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Total Papers : 650          Total Conferences : 938

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In Won Yeu, Gyuseung Han, Kun Hee Ye, Cheol Seong Hwang, Jung-Hae Choi

InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework

Computer Physics Communications, 268, 108089 (2021)


Kyung Seok Woo, Jaehyun Kim, Janguk Han, Jin Myung Choi, Woohyun Kim, and Cheol Seong Hwang*

A High-Speed True Random Number Generator Based on a CuxTe1-x Diffusive Memristor

Advanced Intelligent Systems, 2100062 (2021)


Hae Jin Kim, Jihun Kim, Tae Gyun Park, Jung Ho Yoon*, and Cheol Seong Hwang*

Multi-Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu-Cone Structure Embedded Conductive Bridge Random Access Memory

Advanced Electronic Materials, 2100209 (2021)


Hyun Jae Lee, Taehwan Moon, Sukin Kang, Woohyun Kim, and Cheol Seong Hwang*

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films

ACS Applied Electronic Materials, Article ASAP,

DOI: 10.1021/acsaelm.1c00410


Dae Seon Kwon, Woojin Jeon, Dong Gun Kim, Tae Kyun Kim, Haengha Seo, Junil Lim, and Cheol Seong Hwang*

Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method

ACS Applied Materials & Interfaces, 13, 23915-23927 (2021)

Beom Yong Kim, Hyeon Woo Park, Seung Dam Hyun, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Deok-Yong Cho, Min Hyuk Park*, and Cheol Seong Hwang*
Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer
Adv. Electron. Mater. 2021, 2100042

Yoon Kyeung Lee, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon and Cheol Seong Hwang*

Atomic layer deposition of chalcogenides for next-generation phase change memory

J. Mater. Chem. C, 9, 3708 - 3725 (2021)


Dohun Kim, Guhyun Kim, Cheol Seong Hwang, Doo Seok Jeong*

eWB: Event-based weight binarization algorithm for spiking neural networks

IEEE Access (2021)


Kun Hee Ye, Gyuseung Han, In Won Yeu, Cheol Seong Hwang,* and Jung-Hae Choi*

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite-Structure (AlN)n/(ScN)m Superlattice

Phys. Status Solidi (RRL)-Rapid Research Letters2100009 (2021)


Dong Gun Kim, Hae-Ryoung Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Heewon Paik, Woongkyu Lee and Cheol Seong Hwang

Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate

J. Phys. D: Appl. Phys., 54, 185110 (2021)


Hyeon Woo Park, Seung Dam Hyun, In Soo Lee, Suk Hyun Lee, Yong Bin Lee, Minsik Oh, Beom Yong Kim, Seung Gyu Ryoo, and Cheol Seong Hwang*

Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric-dielectric bilayer

Nanoscale, 2021, 13, 2556-2572


Gyuseung Han, In Won Yeu, Kun Hee Ye, Seung-Cheol Lee, Cheol Seong Hwang* and Jung-Hae Choi*

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

Journal of Materials Chemistry C, 9, 851-859 (2021)


Jun Shik Kim, Sukin Kang, Younjin Jang, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Woongkyu Lee, and Cheol Seong Hwang

Investigating the Reasons for the Difficult Erase Operation of a Charge-Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin-Film Channel Layers

physica status solidi (RRL)–Rapid Research Letters, DOI: 10.1002/pssr.202000549


Hyeon Woo Park, Jae-Gil Lee, and Cheol Seong Hwang*

Review of ferroelectric field-effect transistor for three-dimensional storage applications

Nano Select, (2021), DOI:10.1002/nano.20200281.


Dong Gun Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Woongkyu Lee and Cheol Seong Hwang

Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates

Advanced Electronic Materials, 202000819 (2021)


Dong Gun Kim, Cheol Hyun An, Sanghyeon Kim, Dae Seon Kwon, Junil Lim, Woojin Jeon and Cheol Seong Hwang

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

Journal of Materials Chemistry C, 9, 1572-1583 (2021)