27 |
Seung Wook Ryu, Jong Ho Lee, Yong Bae Ahn, Choon Hwan Kim, Byung Joon Choi, Cheol Seong Hwang*, and Hyeong Joon Kim* Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory Applied Physics Letters, 93, 172114 (2008) - Oct |
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26 |
Deok-Yong Cho, Tae Joo Park, Kwang Duk Na, Jeong Hwan Kim, and Cheol Seong Hwang Structural disorders in an amorphous HfO2 film probed by x-ray absorption fine structure analysis Physical Review B, 78, 132102 (2008) - Oct |
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25 |
Takayuki Watanabe, Susanne Hoffmann-Eifert, Cheol Seong Hwang, and Rainer Waser Growth Behavior of Atomic-Layer-Deposited Pb(Zr,Ti)Ox Thin Films on Planar Substrate and Three-Dimensional Hole Structures Journal of The Electrochemical Society, 155 (11), D715-D722 (2008) - Sep |
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24 |
Sang Woon Lee, Jeong Hwan Han, Oh Seong Kwon and Cheol Seong Hwang Influences of a crystalline seed layer during atomic layer deposition of SrTiO3 thin films using Ti(O-iPr)2(thd)2, Sr(thd)2, and H2O Journal of The Electrochemical Society, 155 (11) G253-G257(2008) - Sep |
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23 |
Minha Seo, Yo-Sep Min, Seong Keun Kim, Tae Joo Park, Jeong Hwan Kim, Kwang Duk Na and Cheol Seong Hwang Atomic layer deposition of hafnium oxide from tertbutoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability Journal of Materials Chemistry, 18, 4324–4331 (2008) - Aug |
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22 |
Jaewon Song, Him Chan Oh, Tae Joo Park, Cheol Seong Hwang, Sang-Hee Ko Park, Sung Min Yoon, and Chi-Sun Hwang Properties of MIS Capacitors Using the Atomic-Layer-Deposited ZnO Semiconductor and Al2O3 Insulator Journal of The Electrochemical Society, 11, 155, H858-H863 (2008) |
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21 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Cheol Seong Hwang, and Jeong Ho Yoo Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations Journal of Applied Physics, 104, 054101 (2008) |
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20 |
Yo-Sep Min, Eun Ju Bae, Un Jeong Kim, Eun Hong Lee, Noejung Park, Cheol Seong Hwang, and Wanjun Park Unusual transport characteristics of nitrogen-doped single-walled carbon nanotubes Applied Physics Letters, 93, 043113 (2008) |
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19 |
Choong-Ki Lee, Eunae Cho, Hyo-Sug Lee, Cheol Seong Hwang and Seungwu Han First-principles study on doping and phase stability of HfO2 Physical Review B, 78, 012102 (2008) |
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18 |
Jiyoung Jang, Tae Joo Park, Ji-Hwan Kwon, Jae Hyuck Jang, Cheol Seong Hwang, and Miyoung Kim Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe/Si substrates Applied Physics Letters, 92, 232906 (2008) |
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17 |
Sang Woon Lee, Oh Seong Kwon, Jeong Hwan Han and Cheol Seong Hwang Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Atomic Layer Deposition at High Temperature for Dynamic Random Access Memory Applications Applied Physics Letters, 92, 222903 (2008) |
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16 |
Seong Keun Kim, Gyu Jin Choi, Jeong Hwan Kim, and Cheol Seong Hwang Growth Behavior of Al-Doped TiO2 Thin Films by Atomic Layer Deposition Chemistry of Materials, 11, 20, 3723-3727 (2008) |
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15 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Cheol Seong Hwang, Gee-Man Kim, Kang Jun Choi, and Jae Hak Jeong Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films Applied Physics Letters, 92, 202902 (2008) |
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14 |
Jaeyeong Heo, Seok-Jun Won, Dail Eom, Sang Young Lee, Young Bae Ahn, Cheol Seong Hwang*, and Hyeong Joon Kim* The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD Electrochemical Solid-State Letters, 8, 11, H210-H213 (2008) |
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13 |
Dail Eom, Cheol Seong Hwang*, Hyeong Joon Kim*, Mann-Ho Cho, and K. B. Chung Thermal Annealing Effects on the Atomic Layer Deposited LaAlO3 Thin Films on Si Substrate Electrochemical and Solid-State Letters, 7, 11, G33-G36 (2008) |
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12 |
Seong Keun Kim, Gyu-Jin Choi, and Cheol Seong Hwang Controlling the Composition of Doped Materials by ALD: A Case Study for Al-Doped TiO2 Films Electrochemical and Solid-State Letters, 7, 11, G27-G29 (2008) |
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11 |
Yong Cheol Shin, Jaewon Song, Kyung Min Kim, Byung Joon Choi, Seol Choi, Hyun Ju Lee, Gun Hwan Kim, Taeyong Eom, and Cheol Seong Hwang (In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array Applied Physics Letters, 92, 162904 (2008) |
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10 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Cheol Seong Hwang, and Jeong Yeon Won Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1−xGex /Si substrates Journal of Applied Physics, 103, 084117 (2008) |
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9 |
Seung Wook Ryu, Jin Ho Oh, Jong Ho Lee, Byung Joon Choi, Won Kim, Suk Kyoung Hong, Cheol Seong Hwang*, and Hyeong Joon Kim* Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory Applied Physics Letters, 92, 142110 (2008) |
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8 |
Jong Han Jeong, Hui Won Yang, Jin-Seong Park, Jae Kyeong Jeong, Yeon-Gon Mo, Hye Dong Kim, Jaewon Song, and Cheol Seong Hwang Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors Electrochemical and Solid-State Letters, 6, 11, H157-H159 (2008) |
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