20 |
Byung Joon Choi, Seol Choi, Taeyong Eom, Cheol Seong Hwang and Suk Kyoung Hong Switching Power Reduction in Phase Change Memory Cell using CVD Ge2Sb2Te5 and Ultra-thin TiO2 Films MRS spring meeting, San Fransisco, CA April 13-17 (2009), Poster
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19 |
Seol Choi, Byung Joon Choi, Taeyoung Eom and Cheol Seong Hwang Investigation on the Growth Behavior of Ge Doped SbxTey Thin Films Deposited by a Plasma-enhanced CVD MRS spring meeting, San Fransisco, CA April 13-17 (2009), Poster |
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18 |
Hyung-Suk Jung, Tae Joo Park, Jeong Hwan Kim, Sang Young Lee, Joohwi Lee, Him Chan Oh, Kwang Duck Na, Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee, Cheol Seong Hwang Systematic Study on Bias Temperature Instability of Various High-k Gate Dielectrics ; HfO2, HfZrxOy and ZrO2 IRPS, Montreal, QC, Canada, April 26-30 (2009)
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17 |
Seung Wook Ryu, Jong Ho Lee, Yong Bae Ahn, Choon Hwan Kim, Cheol Seong Hwang, and Hyeong Joon Kim Dependency of Threshold Switching on Density of Localized states of Ge2Sb2Te5 Thin films for Phase Change Random Access Memory Á¦ 16ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, February 18~20 (2009), Poster
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16 |
Jeayeong Heo, Sanghyun Park, Sang Young Lee, Dail Eom, Cheol Seong Hwang, and Hyeong Joon Kim The Diffusion barrier properties of Ruthenium to Copper Á¦ 16ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, February 18~20 (2009), Poster |
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15 |
Taeyong Eom, Byung Joon Choi, Seol Choi, Tae Joo Park, Jeong Hwan Kim, Minha Seo, and Cheol Seong Hwang Capacitive memory characteristics using Ge2Sb2Te5 with Al2O3 blocking oxide
Á¦ 16ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, February 18~20 (2009), Poster
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14 |
Sang Woon Lee, Jeong Hwan Han, and Cheol Seong Hwang Improved Growth Behaviors of SrTiO3 Thin Films Using the Optimized Seed Layer deposited by Atomic Layer Deposition Á¦ 16ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, February 18~20 (2009), Poster
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13 |
ÀÌ»ó¿µ, ÃÖ±ÔÁø, ±è°æ¹Î, ³ª±¤´ö, ¼¹ÎÇÏ, ÀÌ»ó¿î, ÇÑÁ¤È¯, ¹Ú¿ì¿µ, Ȳö¼º ALD ¹æ¹ýÀ¸·Î ÁõÂøÇÑ TiO2/Ru ¹Ú¸·À» ÀÌ¿ëÇÑ ¹Ú¸·Çü ´ÙÃþ ¼¼¶ó¹Í Ä¿ÆÐ½ÃÅÍ(MLCC)ÀÇ Á¦Á¶ ¹× Ư¼º Á¦ 16ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, February 18~20 (2009), Poster |
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12 |
Jeong Hwan Han, Sang Woon Lee, Gyu Jin Choi, Sang Young Lee, Cheol Seong Hwang, Julien Gatineau, and Christian Dussarrat Pulsed-Chemical vapor deposition of Ruthenium thin films Using RuO4 precursor for the DRAM capacitor electrode Á¦ 16ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, February 18~20 (2009), Oral
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11 |
Byung Joon Choi, Seol Choi, Taeyong Eom, Seung Hwan Oh, Kyung-Woo Yi, Cheol Seong Hwang, Yoon Jung Kim, and Suk Kyoung Hong The role of TiO2 interfacial layer for the operation of PCRAM fabricated by using the chemical vapor deposited Ge2Sb2Te5 films Á¦ 16ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, February 18~20 (2009), Oral
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