16 |
±è °æ¹Î, ÃÖ º´ÁØ, ½Å ¿ëö, ÃÖ ¼³, and Ȳ ö¼º Study on resistance switching mechanism in TiO2 thin film for next generation non-volatile memory device application ¼¼¶ó¹ÍÇÐȸ Ãá°è ¿¬±¸¹ßǥȸ, ¼¿ï´ëÇб³ °ø°ú´ëÇÐ, 2008³â 4¿ù 25ÀÏ-26ÀÏ |
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15 |
KIM Gun Hwan, LEE Hyun Ju, and HWANG Cheol Seong Imprinted Hysteresis Loop Analysis of the Ferroelectric Pb(Zr,Ti)O3 Thin Film Capacitor ¼¼¶ó¹ÍÇÐȸ Ãá°è ¿¬±¸¹ßǥȸ, ¼¿ï´ëÇб³ °ø°ú´ëÇÐ, 2008³â 4¿ù 25ÀÏ-26ÀÏ |
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14 |
PARK Tae Joo, KIM Jeong Hwan, JANG Jae Hyuck, NA Kwang Duk1, HWANG Cheol Seong, KIM Gee-Man, KIM Gee-Man, CHOI Jae Ho, CHOI Kang Jun, and JEONG Jae Hak Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma ¼¼¶ó¹ÍÇÐȸ Ãá°è ¿¬±¸¹ßǥȸ, ¼¿ï´ëÇб³ °ø°ú´ëÇÐ, 2008³â 4¿ù 25ÀÏ-26ÀÏ |
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13 |
CHO Deok-Yong, SONG JaeWon, HWANG Cheol Seong, CHOI W S, and NOH T W Electronic structure of amorphous InGaO3(ZnO)0.3 thin films ¼¼¶ó¹ÍÇÐȸ Ãá°è ¿¬±¸¹ßǥȸ, ¼¿ï´ëÇб³ °ø°ú´ëÇÐ, 2008³â 4¿ù 25ÀÏ-26ÀÏ
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12 |
CHOI Byung Joon, OH Seung Hwan, CHOI Seol, EOM Taeyong, SHIN Yong Cheol, KIM Kyung Min, KIM Yoon Jung, PARK Hae Chan, BAEK Tae Sun, HONG Suk Kyoung, YI Kyung-Woo, and HWANG Cheol Seong Reduction in the switching power of phase change memory cell using an ultra-thin TiO2 film ¼¼¶ó¹ÍÇÐȸ Ãá°è ¿¬±¸¹ßǥȸ, ¼¿ï´ëÇб³ °ø°ú´ëÇÐ, 2008³â 4¿ù 25ÀÏ-26ÀÏ |
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11 |
Jaeyeong Heo, Sang Young Lee, Dail Eom, Sanghyun Park, Cheol Seong Hwang, and Hyeong Joon Kim The Enhanced Nucleation Behavior of Atomic-Layer-Deposited Ru Film on Porous Low-k Dielectrics by UV-O3 Treatment Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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10 |
Kwang Duk Na, Tae Joo Park, Jaewon Song, Jeong Hwan Kim, Cheng Jin An, Cheol Seong Hwang, Sung Min Yoon, Sang-Hee Kor Park, and Chi-Sun Hwang, The Fabrication and Electrical Properties of Metal-Insulator-Semiconductor Devices using Atomic Layer Deposited HfO2 and ZnO Thin Films Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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9 |
Seol Choi, Byung Joon Choi, Yong Cheol Shin, Kyung Min Kim, and Cheol Seong Hwang Investigation of the Resistance Switching Phenomena in the Ge0.5Te0.5 Thin Films with Ag Electrode Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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8 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Cheol Seong Hwang, Jong Hoon Kim, Gee-Man Kim, Jae Ho Choi, Kang Joon Choi, and Jae Hak Jeong Improved Electrical Performances of Plasma-Enhanced Atomic Layer Deposited TaCxNy Films by Adopting Ar/H2 Plasma Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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7 |
Jaewon Song, Cheng Jin An, Jeong Hwan Han, and Cheol Seong Hwang Fabrication and Characterization of High-k Gd2O3 MIM Capacitors Using ITO Thin Films as Bottom Electrode Á¦15ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, º¸±¤ Èִнº ÆÄÅ©, 2008³â 2¿ù 20ÀÏ-22ÀÏ |
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