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Total Papers : 676          Total Conferences : 969

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Xiang yuan li, Tae Hyung Park, Seung Dam Hyun, and Cheol Seong Hwang*

Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer

ACS Appl. Electron. Mater., 2022, 4, 5351−5360


Chanyoung Yoo, Jeong Woo Jeon, Seungjae Yoon, Yan Cheng, Gyuseung Han, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Woohyun Kim, Yonghui Zheng, Jongho Lee, Junku Ahn, Sunglae Cho, Scott B. Clendenning, Ilya V. Karpov, Yoon Kyung Lee, Jung-Hae Choi, and Cheol Seong Hwang*

Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

Advanced Materials, 2207143 (2022)


Kyung Seok Woo, Jaehyun Kim, Janguk Han, Woohyun Kim, Yoon Ho Jang & Cheol Seong Hwang

Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors

Nature Communications, 13, 5762 (2022)


Hyo Cheon Woo, Jihun Kim, Sunwoo Lee, Hae Jin Kim, and Cheol Seong Hwang*

Stacked One-Selector-One-Resistive Memory Crossbar Array With High Nonlinearity and On-Current Density for the Neuromorphic Applications

Adv. Electron. Mater. 2022, 2200656


Seung Kyu Ryoo, Kyung Do Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Yoon Ho Jang, Min Hyuk Park, and Cheol Seong Hwang*

Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm

Adv. Electron. Mater., 2200726 (2022)

Juseong Park, Jungwoo Choi, Gwangmin Kim, Geunyoung Kim, Gil Seop Kim, Hanchan Song, Yeong Seok Kim, Younghyun Lee, Hakseung Rhee, Hyuck Mo Lee, Cheol Seong Hwangand Kyung Min Kim*
Modified Dynamic Physical Model of Valence Change Mechanism Memristors
ACS Appl. Mater. Interfaces (2022)
Gyuseung Han, In Won Yeu, Kun Hee Ye, Seungjae Yoon, Taeyoung Jeong, Seung-Cheol Lee, Cheol Seong Hwang and Jung-Hae Choi*
Temperature-dependent bandgap of (In,Ga)As via P5Grand: A Python Package for Property Prediction of Pseudobinary systems using Grand canonical ensemble
Chemical Physics Letters, 804, 139887 (2022) 

Yong Bin Lee, Beom Yong Kim, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Min Hyuk Park, Cheol Seong Hwang*

Oxygen-Scavenging Effects of Added Ti Layer in the TiN Gate of Metal-Ferroelectric-Insulator-Semiconductor Capacitor with Al-doped HfO2 Ferroelectric Film

Advanced Electronic Materials, 2200310 (2022)


Seung Soo Kim, Soo Kyeom Yong, Whayoung Kim, Sukin Kang, Hyeon Woo Park, Kyung Jean Yoon, Dong Sun Sheen, Seho Lee, and Cheol Seong Hwang*

Review of Semiconductor Flash Memory Devices for Material and Process Issues

Advanced Materials, 2200659 (2022)



Dae Seon Kwon, Tae Kyun Kim, Junil Lim, Haengha Seo, Heewon Paik, and Cheol Seong Hwang*

Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer

ACS Applied Electronic Materials, 4, 4, 2005-2014 (2022)


Bo Wen Wang, Seungsoo Kim, Haewon Song, Haengha Seo, Xiangyuan Li, Jin Myung Choi, Jinwoo Choi, Jonghoon Shin and Cheol Seong Hwang

Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition

J. Mater. Chem. C, 2022, Advance Article (2022)

DOI: 10.1039/d2tc00595f


Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung-Hae Choi and Cheol Seong Hwang

The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors

Advanced Electronic Materials, 8, 7 (2022)


Woon Hyung Cheong, Jae Bum Jeon, Jae Hyun In, Geunyoung Kim, Hanchan Song, Janho An, Juseong Park, Young Seok Kim, Cheol Seong Hwang,* and Kyung Min Kim*

Demonstration of Neuromodulation-inspired Stashing System for Energy-efficient Learning of Spiking Neural Network using a Self-Rectifying Memristor Array

Adv. Funct. Mater. 2022, 2200337


Uwe Schroeder, Min Hyuk Park, Thomas Mikolajick & Cheol Seong Hwang

The fundamentals and applications of ferroelectric HfO2

Nature Review Materials, doi: 10.1038/s41578-022-00431-2 (2022)


Gyuseung Han, In Won Yeu, Kun Hee Ye, Cheol Seong Hwang, and Jung-Hae Choi*

Atomistic prediction on the composition- and configuration-dependent

bandgap of Ga(As,Sb) using cluster expansion and ab initio thermodynamics 

Materials Science and Engineering B, 280 115713 (2022)

Taegyun Park, Yeong Rok Kim, Jihun Kim, Jinwon Lee, and Cheol Seong Hwang*

Reliable Domain-Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors

Advanced Intelligent Systems, 2100267 (2022)


Jihun Kim, Hyo Cheon Woo, Sunwoo Lee, Byeol Jun Lee, Taegyun Park, and Cheol Seong Hwang*

Training method for accurate Off-Chip training of one-selector-one-resistor crossbar array with nonlinearity and wire resistance

Advanced Intelligent Systems, 2100256 (2022)


Young Geun Song, In-Hwan Baek, Jae-Gyun Yim, Taeyong Eom, Teak-Mo Chung, Chul-Ho Lee, Cheol Seong Hwang, Chong-Yun Kang*, and Seong Keun Kim*

Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature

Journal of Materials Chemistry A, DOI: 10.1039/d1ta11014d

Hyeon Woo Park, Minsik Oh, and Cheol Seong Hwang*

Negative Capacitance from the Inhomogenous Stray Field

in a Ferroelectric–Dielectric Structure

Adv. Funct. Mater. 2022, 2200389


Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang* and Hangbing Lyu*

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Nature Communications volume 13, Article number: 645 (2022)