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Total Papers : 624          Total Conferences : 902

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38

Kyung Min Kim, Nuo Xu, Xinglong Shao, Kyung Jean Yoon, Hae Jin Kim, R. Stanley Williams*, and Cheol Seong Hwang*

Single-Cell Stateful Logic Using a Dual-Bit Memristor

Phys. Status Solidi RRL, DOI:10.1002/pssr.201800629 (2018)

37

Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder, and Cheol Seong Hwang

Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides

Advanced Electronic Materials, 1800522 (2018)


36

Young Hwan Lee, Seung Dam Hyun, Hae Jin Kim, Jun Shik Kim, Chanyoung Yoo, Taehwan Moon, Keum Do Kim, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Jangho Roh, Min Hyuk Park*, Cheol Seong Hwang*

Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films

Advanced Electronic Materials, 1800436 (2018)

35

Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang

Morphotropic Phase Boundary of Hf1−xZrxO2 Thin Films for Dynamic Random Access Memories

ACS Applied Materials & Interfaces 10 (49), 42666-42673 (2018)

34

Sang Hyeon Kim†, Woongkyu Lee, Cheol Hyun An, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, CHeol Seong Hwang

Effect of Growth Temperature During the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/ SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications

ACS Appl. Mater. Interfaces, 10, 41544 (2018)

33

Cheol Hyun An, Woongkyu Lee, Sang Hyeon Kim, Cheol Jin Cho, Dong-Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, Woojin Jeon*, and Cheol Seong Hwang*

Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition

Phys. Status Solidi. RRL. DOI: 10.1002/pssr.201800454 (2018)

32

Tae Hyung Park†, Young Jae Kwon†, Hae Jin Kim, Hyo Cheon Woo, Gil Seop Kim, Cheol Hyun An, Yumin Kim, Dae Eun Kwon and Cheol Seong Hwang

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory

ACS Appl. Mater. Interfaces, 10, 21445-21450 (2018)

31

Woongkyu Lee, Cheol Jin Cho, Woo Chul Lee, Cheol Seong Hwang, Robert P. H. Chang and Seong Keun Kim*

MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors

Journal of Materials Chemistry C, 6, 13250-13256 (2018)

DOI:10.1039/C8TC04167A

30

Kyung Seok Woo, Yongmin Wang, Jihun Kim, Yumin Kim, Young Jae Kwon, Jung Ho Yoon, Woohyun Kim, and Cheol Seong Hwang

A True Random Number Generator Using Threshold-Switching-Based Memristors in an Efficient Circuit Design

Advanced Electronic Materials, DOI: 10.1002/aelm.201800543 (2018)

29

Hyun Jae Lee†, Taehwan Moon†, Cheol Hyun An, and Cheol Seong Hwang

2D Electron Gas at the Interface of Atomic-Layer-Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate

Advanced Electronic Materials, 5, 1, 201800527 (2018)

28

Dmitry S. Kuzmichev, Yuri Y. Lebedinskii, Cheol Seong Hwang and Andrey M. Markeev

Atomic Layer Deposited Oxygen-Deficient TaOx Layers for Electroforming-Free and Reliable Resistance Switching Memory

Phys. Status Solidi RRL, 12, 10, 1800429 (2018)

27

Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang

Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films

ACS Applied Materials & Interfaces 10 (41), 35374-35384  (2018)

26

Taehwan Moon, Hyun Jae Lee, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, and Cheol Seong Hwang

Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3

Advanced Electronic Materials, 4, 12, 1800388 (2018)

25

Maxim G. Kozodaev, Anna G. Chernikova, Roman R. Khakimov, Min Hyuk Park, Andrey M. Markeev and Cheol Seong Hwang

La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors

APPLIED PHYSICS LETTERS, 113, 123902 (2018)

24

Konstantin V. Egorov, Dmitry S. Kuzmichev, Andrey A. Sigarev, Denis I. Myakota, Sergey S. Zarubin, Pavel S. Chizov, Timofey V. Perevalov, Vladimir A. Gritsenko, Cheol Seong Hwang, Andrey M. Markeev

Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control

Journal of Materials Chemistry C6, 9667-9674 (2018)        

23

Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang

Review and perspective on ferroelectric HfO2-based thin films for memory applications

MRS Communications, 8, 3, 795-808 (2018)

22

Hehe Zhang, Sijung Yoo, Stephan Menzel, Carsten Funck, Felix Cüppers, Dirk J. Wouters, Cheol Seong Hwang, Rainer Waser, and Susanne Hoffmann-Eifert

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

ACS Appl. Mater. Interfaces, 10, 35, 29766–29778 (2018)

21

Woongkyu Lee, Cheol Hyun An, Sijung Yoo, Woojin Jeon, Min Jung Chung, Sang Hyeon Kim, and Cheol Seong Hwang*

Electrical Properties of ZrO2/Al2O3/ZrO2-Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials

Phys. Status Solidi RRL, 12, 10, 1800356 (2018)

20



Yichuan Wang, Yu Yan , Chen Wang, Yuting Chen, Junye Li, Jinshi Zhao, and Cheol Seong Hwang

Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory

Applied Physics Letters, 113, 072902, 1-5 (2018)

19

Nuo Xu, Kyung Jean Yoon, Kyung Min Kim, Liang Fang, and Cheol Seong Hwang

Fully Functional Logic-In-Memory Operations Based on a Reconfigurable Finite-State Machine Using a Single Memristor

Advanced Electronic Materials, 1800189 (2018)