| 22 |
Yoon Jang Chung, Jeong Hwan Kim, Un Ki Kim, Myungkwan Ryu, Sang Yoon Lee, and Cheol Seong Hwang Study on the Existence of Abnormal Hysteresis in Hf-In-Zn-O Thin Film Transistors under Illumination Electrochemical and Solid-State Letters, 7, 14, H300 (2011)
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| 21 |
Yo-Sep Min, Il Ha Lee, Young Hee Lee, and Cheol Seong Hwang Botryoidal growth of crystalline ZnO nanoparticles on a forest of single-walled carbon nanotubes by atomic layer deposition CrystEngComm, 10, 13, 3451 (2011)
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| 20 |
Boris Hudec, Kristína Hušeková, Aivar Tarre, Jeong Hwan Han, Sora Han, Alica Rosová, Woongkyu Lee, Aarne Kasikov, Seul Ji Song, Jaan Aarik, Cheol Seong Hwang, Karol Fröhlich Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes Microelectronic Engineering, 7, 88, 1514-1516 (2011)
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| 19 |
Jeong Hwan Kim, Un Ki Kim, Yoon Jang Chung, and Cheol Seong Hwang Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer Physica Status Solidi Rapid Research Letters, 5-6, 5, 178-180 (2011)
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| 18 |
Sang Woon Lee, Jeong Hwan Han, Sora Han, Woongkyu Lee, Jae Hyuck Jang, Minha Seo, Seong Keun Kim, C. Dussarrat, J. Gatineau, Yo-Sep Min, and Cheol Seong Hwang Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors Chemistry of Materials, 8, 23, 2227 (2011)
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| 17 |
Bora Lee, Choon-ki Lee, Cheol Seong Hwang, and Seungwu Han Influence of exchange-correlation functionals on dielectric properties of rutile TiO2 Current Applied Physics, 1, 11, S293-S296 (2011)
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| 16 |
Bong Seob Yang, Myung Soo Huh, Seungha Oh, Ung Soo Lee, Yoon Jang Kim, Myeong Sook Oh, Jae Kyeong Jeong*, Cheol Seong Hwang, and Hyeong Joon Kim* Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors Applied Physics Letters, 12, 98, 122110 (2011)
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| 15 |
An Quan Jiang, Can Wang, Kui Juan Jin, Xiao Bing Liu, James F. Scott*, Cheol Seong Hwang*, Ting Ao Tang, Hui Bin Liu, Guo Zhen Yang A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors Advanced Materials, 10, 23, 1277–1281, (2011)
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| 14 |
Yoon Jang Chung, Jeong Hwan Kim, Un Ki Kim, Deok-Yong Cho, Hyung Suk Jung, Jae Kyeong Jeong, and Cheol Seong Hwang Direct observation of hole current in amorphous oxide semiconductors under illumination Electrochemical and Solid-State Letters, 6, 14, G35 (2011)
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| 13 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Un Ki Kim, Sang Young Lee, Joohwi Lee, Hyung Suk Jung, and Cheol Seong Hwang Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor Chemistry of Materials, 7, 23, 1654 (2011)
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| 12 |
Kyung Min Kim, Seul Ji Song, Gun Hwan Kim, Jun Yeong Seok, Min Hwan Lee, Jung Ho Yoon, Jucheol Park, and Cheol Seong Hwang Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory Advanced Functional Materials, 9, 21, 1587–1592 (2011)
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| 11 |
Min Hwan Lee, Kyung Min Kim, Seul Ji Song, Sang Ho Rha, Jun Yeong Seok, Ji Sim Jung, Gun Hwan Kim, Jung Ho Yoon, and Cheol Seong Hwang Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy Applied Physics A, 4, 102, 827 (2011)
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| 10 |
Doo Seok Jeong, Goon-Ho Park, Hyungkwang Lim, Cheol Seong Hwang, Suyoun Lee and Byung-ki Cheong Dc current transport behavior in amorphous GeSe films Applied Physics A, 4, 102, 1027 (2011)
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| 9 |
Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung, Se Yeob Park, Rino Choi, Un Ki Kim, Cheol Seong Hwang, Daeseok Lee, Hyungsang Hwang, and Jae Kyeong Jeong Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors Applied Physics Letters, 10, 98, 103509 (2011)
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| 8 |
Hyung-Suk Jung, Jae Hyuck Jang, Deok-Yong Cho, Sang-Ho Jeon, Hyo Kyeom Kim, Sang Young Lee and Cheol Seong Hwang The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics Electrochemical and Solid-State Letters, 5, 14, G17 (2011)
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| 7 |
Sang Woon Lee, Jeong Hwan Han, Seong Keun Kim, Sora Han, Woongkyu Lee, and Cheol Seong Hwang Role of Interfacial Reaction in Atomic Layer Deposition of TiO2 Thin Films Using Ti(O-iPr)2(tmhd)2 on Ru or RuO2 Substrates Chemistry of Materials, 4, 23, 976-983 (2011)
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| 6 |
Min Hwan Lee and Cheol Seong Hwang Resistive switching memory: Observations with scanning probe microscopy Nanoscale, 2, 3, 490-502 (2011)
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| 5 |
Seong Keun Kim, Sora Han, Jeong Hwan Han, and Cheol Seong Hwang Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films Applied Surface Science, 9, 257, 4302-4305 (2011)
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| 4 |
Jae Hyuck Jang, Hyung-Suk Jung, Jeong Hwan Kim, Sang Young Lee, Cheol Seong Hwang, and Miyoung Kim Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy Applied Physics Letters, 2, 109, 023718 (2011)
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| 3 |
Jeong Hwan Kim, Un Ki Kim, Yoon Jang Chung, Ji Sim Jung, Sang Ho Ra, Hyung Suk Jung, Cheol Seong Hwang, Jae Kyeong Jeong, and Sang Yoon Lee The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination Applied Physics Letters, 2, 98, 023507 (2011)
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