| 24 |
Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Yumin Kim, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, Junil Lim, and Cheol Seong Hwang* Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition physica status solidi (RRL)–Rapid Research Letters., 1900373(2019) |
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| 23 |
Soon Hyung Cha, Cheol Hyun An, Seong Tak Cho, Dong-Gun Kim, Dae Seon Kwon, Jun Il Lim, Woojin Jeon*, and Cheol Seong Hwang* Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3-Based Dielectric for Further Scaling of Dynamic Random Access Memory
Phys. Status Solidi RRL , 1900282(2019)
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| 22 |
Kai Liu, Eunjung Ko, Cheol Seong Hwang and Jung-Hae Choi A first-principles study of the structural and electronic properties of the epitaxial Ge(111)/La2O3(001) heterostructure Journal of Physics. D: Applied Physics, 52, 365101 (2019)
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| 21 |
Hyeon Woo Park, Jangho Roh, Yong Bin Lee, and Cheol Seong Hwang* Modeling of Negative Capacitance in Ferroelectric Thin Films Advanced Materials, 1805266 (2019)
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| 20 |
Younjin Jang†, In Won Yeu†, Jun Shik Kim, Jeong Hwan Han, Jung-Hae Choi*, and Cheol Seong Hwang* Reduction of the Hysteresis Voltage in Atomic-Layer-Deposited p-Type SnO Thin-Film Transistors by Adopting an Al2O3 Interfacial Layer Advanced Electronic Materials, 1900371 (2019)
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| 19 |
Jaehong Park, In Won Yeu, Gyuseung Han, Chaun Jang, Joon Young Kwak, Cheol Seong Hwang and Jung-Hae Choi Optical control of the layer degree of freedom through Wannier–Stark states in polar 3R MoS2 Journal of Physics: Condensed Matter 31, 315502 (2019) |
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| 18 |
Yumin Kim†, Young Jae Kwon†, Jihun Kim, Cheol Hyun An, Taegyun Park, Dae Eun Kwon, Hyo Cheon Woo, Hae Jin Kim, Jung Ho Yoon,* and Cheol Seong Hwang* Novel Selector-Induced Current-Limiting Effect through Asymmetry Control for High-Density One-Selector–One-Resistor Crossbar Arrays Advanced Electronic Materials, 1800806 (2019)
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| 17 |
Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder, and Cheol Seong Hwang Broad Phase Transition of Fluorite-Structured Ferroelectrics for Large Electrocaloric Effect Phys. Status Solidi RRL, 1900177 (2019) |
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| 16 |
Yoon Kyeung Lee, Jeong Woo Jeon, Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha, and Cheol Seong Hwang Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals Micromachines, 10, 306 (2019) |
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| 15 |
Yong Kim, Won Hee Jeong, Son Bao Tran, Hyo Cheon Woo, Jihun Kim, Cheol Seong Hwang, Kyeong-Sik Min, and Byung Joon Choi Memristor crossbar array for binarized neural networks AIP Advances, 9, 045131 (2019) |
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| 14 |
Seung Ik Oh, In Hyuk Im, Chanyoung Yoo, Sung Yeon Ryu, Yong Kim, Seok Choi, Taeyong Eom, Cheol Seong Hwang and Byung Joon Choi Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory Micromachines 10, 281 (2019) DOI:10.3390/mi10050281 |
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| 13 |
In-Hwan Baek, Jung Joon Pyeon, Seong Ho Han, Ga-Yeon Lee, Byung Joon Choi, Jeong Hwan Han, Taek-Mo Chung , Cheol Seong Hwang , and Seong Keun Kim High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition ACS Appl. Mater. Interfaces, 11, 16, 14892-14901 (2019)
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| 12 |
Jaehong Park, In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi Role of the Short-Range Order in Amorphous Oxide on MoS2/a-SiO2 and MoS2/a-HfO2 Interfaces Phys. Status Solidi B 256, 1900002 (2019) |
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| 11 |
Guhyun Kim, Vladimir Kornijcuk, Dohun Kim, Inho Kim, Cheol Seong Hwang Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch Array Micromachines, 10(4), 219 (2019)
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| 10 |
Eunjung Ko, Kai Liu, Cheol Seong Hwang, Hyoung Joon Choi, and Jung-Hae Choi Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a-GeO2/Ge Structures Using the First-Principles Scattering-State Method PHYSICAL REVIEW APPLIED 11, 034016 (2019) |
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| 9 |
Kyung Jean Yoon†, Yumin Kim†, and Cheol Seong Hwang* What Will Come After V-NAND - Vertical Resistive Swiching Memory? Advanced Electronic Materials, 1800914, (2019) |
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| 8 |
Keum Do Kim, Yu Jin Kim, Min Hyuk Park, Hyeon Woo Park, Young Jae Kwon, Yong Bin Lee, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Baek Su Kim, Cheol Seong Hwang Transient Negative Capacitance Effect in Atomic-Layer-Deposited Al2O3/Hf0.3Zr0.7O2 Bilayer Thin Film Advanced Functional Materials, 2019, 1808228 |
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| 7 |
Nuo Xu, Liang Fang, Kyung Min Kim, and Cheol Seong Hwang* Time-Efficient Stateful Dual-Bit-Memristor Logic Phys. Status Solidi RRL, DOI:10.1002/pssr.201900033 (2019) |
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| 6 |
Kai Liu, Eunjung Ko, Sangtae Kim, Jaehong Park, Cheol Seong Hwang and Jung-Hae Choi Orientation-dependent structural and electronic properties of Ge/a-GeO2 interfaces: first-principles study Journal of Physics. D: Applied Physics, 52, 155101 (2019)
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| 5 |
In Won Yeu, Gyuseung Han, Jaehong Park, Cheol Seong Hwang, and Jung-Hae Choi Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics Scientific Reports, 9, 1127 (2019) |
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