30 |
Heewon Paik, Dohyun Kim, Junil Lim, Haengha Seo, Tae Kyun Kim, Jong Hoon Shin, Haewon Song, Hansub Yoon, Dae Seon Kwon, Dong Gun Kim, Jung-Hae Choi, and Cheol Seong Hwang* The leakage current suppression mechanism in a RuO2/SrTiO3/Ru capacitor induced by introduction of an ultra-thin GeO2 interfacial layer at the bottom interface Journal of Materials Chemistry C (2025) DOI: 10.1039/d5tc02736e
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29 |
Shihyun Kim, Hyungjeung Kim, Jinheon Choi, Sahngik Aaron Mun, Yonghee Lee, Sukin Kang, Juneseong Choi, Jaewon Ham, Seoryong Park, Subin Moon, Minsub Um, and Cheol Seong Hwang* Contact resistance reduction in Amorphous In-Ga-Zn-O thin film transistors by interposing an atomic-layer-deposited amorphous Zn-Sn-O interlayer Journal of Materials Chemistry C, (2025) DOI: 10.1039/d5tc02972d |
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28 |
Sungho Kim, Dong Hoon Shin, Wonho Choi, Sunwoo Cheong, Sung Keun Shim, Soo Hyung Lee, Janguk Han, Yoon Ho Jang, Kunhee Son, Néstor Ghenzi* and Cheol Seong Hwang* Spatiotemporal Reservoir Computing with a Reconfigurable Multifunctional Memristor Array Adv. Mater, e10635, (2025), https://doi.org/10.1002/adma.202510635 |
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27 |
Hyun Wook Kim¢Ó, Jin Hong Kim¢Ó, Dong Hoon Shin, Min Chung Jung, Tae Won Park, Hyung Jun Park, Joon-Kyu Han, and Cheol Seong Hwang Neuromorphic Visual Receptive Field Hardware with
Vertically Integrated Indium-Gallium-Zinc-Oxide
Optoelectronic Memristors over Silicon Neuron Transistor Advanced Materials (2025) DOI: https://doi.org/10.1002/adma.202513907 |
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26 |
Jong-Cheol Lee, Jinheon Choi, Tackhwi Lee, Minsik Kim, Seongmin Ahn, Junghan Lee, Sungho Lee, Jihyun Kho, Yongsoon Choi, Kwangmin Park, and Cheol Seong Hwang* Identifying the Chemical Structure of Indium-Gallium-Zinc Oxide Thin Films with Oxygen Vacancy Variation ACS Applied Electronic Materials, (2025), DOI: 10.1021/acsaelm.5c01023 |
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25 |
Yoon Ho Jang¢Ó, Janguk Han¢Ó, Soo Hyung Lee¢Ó, and Cheol Seong Hwang* Next-generation graph computing with electric current-based and quantum-inspired approaches Nature Communications, 16, 8029 (2025) |
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24 |
Han Sol Park, Joong Chan Shin, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Seung Kyu Ryoo, In Soo Lee, Suk Hyun Lee, Hyunwoo Nam, Cheol Seong Hwang* Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes Journal of Materiomics, 11, 101109 (2025) |
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23 |
Seong Jae Shin, Hani Kim, Seungyong Byun, Jonghoon Shin, Jinwoo Choi, Suk Hyun Lee, Kyung Do Kim, Jae Hee Song, Dong Hoon Shin, Soo Hyung Lee, In Soo Lee, Hyunwoo Nam, Cheol Seong Hwang* Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films Journal of Materiomics, 11, 101101 (2025) |
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22 |
Kyung Do Kim+, Min Kyu Yeom+, Han Sol Park, Gwangsik Jeon and Cheol Seong Hwang Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor Advanced Materials (2025) DOI: https://doi.org/10.1002/adma.202509088
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21 |
Jong-Ho Lee, Jae-Joon Kim & Cheol Seong Hwang Semiconductor-related research and education at Seoul National University Nature Reviews Electrical Engineering, (2025), https://doi.org/10.1038/s44287-025-00194-2 |
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20 |
Hyun Young Kim, Néstor Ghenzi, Hyungjun Park, Dong Hoon Shin, Dong Yun Kim,Tae Won Park, Jea Min Cho, Taegyun Park * and Cheol Seong Hwang * Dual-mode switching of a bidirectional self-rectifying Ti/HfO2/Ti device for bipolar and electronic complementary resistive switching
Nanoscale Horizons (2025) DOI: 10.1039/d5nh00256g |
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19 |
Yu Lin Zou¢Ó, Xiang Yuan Li¢Ó, Néstor Ghenzi, Taegyun Park, Dong Hoon Shin, Seong Jae Shin, Jea Min Cho, Tae Won Park, Sunwoo Cheong, Sahngik Aaron Mun, and Cheol Seong Hwang A Study on the Synaptic Behavior of Al/ZrO2/TiO2/Al Electronic Bipolar Resistance Switching Memristor ACS Applied Materials & Interfaces (2025) doi:10.1021/acsami.5c09911 |
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18 |
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Suk Hyun Lee, Wonho Choi, Yunjae Kim, Jung-Hae Choi, Tianjiao Xin, Yan Cheng and Cheol Seong Hwang* Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors Nature Communications, 2025, 16, 7425, DOI: https://doi.org/10.1038/s41467-025-62904-6 |
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17 |
Tae Kyun Kim, Haengha Seo, Junil Lim, Heewon Paik, Jonghoon Shin, Haewon Song, Dae Seon Kwon* and Cheol Seong Hwang* Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors Journal of Materials Chemistry C (2025) |
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16 |
Jae Hee Song, Kyung Do Kim, Jonghoon Shin, Seong Jae Shin, Suk Hyun Lee, Seung Yong Byun, In Soo Lee, Han Sol Park, Yeon Jae Kim , Hyun Woo Nam and Cheol Seong Hwang* Ferroelectric and field-induced ferroelectric phase formation in atomic-layer-deposited ZrO2 thin films with TiN electrodes Journal of Materials Chemistry C, 2025, 13, 14751 - 14766, DOI: 10.1039/D5TC01449B |
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15 |
Soon Joo Yoon, Jeong Woo Jeon, Junho Lee, Jin Tae Park, Chanwoo Lee, Ki Jun Yu, Hagyoul Bae, Kihyun Kim, Keun Heo, Cheol Seong Hwang, Deok-Yong Cho, Taehun Lee*, Yoon Kyeung Lee* Defect Formation and Electrical Transformation in SiO2 Thin Films via Ti-Induced Interdiffusion Acta Materialia (2025) |
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14 |
Heewon Paik, Junil Lim, Haengha Seo, Tae Kyun Kim, Jonghoon Shin, Haewon Song, Dong Gun Kim, Woongkyu Lee, Dae Seon Kwon* and Cheol Seong Hwang* Enhanced Crystallization and Dielectric Properties of Atomic Layer Deposited SrTiO3 Thin Films on Ru Electrode by Inserting GeO2 Interfacial Layer Materials Horizons, 2025,12, 7305-7317 |
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13 |
Dohyun Kim, Kun Hee Ye, Taeyoung Jeong, Seungjae Yoon, Yunjae Kim, Cheol Seong Hwang* and Jung-Hae Choi* Polytype family representations of octahedrally coordinated adaptive structures in Ta2O5: energetic and dynamic stability from first principles Phys. Chem. Chem. Phys., 27, 14082 - 14094 (2025), DOI: 10.1039/d5cp01821h |
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12 |
Sung Keun Shim, Joon-Kyu Han, Janguk Han, Soo Hyung Lee, Dong Hoon Shin, Sunwoo Cheong, Sungho Kim, Hanyoung Jeong, Yoon Ho Jang*, and Cheol Seong Hwang* Advanced Time Series Data Processing Using Various Memristor-Integrated Devices Advanced Materials Technologies, (2025), DOI: 10.1002/admt.202500838 |
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11 |
Yonghee Lee, Seung-Yoon Lee, Jinheon Choi, Néstor Ghenzi, Joon-Kyu Han*, and Cheol Seong Hwang* Heterogeneous Capacitor-less Two-transistor Dynamic Random Access Memory Cell with Long Retention Time and High Sensing Current Supporting 5-Bit Multilevel Operation Phys. Status Solidi RRL, (2025), DOI: 10.1002/pssr.202500131 |
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