| 23 |
Hyeon Woo Park, Minsik Oh, In Soo Lee, Seungyong Byun, Yoon Ho Jang, Yong Bin Lee, Beom Yong Kim, Suk Hyun Lee, Seung Kyu Ryoo, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, and Cheol Seong Hwang* Double S-Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3-Hf0.5Zr0.5O2-Al2O3 Triple-Layer Structure Adv. Funct. Mater. 2206637, (2022) |
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| 22 |
Seung Soo Kim†, Soo Kyeom Yong†, Jin Myung Choi, Tae Won Park, Hyun Young Kim, Hae Jin Kim*, and Cheol Seong Hwang* Fabrication of a Hole-Type Vertical Resistive-Switching Random-Access Array and Intercell Interference Induced by Lateral Charge Spreading Advanced Electronic Materials, 2022 |
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| 21 |
Seung Kyu Ryoo†, Beom Yong Kim†, Yong Bin Lee, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, In Soo Lee, Seung Yong Byun, Doo Sup Shim, Jae Hoon Lee, Ha Ni Kim, Kyung Do Kim, and Cheol Seong Hwang* Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere Journal of Materials Chemistry C (2023)
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| 20 |
Xiang yuan li, Tae Hyung Park, Seung Dam Hyun, and Cheol Seong Hwang* Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer ACS Appl. Electron. Mater., 2022, 4, 5351−5360 |
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| 19 |
Chanyoung Yoo, Jeong Woo Jeon, Seungjae Yoon, Yan Cheng, Gyuseung Han, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Woohyun Kim, Yonghui Zheng, Jongho Lee, Junku Ahn, Sunglae Cho, Scott B. Clendenning, Ilya V. Karpov, Yoon Kyung Lee, Jung-Hae Choi, and Cheol Seong Hwang* Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory Advanced Materials, 2207143 (2022) |
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| 18 |
Kyung Seok Woo†, Jaehyun Kim†, Janguk Han, Woohyun Kim, Yoon Ho Jang & Cheol Seong Hwang Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors Nature Communications, 13, 5762 (2022) |
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| 17 |
Hyo Cheon Woo, Jihun Kim, Sunwoo Lee, Hae Jin Kim, and Cheol Seong Hwang* Stacked One-Selector-One-Resistive Memory Crossbar Array With High Nonlinearity and On-Current Density for the Neuromorphic Applications Adv. Electron. Mater. 2022, 2200656 |
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| 16 |
Seung Kyu Ryoo†, Kyung Do Kim†, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Yoon Ho Jang, Min Hyuk Park, and Cheol Seong Hwang* Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm Adv. Electron. Mater., 2200726 (2022) |
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| 15 |
Juseong Park, Jungwoo Choi, Gwangmin Kim, Geunyoung Kim, Gil Seop Kim, Hanchan Song, Yeong Seok Kim, Younghyun Lee, Hakseung Rhee, Hyuck Mo Lee, Cheol Seong Hwang* and Kyung Min Kim* Modified Dynamic Physical Model of Valence Change Mechanism Memristors ACS Appl. Mater. Interfaces (2022) |
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| 14 |
Gyuseung Han, In Won Yeu, Kun Hee Ye, Seungjae Yoon, Taeyoung Jeong, Seung-Cheol Lee, Cheol Seong Hwang and Jung-Hae Choi* Temperature-dependent bandgap of (In,Ga)As via P5Grand: A Python Package for Property Prediction of Pseudobinary systems using Grand canonical ensemble Chemical Physics Letters, 804, 139887 (2022) |
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| 13 |
Yong Bin Lee, Beom Yong Kim, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Min Hyuk Park, Cheol Seong Hwang* Oxygen-Scavenging Effects of Added Ti Layer in the TiN Gate of Metal-Ferroelectric-Insulator-Semiconductor Capacitor with Al-doped HfO2 Ferroelectric Film Advanced Electronic Materials, 2200310 (2022) |
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| 12 |
Seung Soo Kim, Soo Kyeom Yong, Whayoung Kim, Sukin Kang, Hyeon Woo Park, Kyung Jean Yoon, Dong Sun Sheen, Seho Lee, and Cheol Seong Hwang* Review of Semiconductor Flash Memory Devices for Material and Process Issues Advanced Materials, 2200659 (2022) DOI:10.1002/adma.202200659 |
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| 11 |
Dae Seon Kwon, Tae Kyun Kim, Junil Lim, Haengha Seo, Heewon Paik, and Cheol Seong Hwang* Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer ACS Applied Electronic Materials, 4, 4, 2005-2014 (2022) |
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| 10 |
Bo Wen Wang, Seungsoo Kim, Haewon Song, Haengha Seo, Xiangyuan Li, Jin Myung Choi, Jinwoo Choi, Jonghoon Shin and Cheol Seong Hwang Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition J. Mater. Chem. C, 2022, Advance Article (2022) DOI: 10.1039/d2tc00595f |
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| 9 |
Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung-Hae Choi and Cheol Seong Hwang The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors Advanced Electronic Materials, 8, 7 (2022) |
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| 8 |
Woon Hyung Cheong, Jae Bum Jeon, Jae Hyun In, Geunyoung Kim, Hanchan Song, Janho An, Juseong Park, Young Seok Kim, Cheol Seong Hwang,* and Kyung Min Kim* Demonstration of Neuromodulation-inspired Stashing System for Energy-efficient Learning of Spiking Neural Network using a Self-Rectifying Memristor Array Adv. Funct. Mater. 2022, 2200337 |
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| 7 |
Uwe Schroeder, Min Hyuk Park, Thomas Mikolajick & Cheol Seong Hwang The fundamentals and applications of ferroelectric HfO2 Nature Review Materials, doi: 10.1038/s41578-022-00431-2 (2022) |
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| 6 |
Gyuseung Han, In Won Yeu, Kun Hee Ye, Cheol Seong Hwang, and Jung-Hae Choi* Atomistic prediction on the composition- and configuration-dependent bandgap of Ga(As,Sb) using cluster expansion and ab initio thermodynamics Materials Science and Engineering B, 280 115713 (2022) |
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| 5 |
Taegyun Park, Yeong Rok Kim, Jihun Kim, Jinwon Lee, and Cheol Seong Hwang* Reliable Domain-Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors Advanced Intelligent Systems, 2100267 (2022) |
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| 4 |
Jihun Kim, Hyo Cheon Woo, Sunwoo Lee, Byeol Jun Lee, Taegyun Park, and Cheol Seong Hwang* Training method for accurate Off-Chip training of one-selector-one-resistor crossbar array with nonlinearity and wire resistance Advanced Intelligent Systems, 2100256 (2022) |
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