11 |
Y Min, Y. J. Cho, J. Han, W. D. Kim, and C. S. Hwang Characterization and Electrical Properties of Bi1-x-yTixSiyOz(BTSO) Thin Films by Atomic Layer Deposition The 16th International Symposium on Integrated Ferroelectrics, Hotel Hyundai Gyeongju, Bomun Lake Resort, Gyeongju, Korea, April 5-8 (2004), Poster
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10 |
Oh Seong Kwon, Moon Ju Cho and Cheol Seong Hwang, and Jae Hack Jeong Atomic Layer Depositon of SrTiO3 Films Having a High Thickness- and cation - composition Conformality Over a Severe Contact Hole Structure The 16th International Symposium on Integrated Ferroelectrics, Hotel Hyundai Gyeongju, Bomun Lake Resort, Gyeongju, Korea, April 5-8 (2004)
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9 |
S. K. Kim and C. S. Hwang Variations in the Electrical Properties of Atomic-Layer-Deposited Al2O3 Thin Films by Various Pre-Oxidation Treatments of the Si Substrates The 16th International Symposium on Integrated Ferroelectrics, Hotel Hyundai Gyeongju, Bomun Lake Resort, Gyeongju, Korea, April 5-8 (2004)
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8 |
M. Cho, J. Park, H. B. Park, S. W. Lee, C. S. Hwang, J. Jeong, and G. H. Jang High-K Properties of Atomic-Layer-Deposited HfO2 Films Using a Nitrogen-Containing Hf[N(CH3)2]4 Precursor and H2O or O3 Oxidant The 16th International Symposium on Integrated Ferroelectrics, Hotel Hyundai Gyeongju, Bomun Lake Resort, Gyeongju, Korea, April 5-8 (2004)
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7 |
Cheol Seong Hwang High-k capacitor and recent DRAM technology; Scaling of DRAM MOSFETs and Capacitors 16th International Symposium on Integrated Ferroelectrics, Gyeongju, Korea, April 5-9 (2004), Tutorial lecture
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6 |
À̼®¿ì, ¹ÚÀçÈÄ, Á¶¹®ÁÖ, ¹ÚÈ«¹è, ¹ÚÅÂÁÖ, Ȳö¼º Analysis of the nitrogen incorporation by N2O oxidant on HfxAlyOz gate dielectric films grown by chemical vapor deposition using a single molecular precursor Á¦11ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ¹«ÁÖ¸®Á¶Æ® È£ÅÚÆ¼·Ñ, 2004³â 2¿ù 19ÀÏ-20ÀÏ, Poster
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5 |
±è¼º±Ù, Ȳö¼º The study on the electrical properties of Al2O3 thin films on O3 oxidation of Si substrate Á¦11ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ¹«ÁÖ¸®Á¶Æ® È£ÅÚÆ¼·Ñ, 2004³â 2¿ù 19ÀÏ-20ÀÏ, Poster
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4 |
ÃÖº´ÁØ, ±è°æ¹Î, Ȳö¼º Fabrication of the Capacitive Probe and Study on the C-V characterization Á¦11ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ¹«ÁÖ¸®Á¶Æ® È£ÅÚÆ¼·Ñ, 2004³â 2¿ù 19ÀÏ-20ÀÏ
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3 |
Á¶±Ý¼®, ¹Úµ¿¿¬, Ȳö¼º »õ·Î¿î Àü±¸Ã¼¸¦ »ç¿ëÇÑ Pb(Zr, Ti)O3 ¹Ú¸·ÀÇ Àú¿Â À¯±âÈÇÐ ÁõÂø Á¦11ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ¹«ÁÖ¸®Á¶Æ® È£ÅÚÆ¼·Ñ, 2004³â 2¿ù 19ÀÏ-20ÀÏ
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2 |
±Ç¿À¼º, Á¶¹®ÁÖ, Ȳö¼º, Á¤ÀçÇÐ Atomic layer doposition of SrTiO3 films with remote-plasma activated H2O and conventional metal organic precursors Á¦11ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ¹«ÁÖ¸®Á¶Æ® È£ÅÚÆ¼·Ñ, 2004³â 2¿ù 19ÀÏ-20ÀÏ
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