30 |
Sang Woon Lee, Jeong Hwan Han and Cheol Seong Hwang Improved Growth Characteristics of Strontium Titanate Thin Film Grown By Atomic Layer Deposition using Sr(iPr3Cp)2 ALD 2009, Monterey, California, July 19-22 (2009), Oral
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29 |
Gyu-Jin Choi, Seong Keun Kim, Sang Young Lee, Woo Young Park, Minha Seo, Byung Joon Choi, and Cheol Seong Hwang Impact of Ru buffer layer growth on TiN electrode on TiO2 dielectric films grown by atomic layer deposition for capacitor applications ALD 2009, Monterey, California, July 19-22 (2009), Oral
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28 |
Jeong Hwan Han, Sang Woon Lee, Gyu-Jin Choi and Cheol Seong Hwang Pulsed chemical vapor deposition of Ruthenium dioxide thin films Using RuO4 precursor for the DRAM capacitor electrode ALD 2009, Monterey, California, July 19-22 (2009), Poster
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27 |
Jeong Hwan Kim, Tae Joo Park, Jae Hyuck Jang, Un Ki Kim, Hyung Suk Jung, Sang Young Lee, Minha Seo, Joohwi Lee, Him Chan Oh, and Cheol Seong Hwang Electrical properties and chemical analysis of Hafnium oxide thin films deposited by ALD at very low temperature (¡Â100oC) ALD 2009, Monterey, California, July 19-22 (2009), Poster
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26 |
Byung Joon Choi, Taeyong Eom, Seol Choi, and Cheol Seong Hwang Plasma enhanced atomic layer deposition of GeSbTe films using NH3 reduction gas ALD 2009, Monterey, California, July 19-22 (2009), Oral
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25 |
H. Lee, M. Park and C. Hwang The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition 215th ECS meeting, San Francisco, CA, May 24-29 (2009), Poster
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24 |
M. Park, H. Lee, G. Kim and C. Hwang The Effect of Periodic Relaxation on the Growth Behavior and Electrical Properties of Atomic Layer Deposited PbTiO3 Thin film 215th ECS meeting, San Francisco, CA, May 24-29 (2009), Poster
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23 |
J. Han, S. Lee, G. Choi, S. Lee, C. Hwang, C. Dussarrat and J. Gatineau Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode 215th ECS meeting, San Francisco, CA, May 24-29 (2009), Oral
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22 |
S. Lee, J. Han and C. Hwang Improved Growth Behaviors of SrTiO3 Thin films Using the Optimized Seed Layer deposited by Atomic Layer Deposition 215th ECS meeting, San Francisco, CA, May 24-29 (2009), Oral
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21 |
G. Choi, J. Han, S. Lee, S. Kim, and C. Hwang A Mass-production Compatible Capacitor Technology for DRAMs with Design Rule Down to 20nm 215th ECS meeting, San Francisco, CA, May 24-29 (2009)
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