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Total Papers : 624          Total Conferences : 902

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28

Jun Jiang, Zi Long Bai, Zhi Hui Chen, Long He, David Wei Zhang, Qing Hua Zhang, Jin An Shi, Min Hyuk Park, James F. Scott, Cheol Seong Hwang, An Quan Jiang

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Nature materials, 17(1), 49 (2018)

27

Taehong Gwon, Ahmed Yousef Mohamed, Chanyoung Yoo, Eui-sang Park, Sanggyun Kim, Sijung Yoo, Han-Koo Lee, Deok-Yong Cho,, and Cheol Seong Hwang

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition

ACS Appl. Mater. Interfaces (2017)

DOI: 10.1021/acsami.7b12946

26

Yu Jin Kim, Hyeon Woo Park, Seung Dam Hyun, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Taehwan Moon, Yong Bin Lee, Min Hyuk Park, and Cheol Seong Hwang

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation

Nano Letters, 17, 7796-7802 (2017)

DOI: 10.1021/acs.nanolett.7b04008

25

In-Hwan Baek, Jung Joon Pyeon, Young Geun Song, Taek-Mo Chung, Hae-Ryoung Kim, Seung-Hyub Baek, Jin-Sang Kim, Ji-Won Choi, Cheol Seong Hwang, Jeong Hwan Han, Seong Keun Kim

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

Chemistry of Materials, 29(19), 8100-8110 (2017)

24

Taehong Gwon, Taeyong Eom, Sijung Yoo, Chanyoung Yoo, Eui-sang Park, Sanggyun Kim, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Sergei Ivanov, and Cheol Seong Hwang

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms

Chemistry of Materials, DOI:10.1021/acs.chemmater.7b01236 (2017)

23


M. G. Kozodaev, A. G. Chernikova, E. V. Korostylev, M. H. Park, U. Schroeder, C. S. Hwang, and A. M. Markeev

Ferroelectric properties of lightly doped La:HfO 2 thin films grown by plasma-assisted atomic layer deposition

APPLIED PHYSICS LETTERS, 111, 132903 (2017)

22

Cheol Jin Cho, Myoung-Sub Noh, Woo Chul Lee, Cheol Hyun An, Chong-Yun Kang, Cheol Seong Hwang, and Seong Keun Kim*

Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors

Journal of Materials Chemistry C, 5, 9405-9411 (2017)

DOI:10.1039/C7TC03467A

21

Gun Hwan Kim, Hyunsu Ju, Min Kyu Yang, Dong Kyu Lee, Ji Woon Choi, Jae Hyuck Jang, Sang Gil Lee, Ik Su Cha, Bo Keun Park, Jeong Hwan Han, Taek-Mo Chung, Kyung Min Kim, Cheol Seong Hwang,* and Young Kuk Lee*

Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device

small, 1701781 (2017) DOI: 10.1002/small.201701781

20

InWon Yeu, Jaehong Park, Gyuseung Han, Cheol Seong Hwang & Jung-Hae Choi

Surface reconstruction of InAs(001) depending on the pressure and temperature examined by density functional thermodynamics

Scientific Reports, 7, 10691, (2017)

 

19

Woo Chul Lee, Cheol Jin Cho, Sangtae Kim, Eric S. Larsen, Jung Hwan Yum, Christopher W. Bielawski, Cheol Seong Hwang, and Seong Keun Kim

Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O3 as Oxygen Sources

J. Phys. Chem. C, 121(32), pp 17498-17504 (2017) 

18

Swastika Banerjee, Jaehong Park, Cheol Seong Hwang, Jung-Hae Choi, Seung-Cheol Lee and Swapan K. Pati*

Regulation of transport properties by polytypism: a computational study on bilayer MoS2

Phys. Chem. Chem. Phys., 19, 21282 (2017) 


17

Jung Ho Yoon, Dae Eun Kwon, Yumin Kim, Young Jae Kwon, Kyung Jean Yoon, Tae Hyung Park, Xing Long Shao and Cheol Seong Hwang

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system

Nanoscale, DOI: 10.1039/C7NR02215H (2017)

16

Keum Do Kim, Young Hwan Lee, Taehong Gwon, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park*, Cheol Seong Hwang*

Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors

Nano Energy, 39, 390-399 (2017)

15

Susant Kumar Acharya, Janghyun Jo, Nallagatlla Venkata Raveendra, Umasankar Dash, Miyoung Kim, Hionsuck Baik, Sangik Lee, Bae Ho Park, Jae Sung Lee, Seung Chul Chae, Cheol Seong Hwang* and Chang Uk Jung*

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory

Nanoscale, 8, 10502 - 10510 (2017)


14

Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Tony Schenk, Woongkyu Lee, Keum Do Kim, Franz P. G. Fengler, Thomas Mikolajick, Uwe Schroeder,* and Cheol Seong Hwang*

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

Nanoscale, 9, 9973-9986 (2017)

13

Young Hwan Lee, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Min Hyuk Park,* and Cheol Seong Hwang*

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

Nanotechnology, 28, 30, 305703 (2017)

12

Kyung Jean Yoon, Gun Hwan Kim, Sijung Yoo, Woorham Bae, Jung Ho Yoon, Tae Hyung Park, Dae Eun Kwon, Yeong Jae Kwon, Hae Jin Kim, Yu Min Kim, and Cheol Seong Hwang*

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Advanced Electronic Materials, DOI: 10.1002/aelm.201700152 (2017)

11

Hyeongjoo Moon, Vishal Zade, Hung-Sen Kang, Jin-Woo Han, Eunseok Lee*, Cheol Seong Hwang & Min Hwan Lee*

Interfacial chemical bonding-mediated ionic resistive switching

Scientific Reports, 7, 1264 (2017)

10

Tae Hyung Park, Hae Jin Kim, Woo Young Park, Soo Gil Kim, Byung Joon Choi and Cheol Seong Hwang *

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability

Nanoscale, 9, 6010 (2017)

9

Konstantin V. Egorov, Dmitry S. Kuzmichev, Pavel S. Chizhov, Yuri Yu. Lebedinskii, Cheol Seong Hwang*, and Andrey M. Markeev*

In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications

ACS Appl. Mater. Interfaces, DOI: 10.1021/acsami.7b00778 (2017)