Seol Choi, Byung Joon Choi, Taeyoung Eom and Cheol Seong Hwang

Investigation on the Growth Behavior of Ge Doped Sb_xTe_y Thin Films Deposited by a Plasma-enhanced CVD

MRS spring meeting, San Fransisco, CA April 13-17 (2009), Poster

Hyung-Suk Jung, Tae Joo Park, Jeong Hwan Kim, Sang Young Lee, Joohwi Lee, Him Chan Oh, Kwang Duck Na, Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee, Cheol Seong Hwang

Systematic Study on Bias Temperature Instability of Various High-k Gate Dielectrics ; HfO₂, HfZr_xO_y and ZrO₂

IRPS, Montreal, QC, Canada, April 26-30 (2009)

Seung Wook Ryu, Jong Ho Lee, Yong Bae Ahn, Choon Hwan Kim, Cheol Seong Hwang, and Hyeong Joon Kim

Dependency of Threshold Switching on Density of Localized states of Ge₂Sb₂Te₅ Thin films for Phase Change Random Access Memory

제 16회 한국반도체학술대회, 대전컨벤션센터, February 18~20 (2009), Poster

Jeayeong Heo, Sanghyun Park, Sang Young Lee, Dail Eom, Cheol Seong Hwang, and Hyeong Joon Kim

The Diffusion barrier properties of Ruthenium to Copper

제 16회 한국반도체학술대회, 대전컨벤션센터, February 18~20 (2009), Poster

Taeyong Eom, Byung Joon Choi, Seol Choi, Tae Joo Park, Jeong Hwan Kim, Minha Seo, and Cheol Seong Hwang

Capacitive memory characteristics using Ge₂Sb₂Te₅ with Al₂O₃ blocking oxide

제 16회 한국반도체학술대회, 대전컨벤션센터, February 18~20 (2009), Poster

Sang Woon Lee, Jeong Hwan Han, and Cheol Seong Hwang

Improved Growth Behaviors of SrTiO₃ Thin Films Using the Optimized Seed Layer deposited by Atomic Layer Deposition

제 16회 한국반도체학술대회, 대전컨벤션센터, February 18~20 (2009), Poster

이상영, 최규진, 김경민, 나광덕, 서민하, 이상운, 한정환, 박우영, 황철성

ALD 방법으로 증착한 TiO₂/Ru 박막을 이용한 박막형 다층 세라믹 커패시터(MLCC)의 제조 및 특성

제 16회 한국반도체학술대회, 대전컨벤션센터, February 18~20 (2009), Poster

Jeong Hwan Han, Sang Woon Lee, Gyu Jin Choi, Sang Young Lee, Cheol Seong Hwang, Julien Gatineau, and Christian Dussarrat

Pulsed-Chemical vapor deposition of Ruthenium thin films Using RuO₄ precursor for the DRAM capacitor electrode

제 16회 한국반도체학술대회, 대전컨벤션센터, February 18~20 (2009), Oral

Byung Joon Choi, Seol Choi, Taeyong Eom, Seung Hwan Oh, Kyung-Woo Yi, Cheol Seong Hwang, Yoon Jung Kim, and Suk Kyoung Hong

The role of TiO₂ interfacial layer for the operation of PCRAM fabricated by using the chemical vapor deposited Ge₂Sb₂Te₅ films

제 16회 한국반도체학술대회, 대전컨벤션센터, February 18~20 (2009), Oral