Gyuseung Han, In Won Yeu, Seung Cheol Lee, Cheol Seong Hwang, and Jung-Hae Choi

Phase Diagram of Ga(As,Sb) and (In,Ga)As by Cluster Expansion and DFT Calculations

ASIAN-21, KAIST, Daejeon, Korea, Oct 29-31 (2018), Poster

In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi

Vibrational effects on the surface energy of III-V compound semiconductors using ab-initio thermodynamics

ASIAN-21, KAIST, Daejeon, Korea, Oct 29-31 (2018), Poster

Soon Hyung Cha, Cheol Hyun An, Sang Hyeon Kim, Dae Seon Kwon, Seong Tak Cho, and Cheol Seong Hwang

Atomic Layer Deposition of ZrO₂/Al₂O₃/TiO₂ thin films with high dielectric constant on TiN substrates for DRAM capacitors

E-MRS 2018, Warsaw (Poland), Sep 17-20 (2018), Poster

Woohyun Kim, Chanyoung Yoo, Eui-sang Park, Yoon Kyeung Lee, Jeong Woo Jeon, Manick Ha, and Cheol Seong Hwang

Atomic Layer Deposition of GeSe films with Discrete Feeding Method for Ovonic Threshold Switch

E-MRS 2018, Warsaw (Poland), Sep 17-20 (2018), Poster

Chanyoung Yoo, Eui-sang Park, Yoon Kyeung Lee, Woohyun Kim, Jeong Woo Jeon, Manick Ha, and Cheol Seong Hwang

Atomic Layer Deposition of TiTe₂ Thin Films for Ti-Sb-Te Phase Change Memory Application

E-MRS 2018, Warsaw (Poland), Sep 17-20 (2018), Poster

In-Hwan Baek, Jung Joon Pyeon, Taek-Mo Chung, Jeong Hwan Han, Cheol Seong Hwang, and Seong Keun Kim

Atomic Layer Deposited Quaternary InZnSnO Thin Films for Emerging Electronic Devices

International Meeting on Information Display, Busan, South Korea, Aug 28-31 (2018), Oral

In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi

Surface phase diagram of GaAs(001) considering the vibrational thermal energy by ab-initio calculation

IUMRS-ICEM 2018, Daejeon, Korea, Aug 19-24 (2018), Oral

Yong Bin Lee, J.H.Roh, H.W.Park, K.D.Kim, T.H.Moon, Y.H.Lee, S.D.Hyun, B.S.Kim, B.Y.Kim, H.H.Kim, and C.S.Hwang

Internal Oxide Engineering of Hafnium Zirconium Oxide-Based Ferroelectric Capacitors for Ferroelectric and Negative Capacitance Field Effect Transistor Application

12th Japan-Korea Conference on Ferroelectrics, Nara, Japan, August 5 - August 8 (2018), Poster

Jangho Roh, H.W.Park, Y.B.Lee, S.D.Hyun, K.D.Kim, T.H.Moon, Y.H.Lee, B.S.Kim, B.Y.Kim, H.H.Kim, and C.S.Hwang

Ferroelectric Characteristics of Hf0.5Zr0.5O2-based Metal-Ferroelectric-Insulator-Semiconductor Capacitors for steep-slope transistor

12th Japan-Korea Conference on Ferroelectrics, Nara, Japan, August 5 - August 8 (2018), Poster