13 |
T. Eom, S. Choi, B.J.Choi, S.Rha, W. Lee, C.S. Hwang, and M. S. Kim Atomic layer deposition of (GeTe2)x(Sb2Te3)y films using novel precursors Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Poster
|
 |
12 |
M.H.Park, H.J.Lee, and C.S.Hwang Ferroelectric properties of Pt/Pb(Zr,Ti)O3/Al2O3/ZnO/Pt stack capacitors for nonvolatile memory application Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Poster
|
 |
11 |
H.J.Lee, G.H.Kim, M.H.Park, and C. S. Hwang Polarization reversal in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt ferroelectric capacitors Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |
10 |
J.H. Han, S. W. Lee, S. K. Kim, and C. S. Hwang Pulse CVD of RuO2 thin films using a noble Ru precursor for memory application Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |
9 |
S. Y. Lee, H. S. Jung, Y.J. Choi, J.H. Kim, J. Lee, U.K.Kim, S.J. Won, and C.S. Hwang The effect of ALD growth La2O3 layer on Vfb modulation of HfO2, ZrO2, and HfZrOx high-k films Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |
8 |
S. J. Song, K. M. Kim, G.H.Kim, J.Y.Seok, R. Jung, and C. S. Hwang Influence of the capacitive charge on the set-state resistance in TiO2 resistive switching memory Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |
7 |
S. W. Lee, J. H. Han, S. R. Han, and C. S. Hwang Improved growth characteristics of SrTiO3 thin films deposited by Atomic Layer Deposition using Sr(iPr3Cp)2 and Ti(O-iPr)2(thd)2 Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |
6 |
Choi, B. J. Choi, T. Eom, S. Rha, W. Lee, and C. S. Hwang Growth and crystallization behaviors of Ge doped Sb-Te thin films deposited bt a combined plasma enhanced CVD and ALD Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |
5 |
M. H. Lee, K. M. Kim, J.H. Yoon, and C. S. Hwang Impedance spectroscopy observation for examining resistive switching mechanism in TiO2 thin films Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |
4 |
G. H. Kim, J. Y. Seok, K.M. Kim, and C.S. Hwang Influence of electrode material on the interconnect line resistance and performance of resistive cross bar array Á¦ 17ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, È£ÅÚ ÀÎÅÍºÒ°í ¿¢½ºÄÚ, February 24~26 (2010), Oral
|
 |