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Conference


11

Sijung Yoo, Taeyong Eom, Taehong Gwon, and Cheol Seong Hwang

Bipolar Resistive Switching of Ge2Sb2Tes and Ge2Sb2Te7 Thin Films without Involving Obvious Phase Change

Á¦ 21ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, poster

10

Dae Eun Kwon, Jong Ho Lee , Jung Ho Yoon, Seul J i Song, Kyung Jean Yoon, Tae Hyung Park, Tae Joo Park and Cheol Seong Hwang

S-Doped Ti02 as a Selection Diode for ReRAM

Á¦ 21ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

9

Jung Ho Yoon, Seul Ji Song, II.Hyuk Yoo, Jun Yeong Seok, Kyung Jean Yoon, Tae Eun Kwon, Tae Hyung Park, and Cheol Seong Hwang

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in Pt/Ta20s/Hf02-x/TiN Structure

Á¦ 21ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

8

Kyung Jean Yoon, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Tae Hyung Park, Dae Eun Kwon, Cheol Seong Hwang

Evolution of the Shape of the Conducting Channel in Complementary Resistive Switching Transition Metal Oxides

Á¦ 21ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

7

Taehyung Park, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Dae Eun Kwon, and Cheol Seong Hwang

Identification of Controlling Parameters on Self-Compliance Resistive Switching in a Pt/TaOx/Ta205/Pt Structure

Á¦ 21 Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

6

Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Tae Hwan Moon, and Cheol Seong Hwang

Stabilization of Negative Capacitance in Ferroelectric Thin Films

Á¦ 21 Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

5

Woojin Jeon, Woongkyu Lee, Yeon Woo Yoo, Cheol Hyun An,
and Cheol Seong Hwang

Evaluating the Change in Electrical Conduction Mechanism and Dielectric Prope¥ðies of Ti02 Thin-Film by AI Doping

Á¦ 21 Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

4

Taeyong Eom,Taehong Gwon, SijungYoo. Mo¥òSung Kim, lain Buchanan, Manchao Xiao and Cheol Seong Hwang

Kinetic Analysis of Atomic Layer Deposition Process of (GeTe2)(1-X)(Sb2Te3)X Layers for Phase Change Memories

Á¦ 21 Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

3

Taehong Gwon, Taeyong Eom, SijungYoo, Moo-Sung Kim, lain Buchanan, Manchao Xiao, and Cheol Seong Hwang

A New Chemical Route for Vapor Phase Deposition of GeTe for Phase Change Memory

Á¦ 21 Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral

2

Min Hyuk Park. Han Joon Kim. Yu Jin Kim. Woongkyu Lee. Taehwan Moon. and Cheol Seong Hwang

Evolution of Phases and Ferroelectric Properties of Thin Hf0.5Zr0.5O2 Films According to the Thickness and Annealing Temperature

Á¦ 21 Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014³â 2¿ù 24ÀÏ-26ÀÏ, oral