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Total Papers : 624          Total Conferences : 902

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17

Jeong-Suong Yang, Seung-Hyun Kim, Jung-Hoon Yeom, Chang-Young Koo, Cheol Seong Hwang, Euijoon Yoon, Dong-Joo Kim, and Jowoong Ha

Piezoelectric and Pyroelectric Properties of Pb(Zr,Ti)O3 Films for Micro-Sensors and Actuators

Integrated Ferroelectrics, 1, 54, 515-525 (2003)

16

Moonju Cho, Hong Bae Park, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang, Gi Hoon Jang, and Jaehack Jeong

High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant

Applied Physics Letters, 26, 83, 5503-5505 (2003)

15

Woo Young Park, Kun Ho Ahn, and Cheol Seong Hwang

Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off axis rf magnetron sputtering

Applied Physics Letters, 21, 83, 4387-4389 (2003)

14

Seung-Hyun Kim, Jeong-Suong Yang, Chang-Young Koo, Jung-Hoon Yeom, Euijoon Yoon, Cheol Seong Hwang, Joon-Shik Park, Sung-Goon Kang, Dong-Joo Kim and Jowoong Ha

Dielectric and electromechanical properties of Pb(Zr,Ti)O3 thin films for piezo-microelectromechanical devices

Japanese Journal of Applied Physics, Part 1. No. 9B, 42, 5952-5955 (2003)

13

Hyeong Joon Kim, Ju Cheol Shin, Cheol Seong Hwang and Sang Yong No

Deposition and characterization of high dielectric thin films for memory device applications

Surface Review and Letters, 04, 10, 591-604 (2003)

12

Seehwa Jeong, Jin Shi-Zhao, Hye Ryoung Kim, Dong-Yeon Park, Cheol Seong Hwang, Young Ki Han, Cheol Hoon Yang, Ki Young Oh, Seung-Hyun Kim, Dong-Soo Lee, and Jowoong Ha

MOCVD of PZT Thin Films with Different Precursor Solutions for Testing Mass-Production Compatibility

Journal of The Electrochemical Society, 6, 163, C678-C687 (2003)

11

Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang, Jong-Pyo Kim, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang, Jong-Cheol Lee and Se-Jung Oh

Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant

Journal of Applied Physics, 5, 94, 3641-3647 (2003)

10

Chihoon Lee, Jihoon Choi, Moonju Cho, Jaehoo Park, Cheol Seong Hwang, Hyeong Joon Kim , Jaehack Jeong, and Wonshik Lee

Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate

Applied Physics Letters, 7, 83, 1403-1405 (2003)

9

Moonju Cho, Hong Bae Park, Jaehoo Park, Cheol Seong Hwang, Jong-Cheol Lee, Se-Jung Oh, Jaehack Jeong, Kwang Soo Hyun, Hee-Sung Kang, Young-Wuk Kim, and Jong-Ho Lee

Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stack grown by atomic layer deposition on Si substrate

Journal of Applied Physics, 4, 94, 2563-2571 (2003)

8

Hong Bae Park, Moonju Cho, Jaehoo Park, Cheol Seong Hwang, Jong-Cheol Lee and Se-Jung Oh

Effects of plasma nitridation of Al2O3 interlayer on thermal stability, fixed charge density, and interfacial trap states of HfO2 gate dielectric films grown by atomic layer deposition

Journal of Applied Physics, 3, 94, 1898-1903 (2003)

7

Jae Bin Lee, Hyeong Joon Kim, Soo Gil Kim, Cheol Seong Hwang, Seong-Hyeon Hong, Young Hwa Shin and Neung Hun Lee

Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator

Thin Solid Films, 1-2, 435, 179-185 (2003)

6

Ha Jin Lim, Sang Yeol Kang, Cheol Seong Hwang, and Hyeong Joon Kim

Analysis of stresses in Ru thin films prepared by Chemical Vapor Deposition

Journal of Vacuum Science & Technology A, 4, 21, 1381-1385 (2003)

5

Seung-Hyun Kim, Chang Young Koo, Dong-Yean Park, Dong-Su Lee, Jung-Hoon Yeom, Jieun Lim, Cheol Seong Hwang, and Jowoong Ha

Scaling issues of Pb(Zr, Ti)O3 capacitor stack for high density FeRAM devices

Journal of the Korean Physical Society, suppl.4, 42, S1417-S1419 (2003)

4

Seung-Hyun Kim, Jeong-Suong Yang, Chang-Young Koo, Jung-Hoon Yeom, Dong-Su Lee, Cheol Seong Hwang, Kyu-Ho Hwang, and Jowoong Ha

Electromechanical properties of Pb(Zr, Ti)O3 films for MEMS applications

Journal of Korean Physical Society, suppl.4, 42, S1101-S1104 (2003)

3

In Sang Jeon, Jaehoo Park, Dail Eom, Cheol Seong Hwang, Hyeong Joon Kim, Chan Jin Park, Hoon Young Cho, Jong-Ho Lee, Nae-In Lee, and Ho-Kyu Kang

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal-Oxide-Semiconductor Capacitor

Japanese Journal of Applied Physics, Part 1. No.3, 42, 1222-1226 (2003)

2

Dong-Su Lee, Hyun-Jung Woo, Dong-Yeon Park, Jowoong Ha, Cheol Seong Hwang and Euijoon Yoon

Effects of The Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer

Japanese Journal of Applied Physics, Part 1. No. 2A, 42, 630-633 (2003)

1

In Sang Jeon, Jaehoo Park, Dail Eom, Cheol Seong Hwang, Hyeong Joon Kim, Chan Jin Park, Hoon Young Cho, Jong-Ho Lee, Nae-In Lee, and Ho-Kyu Kang

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

Applied Physics Letters, 7, 82, 1066-1068 (2003)