6 |
Woo Young Park, Cheol Seong Hwang, John D. Baniecki, Masatoshi Ishii, Kazuaki Kurihara, and Kazunori Yamanaka Effects of Sc Doping on the Lattice Structures of Epitaxial (Ba,Sr)TiO3 Thin Films Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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5 |
Sang Woon Lee, Jeong Hwan Han, and Cheol Seong Hwang Enhancement of the Electrical Properties of SrTiO3 Thin Films Grown by Atomic Layer Deposition Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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4 |
¼¹ÎÇÏ, ±è¼º±Ù, ÃÖ±ÔÁø, Ȳö¼º Electrical Properties of HfO2-TiO2 Stack Films Grown by Atomic Layer Deposition Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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3 |
±è°æ¹Î, ÃÖº´ÁØ, ½Å¿ëö, ÃÖ¼³, Ȳö¼º Bipolar Resistance Switching in Pt/TiO2/Pt Structure; A Detailed Switching Mechanism Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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2 |
±è°Çȯ, ÀÌÇöÁÖ, Ȳö¼º Imprinted Hysteresis Loop Analysis of the Ferroelectric Pb(Zr,Ti)O3 Thin Film Capacitor Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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1 |
Invited, Short Cource, Ȳö¼º New Memory Devices and Technologies (FeRAM, MRAM, PcRAM and ReRAM) - Operation Principles and Processes Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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