29 |
Yu Jin Kim, Min Hyuk Park, Woojin Jeon, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer Journal of Applied Physics, 22, 118, 224105 (2015) |
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28 |
Hyun Soo Jin¢Ó, Young Jin Cho¢Ó, Tae Jun Seok, Dae Hyun Kim, Dae Woong Kim, Sang-Moon Lee, Jong-Bong Park, Dong-Jin Yun, Seong Keun Kim, Cheol Seong Hwang*, Tae Joo Park* Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing Applied Surface Science, 357, 2306-2312 (2015) |
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27 |
Shusuke Kasamatsu, Satoshi Watanabe, Cheol Seong Hwang, and Seungwu Han Emergence of Negative Capacitance in Multidomain Ferroelectric–Paraelectric Nanocapacitors at Finite Bias Advanced Materials, 2, 28, 335-340 (2015) |
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26 |
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun and Cheol Seong Hwang Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling Applied Physics Letters, 19, 107, 192907 (2015) |
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25 |
Tae Hyung Park, Seul Ji Song,, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28nm-diameter memory cell Scientific Reports, 5, 15965 (2015) |
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24 |
An Quan Jiang, Xiang Jian Meng, David Wei Zhang, Min Hyuk Park, Sijung Yoo, Yu Jin Kim, James F. Scott, and Cheol Seong Hwang Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong Scientific Reports, 5, 14618 (2015) |
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23 |
Li Wei Zhou, Xing Long Shao, Xiang Yuan Li, Hao Jiang, Ran Chen, Kyung Jean Yoon, Hae Jin Kim, Kailiang Zhang, Jinshi Zhao, and Cheol Seong Hwang Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure Applied Physics Letters, 7, 107, 072901 (2015) |
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22 |
Jung Ho Yoon, Kyung Min Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park, Young Jae Kwon, Xinglong Shao, and Cheol Seong Hwang Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash Advanced Materials, 25, 27, 3811-3816 (2015) |
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21 |
Woongkyu Lee, Sijung Yoo, Woojin Jeon, Yeon Woo Yoo, Cheol Hyun An, Min Jung Chung, Han Joon Kim, SangWoon Lee, and Cheol Seong Hwang Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer Thin Solid Films, 589, 723-729 (2015) |
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20 |
Woojin Jeon, Sang Ho Rha, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, Sang Hyun Kim, Cheol Jin Cho, Seong Keun Kim, and Cheol Seong Hwang Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage
Physica Status Solidi R.R.L., 7, 9, 410-413 (2015) |
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19 |
Donghee Son, Jongha Lee, Dong Jun Lee, Roozbeh Ghaffari, Sumin Yun, Seok Joo Kim, Ji Eun Lee, Hye Rim Cho, Soonho Yoon, Shixuan Yang, Cheol Seong Hwang, Sangwook Nam, Nanshu Lu, Taeghwan Hyeon, Seung Hong Choi, and Dae-Hyeong Kim Bioresorbable Electronic Stent Integrated with Therapeutic Nanoparticles for Endovascular Diseases ACS Nano, 6, 9, 5937-5946 (2015) |
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18 |
Kanghoon Yim, Youn Yong, Joohee Lee, Kyuhyun Lee, Ho-Hyun Nahm, Jiho Yoo, Chanhee Lee, Cheol Seong Hwang and Seungwu Han Novel high-¥ê dielectrics for next-generation electronic devices screened by automated ab initio calculations NPG Asia Materials, 7 (2015) |
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17 |
Xing Long Shao, Li Wei Zhou, Kyung Jean Yoon, Hao Jiang, Jin Shi Zhao, Kai Liang Zhang, Sijung Yoo, and Cheol Seong Hwang Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory Nanoscale, 7, 11063-11074 (2015) |
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16 |
Jong Hoon Park, Jangwon Seo, Sangman Park, Seong Sik Shin, Young Chan Kim, Nam Joong Jeon, Hee-Won Shin, Tae Kyu Ahn, Jun Hong Noh, Sung Cheol Yoon, Cheol Seong Hwang, and Sang Il Seok Efficient CH3 NH3 PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition Advanced Materials, 27, 27, 4013-4019 (2015) |
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15 |
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun and Cheol Seong Hwang Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films Journal of Materials and Chemistry C, 3, 6291-6300 (2015) |
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14 |
Hyungkwang Lim, Vladimir Kornijcuk, Jun Yeong Seok, Seong Keun Kim, Inho Kim, Cheol Seong Hwang, and Doo Seok Jeong Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study Scientific Reports, 5, 9776 (2015) |
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13 |
Woongkyu Lee, Woojin Jeon, Cheol Hyun An, Min Jung Chung, Han Joon Kim, Taeyong Eom, Sheby Mary George, Bo Keun Park, Jeong Hwan Han, Chang Gyoun Kim, Taek-Mo Chung, Sang Woon Lee, and Cheol Seong Hwang Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor Chemistry of Materials, 11, 27, 3881-3891 (2015) |
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12 |
Cheol Seong Hwang Prospective of Semiconductor Memory Devices: from Memory System to Materials
Advanced Electronic Materials, 6, 1, 1400056 (2015)
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11 |
Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer Physica Status Solidi R.R.L., 6, 9, 362-365 (2015) |
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10 |
Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo-Sung Kim, Iain Buchanan, Sergei Ivanov, Manchao Xiao, and Cheol Seong Hwang Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application Chemistry of Materials, 10, 27, 3707-3713 (2015) |
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