Yu Lin Zou^†, Sunwoo Cheong^†, Jea Min Cho, Néstor Ghenzi, Mingxin Deng, Seongjae Shin, Donghoon Shin, Xiangyuan Li, Tae Won Park, Jiseong Im^* and Cheol Seong Hwang^*

Algorithm-Compatible Single-Transistor Neuron and Al/ZrO2/TiO2/AlOx Memristor Synapse Kernel for Spiking Neural Networks

ACS Applied Materials & Interfaces Article ASAP (2025)

https://doi.org/10.1021/acsami.5c19107

Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim and Cheol Seong Hwang

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, (2025)

Soo Hyung Lee^†, Sungho Kim^†, Janguk Han, Sung Keun Shim, Kunhee Son, Dong Hoon Shin, Hanyong Jeong, Jinwoo Park, Seong Jae Shin, Yoon Ho Jang^* and Cheol Seong Hwang^*

Electrically tunable physical reservoir computing on two-terminal devices 

npj Unconv. Comput. 2, 27 (2025)

DOI: https://doi.org/10.1038/s44335-025-00043-3

Kunhee Son^†, Jea Min Cho^†, Dong Hoon Shin^†, Yeong Rok Kim, Néstor Ghenzi, Sunwoo Cheong, Byeong Su Kim, Jung Kyu Lee, Sungho Kim, Wonho Choi, Soo Hyung Lee, Janguk Han and Cheol Seong Hwang

Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing

Adv. Mater., 38, e14099 (2026)

DOI: 10.1002/adma.202514099

Jonghoon Shin, Haengha Seo, Janguk Han, Tae Kyun Kim, Heewon Paik, Haewon Song, Hansub Yoon, Han Sol Park, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Sanghyup Lee, Seungheon Choi, Dong Hoon Shin, Juneseong Choi and Cheol Seong Hwang

High-performance dynamic random access memory capacitor with an equivalent oxide thickness of 0.31 nm via stepwise cycling in Y-doped Hf_0.5Zr_0.5O₂ thin films

Material Horizons, Advance Article (2025)
DOI: 10.1039/D5MH01563D 

Seo Young Jang^†, Jaewon Ham^†, Yonghee Lee, Sukin Kang, Sahngik Aaron Mun, Jinheon Choi, Juneseong Choi, Seoryong Park, Hyungjeung Kim and Cheol Seong Hwang^*

Wet etching of atomic-layer-deposited amorphous zinc-tin-oxide thin film using oxalic acid

Journal of Materials Chemistry C, (2025)

DOI: 10.1039/D5TC03481G

Janguk Han†, Hyungjun Park†, Yoon Ho Jang, Dong Hoon Shin, Hyun Wook Kim, Wonho Choi, Kyung Seok Woo*, and Cheol Seong Hwang*, 

Cyclic Plasma Treatment for Enhancing the Synaptic Performance of Bulk-Conductive Resistive Switching Memory
ACS Appl. Mater. Interfaces 2025
https://doi.org/10.1021/acsami.5c15918

Mingu Kang†, Joon-Kyu Han†, Kichul Lee†, Jaeseok Jeong, Chanyoung Yoo, Jeong Woo Jeon, Byongwoo Park, Wonho Choi, Cheol Seong Hwang*, and Inkyu Park*

Neuromorphic olfaction with ultralow-power gas sensors and ovonic threshold switch
Sci. Adv. 2025, Vol 11, Issue 39
DOI: 10.1126/sciadv.adv9222

Jinheon Choi, Juneseong Choi, Hyungjeung Kim, Shihyun Kim, Sahngik Aaron Mun, Jaewon Ham, Seoryong Park, Minsub Um, Subin Moon and Cheol Seong Hwang^*

Effect of Al₂O₃ passivation layer and optimization of atomic-layer-deposited Zn–Sn–O and Al–Zn–Sn–O thin-film transistors

Journal of Materials Chemistry C, (2025)

DOI: 10.1039/D5TC02175H

Heewon Paik, Dohyun Kim, Junil Lim, Haengha Seo, Tae Kyun Kim, Jong Hoon Shin, Haewon Song, Hansub Yoon, Dae Seon Kwon, Dong Gun Kim, Jung-Hae Choi, and Cheol Seong Hwang^* 

The leakage current suppression mechanism in a RuO₂/SrTiO₃/Ru capacitor induced by introduction of an ultra-thin GeO₂ interfacial layer at the bottom interface

Journal of Materials Chemistry C, 2025, 13, 21233-21676

Shihyun Kim, Hyungjeung Kim, Jinheon Choi, Sahngik Aaron Mun, Yonghee Lee, Sukin Kang, Juneseong Choi, Jaewon Ham, Seoryong Park, Subin Moon, Minsub Um, and Cheol Seong Hwang^*

Contact resistance reduction in Amorphous In-Ga-Zn-O thin film transistors by interposing an atomic-layer-deposited amorphous Zn-Sn-O interlayer

Journal of Materials Chemistry C, (2025)

DOI: 10.1039/d5tc02972d

Sungho Kim, Dong Hoon Shin, Wonho Choi, Sunwoo Cheong, Sung Keun Shim,

 Soo Hyung Lee, Janguk Han, Yoon Ho Jang, Kunhee Son, Néstor Ghenzi* and Cheol Seong Hwang*

Spatiotemporal Reservoir Computing with a Reconfigurable Multifunctional Memristor Array

Adv. Mater, e10635, (2025), https://doi.org/10.1002/adma.202510635

Hyun Wook Kim^†, Jin Hong Kim^†, Dong Hoon Shin, Min Chung Jung, Tae Won Park, Hyung Jun Park, Joon-Kyu Han, and Cheol Seong Hwang

Neuromorphic Visual Receptive Field Hardware with
Vertically Integrated Indium-Gallium-Zinc-Oxide
Optoelectronic Memristors over Silicon Neuron Transistor

Advanced Materials (2025)

DOI: https://doi.org/10.1002/adma.202513907

Jong-Cheol Lee, Jinheon Choi, Tackhwi Lee, Minsik Kim, Seongmin Ahn, Junghan Lee, Sungho Lee, Jihyun Kho, Yongsoon Choi, Kwangmin Park, and Cheol Seong Hwang*

Identifying the Chemical Structure of Indium-Gallium-Zinc Oxide Thin Films with Oxygen Vacancy Variation

ACS Applied Electronic Materials, (2025), DOI: 10.1021/acsaelm.5c01023

Yoon Ho Jang^†, Janguk Han^†, Soo Hyung Lee^†, and Cheol Seong Hwang*

Next-generation graph computing with electric current-based and quantum-inspired approaches

Han Sol Park, Joong Chan Shin, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Seung Kyu Ryoo, In Soo Lee, Suk Hyun Lee, Hyunwoo Nam, Cheol Seong Hwang*

Enhancing ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

Journal of Materiomics, 11, 101109 (2025)

Seong Jae Shin, Hani Kim, Seungyong Byun, Jonghoon Shin, Jinwoo Choi, Suk Hyun Lee, Kyung Do Kim, Jae Hee Song, Dong Hoon Shin, Soo Hyung Lee, In Soo Lee, Hyunwoo Nam, Cheol Seong Hwang^*

Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf_0.5Zr_0.5O₂ thin films

Journal of Materiomics, 11, 101101 (2025)  

Kyung Do Kim⁺, Min Kyu Yeom⁺, Han Sol Park, Gwangsik Jeon and Cheol Seong Hwang

Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor

Advanced Materials (2025)

DOI: https://doi.org/10.1002/adma.202509088