| 16 |
Seung-hyun Kim, C.Y. Koo , S-M. Ha, H-J. Woo, D-Y. Park, J.E. Lim, C. S. Hwang and J. Ha Thickness scaling of Pb(Zr,Ti)O3 thin films and Pt electrodes for high density FeRAM devices Integrated Ferroelectrics, 1, 48, 139-147 (2002)
|
 |
 |
| 15 |
Moonju Cho, Jaehoo Park, Hong Bae Park, Cheol Seong Hwang, Jaehack Jeong, Kwang Soo Hyun, Young-Wug Kim, Chang-bong Oh, and Hee-Sung Kang Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate Applied Physics Letters, 19, 81, 3630-3632 (2002)
|
|
|
| 14 |
Ji-Eun Lim, Dong-Yeon Park, Jae Kyeong Jeong, Gregor Darlinski, Hyeong Joon Kim, Cheol Seong Hwang, Seung-Hyun Kim, Chang-Young Koo, Hyun-Jung Woo, Dong-Su Lee and Jowoong Ha Dependence of ferroelectric performance of sol-gel derived Pb(Zr,Ti)O3 thin films on bottom-Pt-electrode thickness Applied Physics Letters, 17, 81, 3224-3226 (2002)
|
|
|
| 13 |
Cheol Seong Hwang, Sang Yong No, Jaehoo Park, Hyeong Joon Kim, Ho Jin Cho, Young Ki Han, and Ki Young Oh Cation composition control of MOCVD(Ba,Sr)TiO3 thin films along the capacitor hole Journal of The Electrochemical Society, 10, 149, G585-G592 (2002)
|
|
|
| 12 |
Seung-Hyun Kim, D-Y. Park, H-J. Woo, D-S. Lee, J. Ha, Cheol Seong Hwang, I-B. Shim, and A. I. Kingon Orientation effects in chemical solution derived Pb(Zr0.3,Ti0.7)O3 thin films on ferroelectric properties Thin Solid Films, 1-2, 416, 264-270 (2002)
|
|
|
| 11 |
Jae Kyeong Jeong, Cheol Seong Hwang and Hyeong Joon Kim Low Temperature 4H-SiC Epitaxial Growth on 4H-SiC (112¯ 0) and (11¯ 00) Faces by Organometallic Chemical Vapor Deposition Journal of The Electrochemical Society, 9, 149, G526-G531 (2002)
|
|
|
| 10 |
Jin Shi-Zhao, Ji Eun Lim, Moon Joo Cho, Cheol Seong Hwang, and Seung-Hyun Kim Heat-treatment-induced ferroelectric fatigue of Pt/Sr1-xBi2+yTa2O9/Pt thin-film capacitors. Applied Physics Letters, 8, 81, 1477-1480 (2002)
|
|
|
| 9 |
Moonju Cho, Jaehoo Park, Hong Bae Park, Cheol Seong Hwang, Jaehack Jeong, and Kwang Soo Hyun Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate Applied Physics Letters, 2, 81, 334-336 (2002)
|
|
|
| 8 |
Seung-Hyun Kim, D-Y. Park, H-J. Woo, D-S. Lee, J. Ha and Cheol Seong Hwang Effects of IrO2/Pt hybrid electrodes on the crystallization and ferroelectric performances of sol-gel-derived Pb(Zr,Ti)O3 thin film capacitors Journal of Materials Research, 07, 17, 1735-1742 (2002)
|
|
|
| 7 |
Jaewon Song, Hye Ryeong Kim, Jaehoo Park, Seehwa Jeong, and Cheol Seong Hwang Oxidation behavior of TiAlN barrier layers with and without thin metal overlayers for memory capacitor applications Journal of Materials Research, 07, 17, 1789-1794 (2002)
|
|
|
| 6 |
Cheol Seong Hwang Thickness-dependent dielectric constants of (Ba,Sr)TiO3 thin films with Pt or conducting oxide electrodes Journal of Applied Physics, 1, 92, 432-437 (2002)
|
|
|
| 5 |
Yongho Seo, Wonho Jhe, and Cheol Seong Hwang Electrostatic force microscopy using a quartz tuning fork Applied Physics Letters, 23, 80, 4324-4326 (2002)
|
|
|
| 4 |
Sang Yeol Kang, Ha Jin Lim, Cheol Seong Hwang and Hyeong Joon Kim Metal-organic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl- Propylcyclopentadienylruthenium(II) and oxygen Journal of Electrochemical Society, 6, 149, C317-C323 (2002)
|
|
|
| 3 |
Jihoon Kim, Jaewon Song, Ohsung Kwon, Sungkeun Kim, Cheol Seong Hwang, Sang-Hee'Ko Park, Sun Jin Yun, Jaehack Jeong and Kwang Soo Hyun Improvement in electrical insulating properties of 10-nm-thick Al2O3 film grown on Al/TiN/Si substrate by remote plasma annealing at low temperatures. Applied Physics Letters, 15, 80, 2734-2736 (2002)
|
|
|
| 2 |
Byoung Keon Park, Jaehoo Park, Moonju Cho, Cheol Seong Hwang, Kiyoung Oh, Youngki Han and Doo Young Yang Interfacial reaction between chemically vapor deposited HfO2 thin films and HF-cleaned Si substrate during film growth and postannealing Applied Physics Letters, 13, 80, 2368-2370 (2002)
|
|
|
| 1 |
Jaehoo Park, Byung Keon Park, Moonjoo Cho, Cheol Seong Hwang, Kiyoung Oh and Doo Young Yang Chemical Vapor Deposition of HfO2 Thin Films Using a Novel Carbon-Free Precursor: Characterization of the Interface with the Silicon Substrate Journal of The Electrochemical Society, 1, 149, G89-G94 (2002)
|
|
|
HOME > Publication > Paper