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Total Papers : 656          Total Conferences : 938

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Yu Jin Kim, Min Hyuk Park, Woojin Jeon, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang

Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer

Journal of Applied Physics, 22, 118, 224105 (2015)


Hyun Soo Jin, Young Jin Cho, Tae Jun Seok, Dae Hyun Kim, Dae Woong Kim, Sang-Moon Lee, Jong-Bong Park, Dong-Jin Yun, Seong Keun Kim, Cheol Seong Hwang*, Tae Joo Park*

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

Applied Surface Science, 357, 2306-2312 (2015)


Shusuke Kasamatsu, Satoshi Watanabe, Cheol Seong Hwang, and Seungwu Han

Emergence of Negative Capacitance in Multidomain Ferroelectric–Paraelectric Nanocapacitors at Finite Bias

Advanced Materials, 2, 28, 335-340 (2015)


Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun and Cheol Seong Hwang

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

Applied Physics Letters, 19, 107, 192907 (2015)


Tae Hyung Park, Seul Ji Song,, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28nm-diameter memory cell

Scientific Reports, 5, 15965 (2015)


An Quan Jiang, Xiang Jian Meng, David Wei Zhang, Min Hyuk Park, Sijung Yoo, Yu Jin Kim, James F. Scott, and Cheol Seong Hwang

Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong

Scientific Reports, 5, 14618 (2015)


Li Wei Zhou, Xing Long Shao, Xiang Yuan Li, Hao Jiang, Ran Chen, Kyung Jean Yoon, Hae Jin Kim, Kailiang Zhang, Jinshi Zhao, and Cheol Seong Hwang

Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure

Applied Physics Letters, 7, 107, 072901 (2015)


Jung Ho Yoon, Kyung Min Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park, Young Jae Kwon, Xinglong Shao, and Cheol Seong Hwang

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Advanced Materials, 25, 27, 3811-3816 (2015)


Woongkyu Lee, Sijung Yoo, Woojin Jeon, Yeon Woo Yoo, Cheol Hyun An, Min Jung Chung, Han Joon Kim, SangWoon Lee, and Cheol Seong Hwang

Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer

Thin Solid Films, 589, 723-729 (2015)


Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, Sang Hyun Kim,  Cheol Jin Cho, Seong Keun Kim, and Cheol Seong Hwang

Asymmetry in electrical properties  of Al-doped TiO2 film with respect  to bias voltage

Physica Status Solidi R.R.L., 7, 9, 410-413 (2015)


Donghee Son, Jongha Lee, Dong Jun Lee, Roozbeh Ghaffari, Sumin Yun, Seok Joo Kim, Ji Eun Lee, Hye Rim Cho, Soonho Yoon, Shixuan Yang, Cheol Seong Hwang, Sangwook Nam, Nanshu Lu, Taeghwan Hyeon, Seung Hong Choi, and Dae-Hyeong Kim

Bioresorbable Electronic Stent Integrated with Therapeutic Nanoparticles for Endovascular Diseases

ACS Nano, 6, 9, 5937-5946 (2015)


Kanghoon Yim, Youn Yong, Joohee Lee, Kyuhyun Lee, Ho-Hyun Nahm, Jiho Yoo, Chanhee Lee, Cheol Seong Hwang and Seungwu Han

Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

NPG Asia Materials, 7 (2015)


Xing Long Shao, Li Wei Zhou, Kyung Jean Yoon, Hao Jiang, Jin Shi Zhao, Kai Liang Zhang, Sijung Yoo, and Cheol Seong Hwang

Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

Nanoscale, 7, 11063-11074 (2015)


Jong Hoon Park, Jangwon Seo, Sangman Park, Seong Sik Shin, Young Chan Kim, Nam Joong Jeon, Hee-Won Shin, Tae Kyu Ahn, Jun Hong Noh, Sung Cheol Yoon, Cheol Seong Hwang, and Sang Il Seok

Efficient CH3 NH3 PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition

Advanced Materials, 27, 27, 4013-4019 (2015)


Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun and Cheol Seong Hwang

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

Journal of Materials and Chemistry C, 3, 6291-6300 (2015)


Hyungkwang Lim, Vladimir Kornijcuk, Jun Yeong Seok, Seong Keun Kim, Inho Kim, Cheol Seong Hwang, and Doo Seok Jeong

Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study

Scientific Reports, 5, 9776 (2015)


Woongkyu Lee, Woojin Jeon, Cheol Hyun An, Min Jung Chung, Han Joon Kim, Taeyong Eom, Sheby Mary George, Bo Keun Park, Jeong Hwan Han, Chang Gyoun Kim, Taek-Mo Chung, Sang Woon Lee, and Cheol Seong Hwang

Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor

Chemistry of Materials, 11, 27, 3881-3891 (2015)


Cheol Seong Hwang

Prospective of Semiconductor Memory Devices: from Memory System to Materials

Advanced Electronic Materials, 6, 1, 1400056 (2015)


Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang

Thickness-dependent electroforming  behavior of ultra-thin Ta2O5 resistance  switching layer

Physica Status Solidi R.R.L., 6, 9, 362-365 (2015)


Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo-Sung Kim, Iain Buchanan, Sergei Ivanov, Manchao Xiao, and Cheol Seong Hwang

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application

Chemistry of Materials, 10, 27, 3707-3713 (2015)