28 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, and Cheol Seong Hwang, Jong Hoon Kim, Gee-Man Kim, Jae Ho Choi, Kang Joon Choi, and Jae Hak Jeong Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma Applied Physics Letters, 91, 252106 (2007) |
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27 |
Kuan Yew Cheong, Jeong Hyun Moon, Tae Joo Park, Jeong Hwan Kim, Cheol Seong Hwang, Hyeong Joon Kim, Wook Bahng and Nam-Kyun Kim Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC IEEE Transactions on Electron Devices, 12, 54, 3409 (2007) |
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26 |
Takayuki Watanabe, Susanne Hoffmann-Eifert, Frank Peter, Shaobo Mi, Chunlin Jia, Cheol Seong Hwang and Rainer Wasera Liquid Injection ALD of Pb(Zr,Ti)Ox Thin Films by a Combination of Self-Regulating Component Oxide Processes Journal of The Electrochemical Society, 12, 152, G262-G269 (2007) |
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25 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Minha Seo, Cheol Seong Hwang, and Jeong Yeon Won Comparison of Electrical Properties Between HfO2 Films on Strained and Relaxed Si1−xGex Substrates Electrochemical and Solid-State Letters, 12, 10, G97-G100 (2007) |
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24 |
Dail Eom, Sang Yong No, Heechul Park, Cheol Seong Hwang, and Hyeong Joon Kim Improvement in Thermal Stability of Stacked Structures of Aluminum Nitride and Lanthanum Oxide Thin Films on Si Substrate Electrochemical and Solid-State Letters, 12, 10, G93-G96 (2007) |
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23 |
Hyun Ju Lee, Gun Hwan Kim, Keun Lee, and Cheol Seong Hwang Initial Growth Behavior of a Lead Oxide Thin Film on Ir Substrates by Atomic Layer Deposition Electrochemical and Solid-State Letters, 12, 10, G89-G92 (2007) |
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22 |
Gyu Weon Hwang, Wan Don Kim, Cheol Seong Hwang, Yo-Sep Min and Young Jin Cho Atomic Layer Deposition of Bi1−x−yTixSiyOz Thin Films Using H2O Oxidant and Their Characteristics Depending on Si Content Journal of the Electrochemical Society, 11, 154, H915-H918 (2007) |
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21 |
Beom Seok Kim, Sang Yeol Kang, Han Seok Seo, Cheol Seong Hwang and Hyeong Joon Kim Improved Nucleation Behavior of Ru Thin Films Prepared by MOCVD on TiCl4 Pretreated Substrates Electrochemical and Solid-State Letters, 10, 10, D113-D115 (2007) |
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20 |
Byung Joon Choi, Seol Choi, Yong Cheol Shin, Kyung Min Kim, Cheol Seong Hwang, Yoon Jung Kim, Young Jin Son, and Suk Kyoung Hong Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug Chemistry of Materials, 19, 4387-4389 (2007) |
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19 |
Seong Keun Kim, Sang Young Lee, Minha Seo, Gyu-Jin Choi, and Cheol Seong Hwang Impact of O3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications Journal of Applied Physics, 102, 024109 (2007) |
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18 |
Yo-Sep Min, Eun Ju Bae, Jong Bong Park, Un Jeong Kim, Wanjun Parka, Jaewon Song and Cheol Seong Hwang, Noejung Park ZnO nanoparticle growth on single-walled carbon nanotubes by atomic layer deposition and a consequent lifetime elongation of nanotube field emission Applied Physics Letters, 90, 263104 (2007) |
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17 |
P. Zhou, Y. C. Shin, B. J. Choi, S. Choi, C. S. Hwang, Y. Y. Lin, H. B. Lv, X. J. Yan, T. A. Tang, L. Y. Chen, and B. M. Chen Dynamic Threshold Switching Behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 Thin Films Using Scanning Electrical Nanoprobe Electrochemical and Solid-State Letters, 9, 10, H281-H283 (2007) |
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16 |
Kyung Min Kim, Byung Joon Choi, Yong Cheol Shin, Seol Choi, and Cheol Seong Hwang Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films Applied Physics Letters, 91, 012907 (2007) |
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15 |
Hyo-Shin Ahn and Seungwu Han, Cheol Seong Hwang Pairing of cation vacancies and gap-state creation in TiO2 and HfO2 Applied Physics Letters, 90, 252908 (2007) |
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14 |
Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films Applied Physics Letters, 90, 242906 (2007) |
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13 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Minha Seo,Kwang Duk Na, Cheol Seong Hwang Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer Microelectronic Engineering, 84, 2226–2229 (2007) |
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12 |
Moonju Cho, Jeong Hwan Kim, Cheol Seong Hwang, Hyo-Shin Ahn, Seungwu Han, and Jeong Yeon Won Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability Applied Physics Letters, 90, 182907 (2007) |
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11 |
Takayuki Watanabe, Susanne Hoffmann-Eifert, Lin Yang, Andreas Rudiger, Carsten Kugeler, Cheol Seong Hwang, and Rainer Waser Liquid Injection Atomic Layer Deposition of TiOx Films Using Ti[OCH(CH3)2]4 Journal of The Electrochemical Society, 6, 154, G134-140 (2007) |
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10 |
Oh Seong Kwon, Sang Woon Lee, Jeong Hwan Han, and Cheol Seong Hwang Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O Journal of The Electrochemical Society, 6, 154, G127-133 (2007) |
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9 |
Tae Joo Park, Jeong Hwan Kim, Min Ha Seo, Jae Hyuck Jang, and Cheol Seong Hwang Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment Applied Physics Letters, 90, 152906 (2007) |
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