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12

Kyung Seok Woo, Yongmin Wang, Jihun Kim, Yumin Kim, Young Jae Kwon, Jung Ho Yoon, Woohyun Kim, and Cheol Seong Hwang

A True Random Number Generator Using Threshold-Switching-Based Memristors in an Efficient Circuit Design

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Poster

11

Sang Hyeon Kim, Cheol Hyun An, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, and Cheol Seong Hwang

The impact of the annealing temperature of the seed layer on the growth and the electrical properties of the main layers in atomic layer deposition of SrTiO3 films

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Oral

10

Kai Liu, Eunjung Ko, Cheol Seong Hwang, and Jung-Hae Choi

Density functional theory study on the interface structure of Ge oxide/Ge[001] nanowire

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Poster

9

Yong Bin Lee, Jang Ho Roh, Hyeon Woo Park, Keum Do Kim, Tae Hwan Moon, Yong Hwan Lee, Seung Dam Hyun, Baek Su Kim, Bum Yong Kim, Ho Hyun Kim, and Cheol Seong Hwang

Interfacial Oxide Engineering of Hafnium Zirconium Oxide-Based Ferroelectric Capacitors for Low Interfacial Trap Density in MFIS Capacitors

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Poster


8

Hyeon Woo Park, Yong Bin Lee, Jangho Roh, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Baek Su Kim, Ho Hyun Kim, Beom Yong Kim, Taehwan Moon, and Cheol Seong Hwang

Domani Wall Dynamics for Transient NC Effect in Ferroelectric BaTiO3 Thin Films

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Oral

7

Jangho Roh, H.W.Park, Y.B.Lee, S.D.Hyun, K.D.Kim, T.H.Moon, Y.H.Lee, B.S.Kim, B.Y.Kim, H.H.Kim, and C.S.Hwang

Ferroelectric Characteristics of Hf0.5Zr0.5O2-based Metal-Ferroelectric-Insulator- Semiconductor Capacitors for Steep-Slope transistor Applications

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Poster



6

Taehwan Moon, Hyun Jae Lee, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Jang Ho Roh, Beom Yong Kim, Ho Hyun Kim, and Cheol Seong Hwang

Threshold voltage shift of 2DEG-channel transistor and ternary logic inverting

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Poster

5

Gyuseung Han, In Won Yeu, Seung Cheol Lee, Cheol Seong Hwang and Jung-Hae Choi

Phase Diagram of Ga(As,Sb) and (In,Ga)As by Cluster Expansion and DFT Calculations

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Oral

4

Younjin Jang, In Won Yeu, Jun Shik Kim, Jeong Hwan Han, Jung-Hae Choi and Cheol Seong Hwang

Reduction of Hysteresis in p-Type Atomic Layer Deposited SnO Thin Film Transistors by Adopting Al2O3 Interfacial Layers

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Poster

3

In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi

Effect of the two-dimensional strain on the equilibrium crystal shape of GaAs by ab-initio thermodynamics

Á¦26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ À£¸®Èú¸®ÆÄÅ©, 2019³â 2¿ù 13-15ÀÏ, Oral