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Total Papers : 669          Total Conferences : 969

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24

Jeong Woo Jeon, Chanyoung Yoo, Woohyun Kim, Wonho Choi, Byongwoo Park, Yoon Kyeung Lee* and Cheol Seong Hwang*

Atomic layer deposition of SnSex thin films using

Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 coinjection

Dalton Trans., 2022, 51, 594-601

23

Jihun Kim, Hyo Cheon Woo, Taeyoung Jeong, Jung-Hae Choi, and and Cheol Seong Hwang

In-Depth Analysis of One Selector–One Resistor Crossbar Array for Its Writing and Reading Operations for Hardware Neural Network with Finite Wire Resistance

Advanced Intelligent Systems, 2100174 (2021)

22

In Hwan Baek, Ah Jin Cho, Ga Yeon Lee, Heenang Choi, Sung Ok Won, Taeyong Eom, Taek Mo Chung, Cheol Seong Hwang and Seong Keun Kim*

Engancement of electrical performance of atomic layer deposited SnO films via substrate surface engineering

Journal of Materials Chemistry C, 2021, 9, 12314-12321

21

Bo Wen Wang, Jinwoo Choi, Hyoung Gyun Kim, Seung Dam Hyun, Chanyoung Yoo, Seungsoo Kim, Hoin Lee and Cheol Seong Hwang*

Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis(cyclopentadienyl)magnesium precursor

Journal of Materials Chemistry C2021, 9, 15359-15374

20

Yoon Ho Jang, Woohyun Kim, Jihun Kim, Kyung Seok Woo, Hyun Jae Lee, Jeong Woo Jeon, Sung Keun Shim, Janguk Han, and Cheol Seong Hwang*

Time-varying data processing with nonvolatile memristor-based temporal kernel

Nature Communications, 12, 5727 (2021)

19
Beom Yong Kim, Se Hyun Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Min Hyuk Park*, Cheol Seong Hwang*
Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer
Appl. Phys. Lett. 119, 122902 (2021)
18

Yu Yan, Jia Cheng Li, Yu Ting Chen, Xiang Yu Wang, Gang Ri Cai, Hyeon Woo Park, Ji Hun Kim, Jin Shi Zhao,* and Cheol Seong Hwang*

Area-Type Electronic Bipolar Switching Al/TiO1.7/TiO2/Al Memory with Linear Potentiation and Depression Characteristics

ACS Applied Materials & Interface (2021)


17

Nuo Xu, Taegyun Park, Kyung Jean Yoon*, Cheol Seong Hwang*

In-Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application

Physica Status Solidi RRL, 2100208 (2021)

16

In Won Yeu, Gyuseung Han, Kun Hee Ye, Cheol Seong Hwang, Jung-Hae Choi

InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework

Computer Physics Communications, 268, 108089 (2021)


15

Kyung Seok Woo, Jaehyun Kim, Janguk Han, Jin Myung Choi, Woohyun Kim, and Cheol Seong Hwang*

A High-Speed True Random Number Generator Based on a CuxTe1-x Diffusive Memristor

Advanced Intelligent Systems, 2100062 (2021)

14

Hae Jin Kim, Jihun Kim, Tae Gyun Park, Jung Ho Yoon*, and Cheol Seong Hwang*

Multi-Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu-Cone Structure Embedded Conductive Bridge Random Access Memory

Advanced Electronic Materials, 2100209 (2021)

13

Hyun Jae Lee, Taehwan Moon, Sukin Kang, Woohyun Kim, and Cheol Seong Hwang*

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films

ACS Applied Electronic Materials, Article ASAP,

DOI: 10.1021/acsaelm.1c00410

12

Dae Seon Kwon, Woojin Jeon, Dong Gun Kim, Tae Kyun Kim, Haengha Seo, Junil Lim, and Cheol Seong Hwang*

Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method

ACS Applied Materials & Interfaces, 13, 23915-23927 (2021)

11
Beom Yong Kim, Hyeon Woo Park, Seung Dam Hyun, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Deok-Yong Cho, Min Hyuk Park*, and Cheol Seong Hwang*
Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer
Adv. Electron. Mater. 2021, 2100042
10

Yoon Kyeung Lee, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon and Cheol Seong Hwang*

Atomic layer deposition of chalcogenides for next-generation phase change memory

J. Mater. Chem. C, 9, 3708 - 3725 (2021)

9

Dohun Kim, Guhyun Kim, Cheol Seong Hwang, Doo Seok Jeong*

eWB: Event-based weight binarization algorithm for spiking neural networks

IEEE Access (2021)

8

Kun Hee Ye, Gyuseung Han, In Won Yeu, Cheol Seong Hwang,* and Jung-Hae Choi*

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite-Structure (AlN)n/(ScN)m Superlattice

Phys. Status Solidi (RRL)-Rapid Research Letters2100009 (2021)

7

Dong Gun Kim, Hae-Ryoung Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Heewon Paik, Woongkyu Lee and Cheol Seong Hwang

Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate

J. Phys. D: Appl. Phys., 54, 185110 (2021)

6

Hyeon Woo Park, Seung Dam Hyun, In Soo Lee, Suk Hyun Lee, Yong Bin Lee, Minsik Oh, Beom Yong Kim, Seung Gyu Ryoo, and Cheol Seong Hwang*

Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric-dielectric bilayer

Nanoscale, 2021, 13, 2556-2572

5

Gyuseung Han, In Won Yeu, Kun Hee Ye, Seung-Cheol Lee, Cheol Seong Hwang* and Jung-Hae Choi*

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

Journal of Materials Chemistry C, 9, 851-859 (2021)