| 24 |
Jeong Woo Jeon, Chanyoung Yoo, Woohyun Kim, Wonho Choi, Byongwoo Park, Yoon Kyeung Lee* and Cheol Seong Hwang* Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 coinjection Dalton Trans., 2022, 51, 594-601 |
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| 23 |
Jihun Kim, Hyo Cheon Woo, Taeyoung Jeong, Jung-Hae Choi, and and Cheol Seong Hwang In-Depth Analysis of One Selector–One Resistor Crossbar Array for Its Writing and Reading Operations for Hardware Neural Network with Finite Wire Resistance Advanced Intelligent Systems, 2100174 (2021) |
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| 22 |
In Hwan Baek, Ah Jin Cho, Ga Yeon Lee, Heenang Choi, Sung Ok Won, Taeyong Eom, Taek Mo Chung, Cheol Seong Hwang and Seong Keun Kim* Engancement of electrical performance of atomic layer deposited SnO films via substrate surface engineering Journal of Materials Chemistry C, 2021, 9, 12314-12321 |
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| 21 |
Bo Wen Wang, Jinwoo Choi, Hyoung Gyun Kim, Seung Dam Hyun, Chanyoung Yoo, Seungsoo Kim, Hoin Lee and Cheol Seong Hwang* Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis(cyclopentadienyl)magnesium precursor Journal of Materials Chemistry C, 2021, 9, 15359-15374 |
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| 20 |
Yoon Ho Jang, Woohyun Kim, Jihun Kim, Kyung Seok Woo, Hyun Jae Lee, Jeong Woo Jeon, Sung Keun Shim, Janguk Han, and Cheol Seong Hwang* Time-varying data processing with nonvolatile memristor-based temporal kernel Nature Communications, 12, 5727 (2021) |
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| 19 |
Beom Yong Kim, Se Hyun Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Min Hyuk Park*, Cheol Seong Hwang* Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer Appl. Phys. Lett. 119, 122902 (2021) |
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| 18 |
Yu Yan, Jia Cheng Li, Yu Ting Chen, Xiang Yu Wang, Gang Ri Cai, Hyeon Woo Park, Ji Hun Kim, Jin Shi Zhao,* and Cheol Seong Hwang* Area-Type Electronic Bipolar Switching Al/TiO1.7/TiO2/Al Memory with Linear Potentiation and Depression Characteristics ACS Applied Materials & Interface （2021）
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| 17 |
Nuo Xu‡, Taegyun Park‡, Kyung Jean Yoon*, Cheol Seong Hwang* In-Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application Physica Status Solidi RRL, 2100208 (2021) |
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| 16 |
In Won Yeu, Gyuseung Han, Kun Hee Ye, Cheol Seong Hwang, Jung-Hae Choi InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework Computer Physics Communications, 268, 108089 (2021)
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| 15 |
Kyung Seok Woo, Jaehyun Kim, Janguk Han, Jin Myung Choi, Woohyun Kim, and Cheol Seong Hwang* A High-Speed True Random Number Generator Based on a CuxTe1-x Diffusive Memristor Advanced Intelligent Systems, 2100062 (2021) |
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| 14 |
Hae Jin Kim, Jihun Kim, Tae Gyun Park, Jung Ho Yoon*, and Cheol Seong Hwang* Multi-Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu-Cone Structure Embedded Conductive Bridge Random Access Memory Advanced Electronic Materials, 2100209 (2021) |
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| 13 |
Hyun Jae Lee, Taehwan Moon, Sukin Kang, Woohyun Kim, and Cheol Seong Hwang* Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films ACS Applied Electronic Materials, Article ASAP, DOI: 10.1021/acsaelm.1c00410 |
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| 12 |
Dae Seon Kwon, Woojin Jeon, Dong Gun Kim, Tae Kyun Kim, Haengha Seo, Junil Lim, and Cheol Seong Hwang* Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method ACS Applied Materials & Interfaces, 13, 23915-23927 (2021) |
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| 11 |
Beom Yong Kim, Hyeon Woo Park, Seung Dam Hyun, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Deok-Yong Cho, Min Hyuk Park*, and Cheol Seong Hwang* Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer Adv. Electron. Mater. 2021, 2100042 |
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| 10 |
Yoon Kyeung Lee, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon and Cheol Seong Hwang* Atomic layer deposition of chalcogenides for next-generation phase change memory J. Mater. Chem. C, 9, 3708 - 3725 (2021) |
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| 9 |
Dohun Kim, Guhyun Kim, Cheol Seong Hwang, Doo Seok Jeong* eWB: Event-based weight binarization algorithm for spiking neural networks IEEE Access (2021) |
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| 8 |
Kun Hee Ye, Gyuseung Han, In Won Yeu, Cheol Seong Hwang,* and Jung-Hae Choi* Atomistic Understanding of the Ferroelectric Properties of a Wurtzite-Structure (AlN)n/(ScN)m Superlattice Phys. Status Solidi (RRL)-Rapid Research Letters, 2100009 (2021) |
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| 7 |
Dong Gun Kim, Hae-Ryoung Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Heewon Paik, Woongkyu Lee and Cheol Seong Hwang Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate J. Phys. D: Appl. Phys., 54, 185110 (2021) |
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| 6 |
Hyeon Woo Park, Seung Dam Hyun, In Soo Lee, Suk Hyun Lee, Yong Bin Lee, Minsik Oh, Beom Yong Kim, Seung Gyu Ryoo, and Cheol Seong Hwang* Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric-dielectric bilayer Nanoscale, 2021, 13, 2556-2572 |
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| 5 |
Gyuseung Han, In Won Yeu, Kun Hee Ye, Seung-Cheol Lee, Cheol Seong Hwang* and Jung-Hae Choi* Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer Journal of Materials Chemistry C, 9, 851-859 (2021) |
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