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Total Papers : 624          Total Conferences : 902

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22

Chihoon Lee, Cheol Seong Hwang, and Hyeong Joon Kim

Comparison of the Electrical Properties of High-k Gate Dielectric (HfO2 and Al2O3) Films with Pt or n+-Oolycrystalline-Silicon Gate

Integrated Ferroelectrics, 1, 67, 49-57 (2004)

21

Yo-Sep Min, Young Jin Cho and Cheol Seong Hwang

Amorphous High k Dielectric  Bi1-x-yTixSiyOz Thin Films by ALD

Electrochemical and Solid-State Letters, 12, 7, F85-F88 (2004)

20

Jaehoo Park, Moonju Cho, Hong Bae Park, Tae Joo Park, Suk Woo Lee, Sug Hun Hong, Doo Seok Jeong, Chihoon Lee, and Cheol Seong Hwang

Voltage induced degradation in self-aligned polycrystalline-Si gate n-type field effect transistors with HfO2 gate dielectrics

Applied Physics Letters, 24, 85, 5965-5967 (2004)

19

Moonju Cho, Doo Seok Jeong, Jaehoo Park, Hong Bae Park, Suk Woo Lee, Tae Joo Park, Cheol Seong Hwang, Gi Hoon Jang and Jaehack Jeong

Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor

Applied Physics Letters, 24, 85, 5953-5955 (2004)

18

Woo Young Park and Cheol Seong Hwang

Film thickness dependent Curie-Weiss behaviors of (Ba,Sr)TiO3 thin film capacitors having Pt electrodes

Applied Physics Letters, 22, 85, 5313-5315 (2004)

17

Kyung-Min Kim, Byung Joon Choi, Seong Keun Kim, and Cheol Seong Hwang

Fabrication of metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

Applied Physics Letters, 22, 85, 5412-5417 (2004) Also in Virtual Journal of Nanoscale Science & Technology, 24, 10 (2004)

16

Seong Keun Kim, Kyung Min Kim, Wan don Kim, Cheol Seong Hwang

High dielectric constant TiO2 thin films on Ru electrode grown at 250oC by atomic-layer-deposition

Applied Physics Letters, 18, 85, 4112-4114 (2004)

15

Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Tae Joo Park and Cheol Seong Hwang

Improvements in reliability and leakage current properties of HfO2 gate dielectric films by in situ O3 oxidation of Si substrate

Electrochemical and Solid-State Letters, 11, 7, G254-G257 (2004)

14

S. Kim, C. S. Hwang, H. J. Kim, J. Y. Kim, K. Lee, H. J. Lim, C. Y. Yoo, and S. T. Kim

Investigation of Ru/TiN bottom electrodes prepared by chemical vapor deposition

Japanese Journal of Applied Physcis, Part 1. Number 9B, 43, 6635-6639 (2004)

13

Seong Keun Kim and Cheol Seong Hwang

Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in-situ O3 oxidation

Journal of Applied Physics, 4, 96, 2323-2329 (2004)

12

Jae Kyeong Jeong, Ho Kuen Song, Myung Yoon Um, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim , Euijoon Yoon, Cheol Seong Hwang, and Hyeong Joon Kim

Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition

Materials Science Forum, 457-460, 1597-1600 (2004)

11

Chihoon Lee, Jihoon Choi, Moonju Cho, Jahoo Park, Cheol Seong Hwang, Hyeong Joon Kim, and Jaehack Jeong

Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si(100) substrate

Journal of Vacuum Science & Technology B, 4, 22, 1838-1843 (2004)

10

Dail Eom, In Sang Jeon, Sang Yong No, Cheol Seong Hwang, and Hyeong Joon Kim

Changes in structures and electrical conduction mechanisms of chemical vapor deposited Ta2O5 thin films by annealing under O3 atmosphere with ultraviolet light radiation

Journal of Materials Research, 05, 19, 1516-1523 (2004)

9

Chihoon Lee, Jihoon Choi, Moonju Cho, Doo Seok Jeong, Cheol Seong Hwang, and Hyeong Joon Kim

Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

Applied Physics Letters, 15, 84, 2868-2870 (2004)

8

Jae Kyeong Jeong, Jung-Hae Choi, Cheol Seong Hwang, Hyeong Joon Kim, Jae-Hoon Lee, Jung-Hee Lee, and Chang-Soo Kim

Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate

Applied Physics Letters, 14, 84, 2575-2577 (2004)

7

Jin Shi Zhao, Dong-Yeon Park, Moo Jin Seo, Cheol Seong Hwang, Young Ki Han, Cheol Hoon Yang, and Ki Young Oh

Metallorganic CVD of High-Quality PZT Thin Films at Low Temperature with New Zr and Ti Precursors Having MMP Ligands

Journal of The Electrochemical Society, 5, 151, C283-C291 (2004)

6

Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang and Jaehack Jeong

Optimized Nitridation of Al2O3 Interlayers for Atomic-Layer-Deposited HfO2 Gate Dielectric Films

Electrochemical and Solid-State Letters, 4, 7, F25-F29 (2004)

5

Ji-Eun Lim, Jae Kyeong Jeong, Kun Ho Ahn, Hyeong Joon Kim, Cheol Seong Hwang, Dong-Yeon Park, and Dong-Su Lee

Microstructural characterization of sputter-deposited Pt thin film electrode

Journal of Materials Research, 02, 19, 460-468 (2004)

4

Jong-Cheol Lee, S.-J. Oh, Moonju Cho, Cheol Seong Hwang, and Ranju Jung

Chemical structure of the interface in ultrathin HfO2/Si films

Applied Physics Letters, 8, 84, 1305-1307 (2004)

3

Jae Kyeong Jeong, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, and Hyeong Joon Kim

Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate

Electrochemical and Solid-State Letters, 4, 7, C43-C45 (2004)