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Total Papers : 628          Total Conferences : 902

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27

Seul Ji Song, Taehyung Park, Kyung Jean Yoon, Jung Ho Yoon, Dae Eun Kwon, Wontae  Noh, Clement Lansalot-Matras, Satoko Gatineau, Han-Koo Lee, Sanjeev Gautam, Deok-Yong Cho, Sang Woon Lee, and Cheol Seong Hwang

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

ACS Appl. Mater. Interfaces, Volume, DOI: 10.1021/acsami.6b11613 (2016)

26

Woo Chul Lee, Cheol Jin Cho, Jung-Hae Choi, Jin Dong Song, Cheol Seong Hwang and Seong Keun Kim

Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices 

Electron. Mater. Lett. DOI 10.1007/s13391-016-6226-7 (2016)

25

Woorham Bae, Kyung Jean Yoon, Cheol Seong Hwang,* Deog-Kyoon Jeong*

A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing

Nanotechnology, DOI:10.1088/0957-4484/27/48/485201 (2016)

24

Kyung Min Kim, Jiaming Zhang, Catherine Graves, J. Joshua Yang, Byung Joon Choi, Cheol Seong Hwang,* Zhiyong Li, and R. Stanley Williams*

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

Nano Letters, DOI: 10.1021/acs.nanolett.6b01781 (2016)

23

Taehong Gwon, Taeyong Eom, Sijung Yoo, Han-Koo Lee, Deok-Yong Cho, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Sergei Ivanov, and Cheol Seong Hwang

Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol

Chemistry of Materials, 28, 19, 7158-7166 (2016)

22

Kyung Jean Yoon, Woorham Bae, Deog-Kyoon Jeong, and Cheol Seong Hwang

Comprehensive writing margin analysis and its application to stacked on diode-one memory device for high density crossbar resistance switching random access memory

Advanced Electronic Materials, DOI: 10.1002/aelm.201600326 (2016)


21

Hyungkwang Lim, Rohit Soni, Dohun Kim, Guhyun Kim, Vladimir Kornijcuk, Inho Kim, Jong-Keuk Park, Cheol Seong Hwang and Doo Seok Jeong*

Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

Nanoscale, DOI: 10.1039/c6nr04072a (2016)

20

Xing Long Shao, Kyung Min Kim, Kyung Jean Yoon, Seul Ji Song, Jung Ho Yoon, Hae Jin Kim, Tae Hyung Park, Dae Eun Kwon, Young Jae Kwon, Yu Min Kim, Xi Wen Hu, Jin Shi Zhao, and Cheol Seong Hwang*

A Study of the Transition between the Non-polar and Bipolar Resistance Switching Mechanisms in the TiN/TiO2/Al Memory

Nanoscale, DOI: 10.1039/C6NR02800D (2016)


19

Doo Seok Jeong, Kyung Min Kim, Sungho Kim, Byung Joon Choi, and Cheol Seong Hwang

Memristors for Energy-Efficient New Computing Paradigms

Adv. Electron. Mater., DOI: 10.1002/aelm.201300090 (2016)

18

Jung Ho Yoon, Sijung Yoo, Seul Ji Song, Kyung Jean Yoon, Dae Eun Kwon, Young Jae Kwon, Tae Hyung Park, Hye Jin Kim, Xing Long Shao, Yumin Kim, and Cheol Seong Hwang*

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2−x Structure with a Sub-μm2 Cell Area

ACS Appl. Mater. Interfaces, DOI: 10.1021/acsami.6b05657 (2016)

17

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, and Cheol Seong Hwang

Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films

Adv. Mater.DOI: 10.1002/adma.201602787 (2016)

16

Keum Do Kim, Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Taehong Gwon, and Cheol Seong Hwang

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

Journal of Materials Chemistry C, 2016, 4, 6864-6872

15

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Multicolor Changeable Optical Coating by Adopting Multiple Layers of Ultrathin Phase Change Material Film

ACS Photonics, DOI : 10.1021/acsphotonics.6b00246 (2016)

14

Min Hyuk Park, Han Joon Kim, Yu Jin Kim. Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Franz Fengler, Uwe Schroeder, and Cheol Seong Hwang

Effect of Zr Content on the Wake-Up Effect in Hf1−xZrxO2 Films

ACS Applied Materials & Interfaces, 8 (24), 15466-15475 (2016)

13

Yu Jin Kim, Hiroyuki Yamada, Taehwan Moon, Young Jae Kwon, Cheol Hyun An, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Min Hyuk Park, and Cheol Seong Hwang

Time-Dependent Negative Capacitance Effects in Al2O3/BaTiOBilayers

Nano Letters, 16, 7, 4375-4381 (2016)

12

Yoonki Hong, Chang-Hee Kim, Jongmin Shin, Kyoung Yeon Kim, Jun Shik Kim, Cheol Seong Hwang and Jong-Ho Lee

Highly selective ZnO gas sensor based on MOSFET having a horizontal floating-gate

Sensors and Actuators B: Chemical, 232, 653-659 (2016)

11

Sungin Suh, Seung Wook Ryu*, Seongjae Cho, Jun-Rae Kim, Seongkyung Kim, Cheol Seong Hwang and Hyeong Joon Kim*

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Journal of Vacuum Science & Technology A, 34, 1, 01A136 (2016)

10

Jaehong Park, Joowhi Lee, Cheol Seong Hwang and Jung-Hae Choi

Atomic and electronic structures of a-ZnSnO3/a-SiO2 interface by ab initio molecular dynamics simulations

Physica Status Solidi B, 9, 253, 1765-1770 (2016)

9

Hyungkwang Lim, Hyung-Woo Ahn, Vladimir Kornijcuk, Guhyun Kim, Jun Yeong Seok, Inho Kim, Cheol Seong Hwang and Doo Seok Jeong

Relaxation oscillator-realized artificial electronic neurons, their responses, and noise

Nanoscale, 18, 9629-9640 (2016)


8

Susant K. Acharya, Raveendra Venkata Nallagatla, Octolia Togibasa, Bo W. Lee, Chunli Liu, Chang U. Jung, Bae Ho Park, Ji-Yong Park, Yunae Cho, Dong-Wook Kim, Janghyun Jo, Deok-Hwang Kwon, Miyoung Kim, Cheol Seong Hwang, and Seung C. Chae

Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory

ACS Applied Materials & Interfaces, 12, 8, 7902-7911 (2016)