| 27 |
Seul Ji Song, Taehyung Park, Kyung Jean Yoon, Jung Ho Yoon, Dae Eun Kwon, Wontae Noh, Clement Lansalot-Matras, Satoko Gatineau, Han-Koo Lee, Sanjeev Gautam, Deok-Yong Cho, Sang Woon Lee, and Cheol Seong Hwang Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O ACS Appl. Mater. Interfaces, Volume, DOI: 10.1021/acsami.6b11613 (2016) |
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| 26 |
Woo Chul Lee, Cheol Jin Cho, Jung-Hae Choi, Jin Dong Song, Cheol Seong Hwang and Seong Keun Kim Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices Electron. Mater. Lett. DOI 10.1007/s13391-016-6226-7 (2016) |
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| 25 |
Woorham Bae, Kyung Jean Yoon, Cheol Seong Hwang,* Deog-Kyoon Jeong* A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing Nanotechnology, DOI:10.1088/0957-4484/27/48/485201 (2016)
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| 24 |
Kyung Min Kim, Jiaming Zhang, Catherine Graves, J. Joshua Yang, Byung Joon Choi, Cheol Seong Hwang,* Zhiyong Li, and R. Stanley Williams* Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application Nano Letters, DOI: 10.1021/acs.nanolett.6b01781 (2016) |
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| 23 |
Taehong Gwon, Taeyong Eom, Sijung Yoo, Han-Koo Lee, Deok-Yong Cho, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Sergei Ivanov, and Cheol Seong Hwang Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol Chemistry of Materials, 28, 19, 7158-7166 (2016) |
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| 22 |
Kyung Jean Yoon, Woorham Bae, Deog-Kyoon Jeong, and Cheol Seong Hwang Comprehensive writing margin analysis and its application to stacked on diode-one memory device for high density crossbar resistance switching random access memory Advanced Electronic Materials, DOI: 10.1002/aelm.201600326 (2016)
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| 21 |
Hyungkwang Lim, Rohit Soni, Dohun Kim, Guhyun Kim, Vladimir Kornijcuk, Inho Kim, Jong-Keuk Park, Cheol Seong Hwang and Doo Seok Jeong* Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours Nanoscale, DOI: 10.1039/c6nr04072a (2016) |
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| 20 |
Xing Long Shao, Kyung Min Kim, Kyung Jean Yoon, Seul Ji Song, Jung Ho Yoon, Hae Jin Kim, Tae Hyung Park, Dae Eun Kwon, Young Jae Kwon, Yu Min Kim, Xi Wen Hu, Jin Shi Zhao, and Cheol Seong Hwang* A Study of the Transition between the Non-polar and Bipolar Resistance Switching Mechanisms in the TiN/TiO2/Al Memory
Nanoscale, DOI: 10.1039/C6NR02800D (2016)
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| 19 |
Doo Seok Jeong, Kyung Min Kim, Sungho Kim, Byung Joon Choi, and Cheol Seong Hwang Memristors for Energy-Efficient New Computing Paradigms Adv. Electron. Mater., DOI: 10.1002/aelm.201300090 (2016)
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| 18 |
Jung Ho Yoon, Sijung Yoo, Seul Ji Song, Kyung Jean Yoon, Dae Eun Kwon, Young Jae Kwon, Tae Hyung Park, Hye Jin Kim, Xing Long Shao, Yumin Kim, and Cheol Seong Hwang* Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2−x Structure with a Sub-μm2 Cell Area ACS Appl. Mater. Interfaces, DOI: 10.1021/acsami.6b05657 (2016) |
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| 17 |
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, and Cheol Seong Hwang Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films Adv. Mater., DOI: 10.1002/adma.201602787 (2016) |
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| 16 |
Keum Do Kim, Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Taehong Gwon, and Cheol Seong Hwang Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition Journal of Materials Chemistry C, 2016, 4, 6864-6872
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| 15 |
Sijung Yoo, Taehong Gwon, Taeyong Eom, Sanggyun Kim, and Cheol Seong Hwang Multicolor Changeable Optical Coating by Adopting Multiple Layers of Ultrathin Phase Change Material Film ACS Photonics, DOI : 10.1021/acsphotonics.6b00246 (2016) |
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| 14 |
Min Hyuk Park, Han Joon Kim, Yu Jin Kim. Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Franz Fengler, Uwe Schroeder, and Cheol Seong Hwang Effect of Zr Content on the Wake-Up Effect in Hf1−xZrxO2 Films ACS Applied Materials & Interfaces, 8 (24), 15466-15475 (2016) |
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| 13 |
Yu Jin Kim, Hiroyuki Yamada, Taehwan Moon, Young Jae Kwon, Cheol Hyun An, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Min Hyuk Park, and Cheol Seong Hwang Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers Nano Letters, 16, 7, 4375-4381 (2016) |
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| 12 |
Yoonki Hong, Chang-Hee Kim, Jongmin Shin, Kyoung Yeon Kim, Jun Shik Kim, Cheol Seong Hwang and Jong-Ho Lee Highly selective ZnO gas sensor based on MOSFET having a horizontal floating-gate Sensors and Actuators B: Chemical, 232, 653-659 (2016) |
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| 11 |
Sungin Suh, Seung Wook Ryu*, Seongjae Cho, Jun-Rae Kim, Seongkyung Kim, Cheol Seong Hwang and Hyeong Joon Kim* Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor Journal of Vacuum Science & Technology A, 34, 1, 01A136 (2016) |
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| 10 |
Jaehong Park, Joowhi Lee, Cheol Seong Hwang and Jung-Hae Choi Atomic and electronic structures of a-ZnSnO3/a-SiO2 interface by ab initio molecular dynamics simulations Physica Status Solidi B, 9, 253, 1765-1770 (2016) |
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| 9 |
Hyungkwang Lim, Hyung-Woo Ahn, Vladimir Kornijcuk, Guhyun Kim, Jun Yeong Seok, Inho Kim, Cheol Seong Hwang and Doo Seok Jeong Relaxation oscillator-realized artificial electronic neurons, their responses, and noise Nanoscale, 18, 9629-9640 (2016)
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| 8 |
Susant K. Acharya, Raveendra Venkata Nallagatla, Octolia Togibasa, Bo W. Lee, Chunli Liu, Chang U. Jung, Bae Ho Park, Ji-Yong Park, Yunae Cho, Dong-Wook Kim, Janghyun Jo, Deok-Hwang Kwon, Miyoung Kim, Cheol Seong Hwang, and Seung C. Chae Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory ACS Applied Materials & Interfaces, 12, 8, 7902-7911 (2016)
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