| 69 |
Sungjin Kim*, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Junwoo Park, Jekang Choi, and Cheol Seong Hwang Atomic Layer Deposition of High-Density GeSe for Stable Vertical Ovonic Threshold Switch and Selector-Only Memory E\PCOS 2026, Keizersberg Abbey, Sep 20 to 23, Poster |
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| 68 |
Junwoo Park*, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Seungjin Kim, Jekang Choi, and Cheol Seong Hwang Sacrificial Atomic Layer Deposition of Tellurium–Selenium Alloy Thin Films E\PCOS 2026, Keizersberg Abbey, Sep 20 to 23, Poster
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| 67 |
Sahngik Aaron Mun and Cheol Seong Hwang Adoption of Tin Monoxide on Atomic-Layer Deposited Indium-Gallium-Zinc Oxide Ferroelectric Thin-Film Transistors for Enhanced Program and Erase Operation 15th Korea-Japan Conference on Ferroelectrics (KJC-Fe15), KAIST, Daejeon, South Korea, 2026년 8월 26-29일, Oral |
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| 66 |
Min Kyu Yeom and Cheol Seong Hwang Proximity-Ferroelectricity in HfZrO2/AlScN Heterostructures for High-Density Non-volatile Memory 15th Korea-Japan Conference on Ferroelectrics (KJC-Fe15), KAIST, Daejeon, South Korea, 2026년 8월 26-29일, Poster |
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| 65 |
Seungheon Choi and Cheol Seong Hwang Polarization Evolution in Hf1-xZrxO2-based Thin Films Investigated by Delay- and Bias-Controlled PUND 15th Korea-Japan Conference on Ferroelectrics (KJC-Fe15), KAIST, Daejeon, South Korea, 2026년 8월 26-29일, Poster |
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| 64 |
Sanghyup Lee and Cheol Seong Hwang Enhancing polarization-dependent resistance modulation with minimal on-current degradation in HfO2-based ferroelectric tunnel junctions using an amorphous InGaZnO interlayer 15th Korea-Japan Conference on Ferroelectrics (KJC-Fe15), KAIST, Daejeon, South Korea, 2026년 8월 26-29일, Poster |
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| 63 |
Hyun Min Kim and Cheol Seong Hwang Impact of Ozone Dose Time during Atomic Layer Deposition of Hf1-xZrxO2 on the Memory Window of Ferroelectric Field-Effect Transistors 15th Korea-Japan Conference on Ferroelectrics (KJC-Fe15), KAIST, Daejeon, South Korea, 2026년 8월 26-29일, Poster |
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| 62 |
Minsub Um, Juneseong Choi, Hyungjeung Kim, Shihyun Kim and Cheol Seong Hwang Evaluation of One Transistor-One Capacitor Memory Cell with Amorphous InGaZnO-Channel via Fast Current-Voltage Measurements
PRICM12 2026, Gold Coast, Australia, 2026년 8월 9일-13일, Poster |
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| 61 |
Ho Jin Kim, Han Sol Park and Cheol Seong Hwang Effect of annealing after Al2O3 capping layer deposition on ferroelectric Hf0.5Zr0.5O2 thin films PRICM12 2026, Gold Coast, Australia, 2026년 8월 9일-13일, Poster |
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| 60 |
Sungeun Kim, Won Kim and Cheol Seong Hwang Influence of Defect-Induced Conductivity in ZnO Channels on the Memory Window of Ferroelectric Thin Film Transistors PRICM12 2026, Gold Coast, Australia, 2026년 8월 9일-13일, Poster |
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