18 |
Sung Keun Shim, Yoon Ho Jang, and Cheol Seong Hwang Time-Series Data Processing using 2Memristor-1Capacitor Integrated Temporal Kernel Á¦ 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster |
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17 |
Dohyun Kim, Taeyoung Jeong, Kun Hee Ye, Seungjae Yoon, Cheol Seong Hwang and Jung-Hae Choi Sub-stoichiometric Adaptive Phase of Conducting Filament in Ta2O5-based Resistive Switching Materials by First Principles Calculations Á¦30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster |
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16 |
Seungjae Yoon, Kun Hee Ye, Taeyoung Jeong, Dohyun Kim, Cheol Seong Hwang and Jung-Hae Choi Properties of the Conducting Filaments in HfO2-based Resistive Switching Materials by First Principles Calculations Á¦ 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2023³â 2¿ù 13-15ÀÏ, Poster |
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15 |
Taeyoung Jeong, Kun Hee Ye, Seung Jae Yoon, Dohyun Kim, Cheol Seong Hwang, and Jung-Hae Choi Charge transition mechanism to explain the eight-wise polarity in a Ti/TiO2/Pt ReRAM device
Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster |
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14 |
Sahngik Mun, Yonghee Lee, Sukin Kang, Jinheon Choi, Sunjin Lee, and Cheolseong Hwang Modulation of P-SnO Thin-Film Transistor Electrical Characteristics by Controlling the Al2O3 Interfacial Layer Annealing Temperature Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Po |
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13 |
Tae Kyun Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Heewon Paik, Jong Hoon Shin, and Cheol Seong Hwang Effect of Yttrium Feeding Time Change on Electric and Structural Property
of Y-doped TiO2 Films for DRAM Capacitor Applications Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Po |
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12 |
Kun Hee Ye, Taeyoung Jeoung, Seungjae Yoon, Cheol Seong Hwang, and Jung-Hae Choi First Principles-derived Process Optimization to Control the Phase Fractions of Ferroelectric and Antiferroelectric Hf1-xZrxO2 Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Oral
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11 |
Donghoon Shin, Sunwoo Lee, Hyo Cheon Woo, Yeong Rok Kim, Taegyun Park, and Cheol Seong Hwang Device characterization and modeling of forming-free RRAM for logic and neuromorphic application Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Po |
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10 |
Haewon Song, Bowen Wang, Yukyung Park, Daeson Kwon, and Cheol Seong Hwang Phase transition of BeO thin films by heavily doping MgO layers grown via atomic layer deposition dynamic random-access memory devices Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Po |
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9 |
Jang Uk Han, Yoon Ho Jang, and Cheol Seong Hwang Analysis of sneak current through n cell in the memristive-crossbar array Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster |
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