38 |
F. Kurnia, Hadiyawarman, C. U. Jung and Chunli Liu, S. B. Lee and S. M. Yang, H. W. Park, S. J. Song and C. S. Hwang Effect of NiO Growth Conditions on the Bipolar Resistance Memory Switching of Pt/NiO/SRO Structure Journal of the Korean Physical Society, 6, 57, 1856-1861 (2010) |
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37 |
Hyung-Suk Jung, Sang-Ho Rha, Hyo Kyeom Kim, Jeong Hwan Kim, Seok-Jun Won, Joohwi Lee, Sang Young Lee, Cheol Seong Hwang, Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics IEEE Electron Device Letters, 12, 31, 1479-1481 (2010) |
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36 |
Jung Ho Yoon, Kyung Min Kim, Min Hwan Lee, Seong Keun Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, and Cheol Seong Hwang Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior Applied Physics Letters, 23, 97, 232904 (2010) |
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35 |
Kyung Min Kim, Min Hwan Lee, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, and Cheol Seong Hwang Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model Applied Physics, 16, 97, 162912 (2010) |
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34 |
Jeong Hwan Han, Sang Woon Lee, Seong Keun Kim, Sora Han, Cheol Seong Hwang, Christian Dussarrat, and Julien Gatineau Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas Chemistry of Materials, 20, 22, 5700-5706 (2010) |
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33 |
Seol Choi, Byung Joon Choi, Taeyong Eom, Jae Hyuck Jang, Woongkyu Lee, and Cheol Seong Hwang Growth and Phase Separation Behavior in Ge-Doped Sb-Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions The Journal of Physical Chemistry C, 41, 114, 17899-17904 (2010) |
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32 |
Deok-Yong Cho, Hyung-Suk Jung, Jeong Hwan Kim, and Cheol Seong Hwang Monocliniclike local atomic structure in amorphous ZrO2 thin film Applied Physics Letters, 14, 97, 141905 (2010) |
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31 |
Byung Joon Choi, Seol Choi, Taeyong Eom, Sang Ho Rha, Kyung Min Kim, and Cheol Seong Hwang Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation Applied Physics Letters, 13, 97, 132107 (2010) |
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30 |
Seong Keun Kim, Sang Woon Lee, Jeong Hwan Han, Bora Lee, Seungwu Han, Cheol Seong Hwang Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory Advanced Functional Materials, 18, 20, 2989-3003 (2010) |
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29 |
Deok-Yong Cho, Hyung-Suk Jung and Cheol Seong Hwang Structural properties and electronic structure of HfO2-ZrO2 composite films Physical Review B, 82, 094104 (2010) |
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28 |
Yo-Sep Min, Cheng Jin An, Seong Keun Kim, Jaewon Song, and Cheol Seong Hwang Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition Bulletin of the Korean Chemical Society, 9, 31, 2503 (2010) |
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27 |
Gun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, Hyun Ju Lee, Deok-Yong Cho, Jeong Hwan Han and Cheol Seong Hwang A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory Nanotechnology, 21, 385202 (2010) |
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26 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Joohwi Lee, Sang Woon Lee, Un Ki Kim, Minha Seo, Hyung Suk Jung, Sang Young Lee, and Cheol Seong Hwang Optimized Electrical Properties and Chemical Structures of SrTiO3 Thin Films on Si Using Various Interfacial Barrier Layers Journal of The Electrochemical Society, 10, 157, G216-G220 (2010) |
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25 |
Jung-Hae Choi, Kwang-Duk Na, Seung-Cheol Lee, and Cheol Seong Hwang First-principles study on the formation of a vacancy in Ge under biaxial compressive strain Thin Solid Films, 22, 518, 6373-6377 (2010) |
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24 |
Gun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, Min Hwan Lee, Seul Ji Song, and Cheol Seong Hwang Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory Journal of The Electrochemical Society, 10, 157, G211-G215 (2010) |
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23 |
Min Hwan Lee, Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Jung Ho Yoon, and Cheol Seong Hwang Scanning probe based observation of bipolar resistive switching NiO films Applied Physics Letters, 6, 97, 062909 (2010) |
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22 |
Minha Seo, Seong Keun Kim, Jeong Hwan Han, and Cheol Seong Hwang Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 Interlayer Chemistry of Materials, 15, 22, 4419-4425 (2010) |
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21 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Choong-Ki Lee, Kwang Duk Na, Sang Young Lee, Hyung-Suk Jung, Miyoung Kim, Seungwu Han, and Cheol Seong Hwang Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping Chemistry of Materials, 14, 22, 4175-4184 (2010) |
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20 |
Hyun Ju Lee, Min Hyuk Park, Yo-Sep Min, Guylhaine Clavel, Nicola Pinna, and Cheol Seong Hwang Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination The Journal of Physical Chemistry C, 29, 114, 12736-12741 (2010) |
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19 |
Kyung Min Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Min Hwan Lee, Jeong Ho Yoon and Cheol Seong Hwang Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures Nanotechnology, 21, 305203 (2010) |
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