access Memory

Adv. Electron. Mater, 2000631 (2020)

22

In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi

An ab initio approach on the asymmetric stacking of GaAs 〈111〉 nanowires grown by a vapor–solid method

Nanoscale, DOI: 10.1039/d0nr02010a (2020)

21

Min Hyuk Park, Dong Hyun Lee, Kun Yang, Ju-Yong Park, Geun Taek Yu, Hyeon Woo Park, Monica Materano, Terence Mittmann, Patrick D. Lomenzo, Thomas Mikolajick, Uwe Schroeder and Cheol Seong Hwang

Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Journal of Materials Chemistry C, DOI: 10.1039/d0tc01695k (2020)

20

Jung Joon Pyeon‡, In-Hwan Baek‡, Young Geun Song, Gwang Su Kim, Ah-Jin Cho, Ga-Yeon Lee, Jeong Hwan Han, Taek-Mo Chung, Cheol Seong Hwang, Chong-Yun Kang*, and Seong Keun Kim*

Highly sensitive flexible NO2 sensor composed of vertically aligned 2D SnS2 operating at room temperatureaper subject

J. Mater. Chem. C, 8, 11874-11881 (2020)

19

Younjin Jang, Jun Shik Kim, Sukin Kang, Jihun Kim, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Heenang Choi, Nayeon Kim, Taeyong Eom, Taek-Mo Chung, Woojin Jeon, Sang Yoon Lee, and Cheol Seong Hwang

Comparative Study on the Gate-Induced Electrical Instability of p-Type SnO Thin-Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics

physica status solidi (RRL)–Rapid Research Letters, DOI: 10.1002/pssr.202000304 (2020)

18

Beom Yong Kim, Baek Su Kim, Seung Dam Hyun, Ho Hyun Kim, Yong Bin Lee, Hyun Woo Park, Min Hyuk Park and Cheol Seong Hwang

Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

Applied Physics Letters, 117, 022902 (2020)

17

Dohun Kim, Vladimir Kornijcuk, Cheol Seong Hwang, Doo Seok Jeong*

SPSNN: nth Order Sequence-Predicting Spiking Neural Network

IEEE Access (2020)

16

An Quan Jiang, Wen Ping Geng, Peng Lv, Jia-wang Hong, Jun Jiang, Chao Wang, Xiao Jie Chai, Jian Wei Lian, Yan Zhang, Rong Huang, David Wei Zhang, James F. Scott, and Cheol Seong Hwang

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

Nature Materials, DOI: 10.1038/s41563-020-0702-z (2020)

15

Yoon Kyeung Lee*, Eui-Sang Park*, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Manick Ha, and Cheol Seong Hwang

Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Co-injection

CRYSTAL GROWTH & DESIGN, DOI: 10.1021/acs.cgd.0c00457 (2020)

14

Dae Eun Kwon, Jihun Kim, Young Jae Kwon, Kyung Seok Woo, Jung Ho Yoon, and Cheol Seong Hwang

Area-Type Electronic Bipolar Resistive Siwtching of Pt/Al2O3/Si3N3.0/Ti with Forming-Free, Self-Rectification, and Nonlinear Characteristics

physica status solidi (RRL)–Rapid Research Letters., DOI: 10.1002/pssr.202000209 (2020)

13

Zhengchun Yang, Jianwen Wu, Peijun Li, Yuting Chen, Yu Yan, Bo Zhu, Cheol Seong Hwang, Wei Mi,  Jinshi Zhao, Kailiang Zhang,  Ruixuan Guo

Resistive random access memory based on gallium oxide thin films for selfpowered pressure sensor systems

Ceramics International, DOI: 10.1016/j.ceramint.2020.05.191 (2020)

12

Taehwan Moon, Hyun Jae Lee, Seung Dam Hyun, Baek Su Kim, Ho Hyun Kim, and Cheol Seong Hwang

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

Advanced Electronic Materials, DOI: 10.1002/aelm.201901286 (2020)

11

Dae Seon Kwon, Cheol Hyun An, Sang Hyeon Kim, Dong Gun Kim, Junil Lim, Woojin Jeon* and Cheol Seong Hwang*

Atomic layer deposition of Ru thin films using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru and the effect of ammonia treatment during the deposition

Journal of Materials Chemistry C, 8, 6993 - 7004 (2020)