| 22 |
Chihoon Lee, Cheol Seong Hwang, and Hyeong Joon Kim Comparison of the Electrical Properties of High-k Gate Dielectric (HfO2 and Al2O3) Films with Pt or n+-Oolycrystalline-Silicon Gate Integrated Ferroelectrics, 1, 67, 49-57 (2004)
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| 21 |
Yo-Sep Min, Young Jin Cho and Cheol Seong Hwang Amorphous High k Dielectric Bi1-x-yTixSiyOz Thin Films by ALD Electrochemical and Solid-State Letters, 12, 7, F85-F88 (2004)
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| 20 |
Jaehoo Park, Moonju Cho, Hong Bae Park, Tae Joo Park, Suk Woo Lee, Sug Hun Hong, Doo Seok Jeong, Chihoon Lee, and Cheol Seong Hwang Voltage induced degradation in self-aligned polycrystalline-Si gate n-type field effect transistors with HfO2 gate dielectrics Applied Physics Letters, 24, 85, 5965-5967 (2004)
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| 19 |
Moonju Cho, Doo Seok Jeong, Jaehoo Park, Hong Bae Park, Suk Woo Lee, Tae Joo Park, Cheol Seong Hwang, Gi Hoon Jang and Jaehack Jeong Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor Applied Physics Letters, 24, 85, 5953-5955 (2004)
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| 18 |
Woo Young Park and Cheol Seong Hwang Film thickness dependent Curie-Weiss behaviors of (Ba,Sr)TiO3 thin film capacitors having Pt electrodes Applied Physics Letters, 22, 85, 5313-5315 (2004)
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| 17 |
Kyung-Min Kim, Byung Joon Choi, Seong Keun Kim, and Cheol Seong Hwang Fabrication of metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators Applied Physics Letters, 22, 85, 5412-5417 (2004) Also in Virtual Journal of Nanoscale Science & Technology, 24, 10 (2004) |
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| 16 |
Seong Keun Kim, Kyung Min Kim, Wan don Kim, Cheol Seong Hwang High dielectric constant TiO2 thin films on Ru electrode grown at 250oC by atomic-layer-deposition Applied Physics Letters, 18, 85, 4112-4114 (2004)
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| 15 |
Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Tae Joo Park and Cheol Seong Hwang Improvements in reliability and leakage current properties of HfO2 gate dielectric films by in situ O3 oxidation of Si substrate Electrochemical and Solid-State Letters, 11, 7, G254-G257 (2004)
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| 14 |
S. Kim, C. S. Hwang, H. J. Kim, J. Y. Kim, K. Lee, H. J. Lim, C. Y. Yoo, and S. T. Kim Investigation of Ru/TiN bottom electrodes prepared by chemical vapor deposition Japanese Journal of Applied Physcis, Part 1. Number 9B, 43, 6635-6639 (2004)
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| 13 |
Seong Keun Kim and Cheol Seong Hwang Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in-situ O3 oxidation Journal of Applied Physics, 4, 96, 2323-2329 (2004)
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| 12 |
Jae Kyeong Jeong, Ho Kuen Song, Myung Yoon Um, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim , Euijoon Yoon, Cheol Seong Hwang, and Hyeong Joon Kim Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition Materials Science Forum, 457-460, 1597-1600 (2004)
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| 11 |
Chihoon Lee, Jihoon Choi, Moonju Cho, Jahoo Park, Cheol Seong Hwang, Hyeong Joon Kim, and Jaehack Jeong Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si(100) substrate Journal of Vacuum Science & Technology B, 4, 22, 1838-1843 (2004)
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| 10 |
Dail Eom, In Sang Jeon, Sang Yong No, Cheol Seong Hwang, and Hyeong Joon Kim Changes in structures and electrical conduction mechanisms of chemical vapor deposited Ta2O5 thin films by annealing under O3 atmosphere with ultraviolet light radiation Journal of Materials Research, 05, 19, 1516-1523 (2004)
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| 9 |
Chihoon Lee, Jihoon Choi, Moonju Cho, Doo Seok Jeong, Cheol Seong Hwang, and Hyeong Joon Kim Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films Applied Physics Letters, 15, 84, 2868-2870 (2004)
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| 8 |
Jae Kyeong Jeong, Jung-Hae Choi, Cheol Seong Hwang, Hyeong Joon Kim, Jae-Hoon Lee, Jung-Hee Lee, and Chang-Soo Kim Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate Applied Physics Letters, 14, 84, 2575-2577 (2004)
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| 7 |
Jin Shi Zhao, Dong-Yeon Park, Moo Jin Seo, Cheol Seong Hwang, Young Ki Han, Cheol Hoon Yang, and Ki Young Oh Metallorganic CVD of High-Quality PZT Thin Films at Low Temperature with New Zr and Ti Precursors Having MMP Ligands Journal of The Electrochemical Society, 5, 151, C283-C291 (2004)
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| 6 |
Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang and Jaehack Jeong Optimized Nitridation of Al2O3 Interlayers for Atomic-Layer-Deposited HfO2 Gate Dielectric Films Electrochemical and Solid-State Letters, 4, 7, F25-F29 (2004)
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| 5 |
Ji-Eun Lim, Jae Kyeong Jeong, Kun Ho Ahn, Hyeong Joon Kim, Cheol Seong Hwang, Dong-Yeon Park, and Dong-Su Lee Microstructural characterization of sputter-deposited Pt thin film electrode Journal of Materials Research, 02, 19, 460-468 (2004)
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| 4 |
Jong-Cheol Lee, S.-J. Oh, Moonju Cho, Cheol Seong Hwang, and Ranju Jung Chemical structure of the interface in ultrathin HfO2/Si films Applied Physics Letters, 8, 84, 1305-1307 (2004)
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| 3 |
Jae Kyeong Jeong, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, and Hyeong Joon Kim Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate Electrochemical and Solid-State Letters, 4, 7, C43-C45 (2004)
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