46 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Sang Young Lee, Hyung Suk Jung, Miyoung Kim, Cheol Seong Hwang, Gee-Man Kim, Kang Jun Choi, Jae Ho Choi, Jae Hak Jeong Structural Evolution and Electrical Properties of Al-Doped ALD HfO2 Thin Films and PEALD TaCxNy Metal Gate IWDTF 2008, Tokyo Institute of Technology, November 5-7 (2008) |
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45 |
Hyung-Suk Jung, Tae Joo Park, Jeong Hwan Kim, Sang Young Lee, Kwang Duck Na, Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee, Cheol Seong Hwang Systematic Study on Bias Temperature Instability of Various Hf-Based Oxides ; HfO2, (Hf,Al)Oy and (Hf,Zr)Oz IWDTF 2008, Tokyo Institute of Technology, November 5-7 (2008) |
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44 |
Bong Sop Yang, Myung Soo Huh, Jae Won Song, Cheol Seong Hwang, Hyeong Joon Kim Influence of low-pressure process and rapid thermal annealing treatment on the electrical property of Al2O3/SnO2 MIS capacitor 2nd IS-TCO 2008, Hersonissos, Greece, October 22-26 (2008) |
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43 |
Kwang Duk Na, Tae Joo Park, Jaewon Song, Jeong Hwan Kim, Cheol Seong Hwang, Sung Min Yoon, Sang-Hee Ko Park, Chi-Sun Hwang Effect of pre-deposition and post-deposition annealing of HfO2 on ZnO for transparent metal-insulator-semiconductor gate stack 2nd IS-TCO 2008, Hersonissos, Greece, October 22-26 (2008) |
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42 |
Deok-Yong Cho, Jaewon Song, Cheol Seong Hwang, W S Choi, T W Noh Electronic structure of amorphous InGaO3(ZnO)0.3 thin films 2nd IS-TCO 2008, Hersonissos, Greece, October 22-26 (2008) |
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41 |
Jeong Hwan Kim, Tae Joo Park, Kwang Duk Na, Myung soo Huh, Bong Sop Yang, Hyeong Joon Kim and Cheol Seong Hwang Influence of pre-deposition annealing and ozone treatment on the electrical property of HfO2/SnO2 MIS capacitor 2nd IS-TCO 2008, Hersonissos, Greece, October 22-26 (2008) |
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40 |
ÃÖ¼³, ÃÖº´ÁØ, ¾öÅ¿ë, Ȳö¼º Investigation on Ge doping effect in Sb rich SbxTe1-x(x>0.5) thin films deposited by PECVD ´ëÇѱݼÓÀç·áÇÐȸ 2008³âµµ Ãß°èÇмú´ëȸ, ¼ÛµµÄÁº¥½Ã¾Æ, 2008³â 10¿ù 23ÀÏ-24ÀÏ |
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39 |
ÃÖº´ÁØ, ÃÖ¼³, ¾öÅ¿ë, Ȳö¼º, ±èÀ±Á¤, È«¼®°æ Influence of substrates on the growth of Ge2Sb2Te5 films by combined atomic-layer- and chemical-vapor-deposition ´ëÇѱݼÓÀç·áÇÐȸ 2008³âµµ Ãß°èÇмú´ëȸ, ¼ÛµµÄÁº¥½Ã¾Æ, 2008³â 10¿ù 23ÀÏ-24ÀÏ |
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38 |
Ȳö¼º, ÃÖº´ÁØ, ÃÖ¼³, ¾öÅ¿ë, ±èÀ±Á¤, È«¼®°æ Plasma enhanced atomic layer deposition of Ge2Sb2Te5 films and its applications to phase change memory ´ëÇѱݼÓÀç·áÇÐȸ 2008³âµµ Ãß°èÇмú´ëȸ, ¼ÛµµÄÁº¥½Ã¾Æ, 2008³â 10¿ù 23ÀÏ-24ÀÏ |
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37 |
S. K. Kim, K. J. Choi, and C. S. Hwang Dielectric and Electrode Thin Films for Stack-Cell Structured DRAM Capacitors with sub 50-nm Design Rules The 6th Asian Meeting on Ferroelectrics, National Taipei University of Technology, Taipei, Taiwan, August 2-6 (2008) |
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