Yoon Ho Jang^†, Soo Hyung Lee^†, Janguk Han, Woohyun Kim, Sung Keun Shim, Sunwoo Cheong, Kyung Seok Woo, Joon-Kyu Han, and Cheol Seong Hwang*

Spatiotemporal Data Processing with Memristor Crossbar-Array-Based Graph Reservoir

Advanced Materials, 2309314, (2023), DOI: 10.1039/D3MH01584J

Sunjin Lee^†, Yonghee Lee^†, Sukin Kang, Sahngik Mun, Jinheon Choi, and Cheol Seong Hwang *

Thickness-Dependent Growth Behaviors of Sputtered Amorphous InGaZnO Films Depending on the Substrates and Sputtering Conditions

ACS Applied Electronic Materials, (2023), DOI: 10.1021/acsaelm.3c01190

Yoon Ho Jang^†, Joon-Kyu Han^†, Sangik Moon, Sung Keun Shim, Janguk Han, Sunwoo Cheong, Soo Hyung Lee and Cheol Seong Hwang *

A high-dimensional in-sensor reservoir computing system with optoelectronic memristors for high performance neuromorphic machine vision

Materials Horizons, (2023), DOI: 10.1039/D3MH01584J

Sunwoo Cheong†, Dong Hoon Shin†, Soo Hyung Lee, Yoon Ho Jang, Taegyun Park,
Janguk Han, Sung Keun Shim, Yeong Rok Kim, Joon-Kyu Han, Néstor Ghenzi,*
and Cheol Seong Hwang*

Parallel Density-Based Spatial Clustering with
Dual-Functional Memristive Crossbar Array

Advanced Functional Materials, 2309108, (2023)

Chanyoung Yoo†, Jeong Woo Jeon†, Byongwoo Park, Wonho Choi, Gwangsik Jeon, Sangmin Jeon, Sungjin Kim, and Cheol Seong Hwang*

A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory

ACS Applied Electronic Materials (2023)

Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seung Yong Byun, Jae Hoon Lee and Cheol Seong Hwang

Impact of operation voltage and NH₃ annealing on the fatigue characteristics of ferroelectric AlScN thin films grown by sputtering

Nanoscale, 15, 16390 - 16402 (2023)

Kun Hee Ye, In Won Yeu, Gyuseung Han, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, Cheol Seong Hwang*, and Jung-Hae Choi*

Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf_1-xZr_xO₂ by first principle calculations

Appl. Phys. Rev. 10, 031419 (2023)

José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones , Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder 

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

APL materials, 11, 8, 089901 (2023)

Chanyoung Yoo†, Wonho Choi†, Sangmin Jeon, Jeong Woo Jeon, Byongwoo Park, Gwangsik Jeon, In-Hwan Baek, and Cheol Seong Hwang*

Top-to-Bottom Local Epitaxial Growth of the Two-Dimensional Antimony Telluride Film by Atomic Layer Deposition Using Sacrificial Germanium Telluride

Chemistry of Materials, 35, 17, 7311-7321 (2023)

Hyeon Woo Park†, Seungyong Byun†, Kyung Do Kim, Seung Kyu Ryoo, In Soo Lee,Yong Bin Lee, Suk Hyun Lee, Hyun Woo Nam, Jae Hoon Lee, Jae Hee Song,Sung Jae Shin, and Cheol Seong Hwang*

Exploring the Physical Origin of the Negative CapacitanceEffect in a Metal–Ferroelectric–Metal–Dielectric Structure

Seungjae Yoon, Gyuseung Han, Kun Hee Ye, Taeyoung Jeong, Cheol Seong Hwang, and Jung-Hae Choi 

A first principles study of the in-plane strain effects on the dielectric constant of high-κ Be0.25Mg0.75O superlattice

Journal of Applied Physics, 134, 054102 (2023)

Junil Lim†, Kun Hee Ye†, Dae Seon Kwon, Haengha Seo, Tae Kyun Kim, Heewon Paik, Jonghoon Shin, Haewon Song, Yoon Ho Jang, Jung-Hae Choi*, and Cheol Seong Hwang*

Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution

ACS Appl. Electron. Mater. (2023)

Junil Lim, Dae Seon Kwon, Haengha Seo, Tae Kyun Kim, Heewon Paik, Jonghoon Shin, Haewon Song, Yoon Ho Jang, Yu-kyung Park, Keonuk Lee, Young Sin Kim, Jung-Hae Choi*, and Cheol Seong Hwang*

Improving the Properties of SrRuO₃ Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO₂ Using Al₂O₃ Capping Layers

ACS Appl. Electron. Mater. (2023)

Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park*, and Cheol Seong Hwang*

Influences of the inhomogeneity of the ferroelectric thin films on switching current

MRS Communications, 13, 5 (2023)

Whayoung Kim†, Sukin Kang†, Yonghee Lee, Sahngik Mun, Jinheon Choi, Sunjin Lee and Cheol Seong Hwang

Electrical properties of amorphous Zn–Sn–O
thin films depending on composition and
post-deposition annealing temperature near
crystallization temperature 

Journal of Materials Chemistry C, 11, 8254-8262 (2023)

Beom Yong Kim^†, In Soo Lee^†, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, Seung Ryong Byun, Kyung Do Kim, Jae Hoon Lee, Deok Yong Cho, Min Hyuk Park, and Cheol Seong Hwang

Top Electrode Engineering for High-Performance Ferroelectric Hf_0.5Zr_0.5O₂ Capacitors

Wonho choi, Gilseop Kim, Hyun Young Kim, Chanyoung Yoo, Jeong Woo Jeon, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Sukin Kang, Yonghee Lee, and Cheol Seong Hwang*

Parallel integration of Nanoscale Atomic Layer Deposited Ge₂Sb₂Te₅ Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

ACS Applied Electronic Materials, 5, 1721-1729 (2023)

Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park* and Cheol Seong Hwang*

Evolution of the Ferroelectric Properties of AlScN Film by Electrical Cycling with an Inhomogeneous Field Distribution

Advanced Electronic Materials, 2201142, (2023)