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18

Yong Bin Lee, Hyeon Woo Park, Jang Ho Noh, Han Joon Kim, Keum Do Kim, Tae Hwan Moon, Young Hwan Lee, Seung Dam Hyun, Baek Su Kim, and Cheol Seong Hwang

Influence of Charge Injection through Interfacial Layer for the Ferroelectric Field Effect Transistor using Hf0.5Zr0.5O2 Thin Films 

High-k oxides by ALD, Poland, March 7-10 (2018), Poster

17

Young Jae Kwon, Jung Ho Yoon, Yu Min Kim, Dae Eun Kwon, Tae Hyung Park, Hae Jin Kim, Kyung Seok Woo, Tae Gyun Park and Cheol Seong Hwang

The effect of Au nanodots geometry and location in the Pt/Ta2O5/HfO2-x/TiN structure

Á¦ 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Oral 

   
16

Tae Hyung Park, Hae Jin Kim, Soo Gil Kim, Byung Joon Choi and Cheol Seong Hwang

Roles of Conducting Filament and Non-Filament Regions in the Ta2O5 Resistive-Switching Memory for Switching Reliability

Á¦ 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Oral

15

Dae Eun Kwon, Jung Ho Yoon, Tae Hyung Park, Yumin Kim, Young Jae Kwon, Hae Jin Kim and Cheol Seong Hwang

Selector for bipolar resistive switching material having current saturation functionality with Pt/Ti/TiO2/HfO2/TiN device

Á¦ 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Oral

14

Hae Jin Kim, Tae Hyung Park, Young Jae Kwon, Dae Eun Kwon, Yu Min Kim, Tae Jung Ha, Soo Gil Kim, and Cheol Seong Hwang*

Fabrication of Cu cone structure embedded CBRAM array for inducing field concentration effect & material limited switching effect

Á¦25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Oral

13

Soon Hyung Cha, Cheol Hyun An, Sang Hyeon Kim, Dong gun Kim, Dae Seon Kwon, Seong Tak Cho and Cheol Seong Hwang

MIM capacitor based on ZrO2/Al2O3/TiO2 dielectric for DRAM devices

Á¦25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, poster

12

Seong Tak Cho, Cheol Hyun An, Sang Hyeon Kim, Dong gun Kim, Dae Seon Kwon, Soon Hyung Cha, and Cheol Seong Hwang

MIM capacitor based on ZrO2/Y2O3/ZrO2 dielectric for DRAM devices

Á¦25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Poster

11

Cheol Hyun An, Sang Hyeon Kim, Dae Seon Kwon, Soon Hyung Cha, Seong Tak Cho and Cheol Seong Hwang

Atomic layer deposition of Ru thin film with enhanced growth rate on Ta2O5/Si substrate using RuO4 precursor and H2 gas

Á¦25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Poster

10

Dae Seon Kwon, Cheol Hyun An, Sang Hyeon Kim, Hoju Song, Seong Tak Cho, Soon Hyung Cha, Taishi Furukawa, Teppei Hayakawa, Kazuhisa Kawano and Cheol Seong Hwang

Atomic layer deposition of Ru thin films using 'Rudense' as Ru precursor

Á¦25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Poster

9

Yumin Kim, Young Jae Kwon, Dae Eun Kwon, Kyung Jean Yoon, Jung Ho Yoon, Sijung Yoo, Hae Jin Kim, Tae Hyung Park, Jin-Woo Han, Kyung Min Kim, and Cheol Seong Hwang

Nociceptive memristor

Á¦25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿ø ÇÏÀÌ¿ø¸®Á¶Æ®, 2018³â 2¿ù 5ÀÏ ~ 7ÀÏ, Oral