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29

Jonghoon Shin, Tae Kyun Kim, Heewon Paik, Haewon Song and Cheol Seong Hwang*

High-Performance Dynamic Random Access Memory Capacitor with an Equivalent Oxide Thickness of 0.31 nm via Stepwise Cycling in Y-doped Hf0.5Zr0.5O2 Thin Films

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Oral

28

Hyun Min Kim, Kilhwa Pi and Cheol Seong Hwang

Enhancing Memory Window of Hf0.5Zr0.5O2-based Ferroelectric Field-Effect Transistors by Controlling Ozone Dose Time in Atomic Layer Deposition

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, poster 

 

27

Seong Jae Shin, Min Jong Kim, Cheol Seong Hwang*

Variations in the Ferroelectric Properties of Hf0.5Zr0.5O2 Depending on the Hafnium Nitride Electrode Conditions

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster

26

Seong Jae Shin, Cheol Seong Hwang*

Wake-Up-Free Ferroelectricity in Ultrathin (5 nm) Hf0.5Zr0.5O2 with Molybdenum Bottom Electrode

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster

25

Hyungjun Park, Kyung Seok Woo, Suhas Kumar, and Cheol Seong Hwang

Memristors with Tunable Volatility for reconfigurable Neurmorphic computing

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster

24

Hyun Woo Nam, Dong Jae Kim, Kyung Do Kim, and Cheol Seong Hwang

Memor Memory Window Improvement in Ferroelectric Thin-Film Transistors with Fluorite/Wurtzite Bilayers Grown by Atomic Layer Deposition

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster

23

S.Kim, D.H. Shin, W.Choi and Cheol Seong Hwang

Spatiotemporal Reservoir Computing with a Reconfigurable Multifunctional Memristor Array

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster

22

Yu Lin Zou, Sunwoo Cheong and Cheol Seong Hwang

Linear Memristor Synapse with Mechanism Elucidation for Online Training in Spiking Neural Networks

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster

21

Sangmin Jeon¢Ó, Gwangsik Jeon¢Ó, Seunghwan Lee, Jeong Woo Jeon, Wonho Choi, Byongwoo Park, Sungjin Kim, Junwoo Park, Chanyoung Yoo, Hyejin Jang and Cheol Seong Hwang*

Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Oral

20

Won Kim, Sung Eun Kim and Cheol Seong Hwang

Ferroelectric Thin-Film Transistors with Indium Gallium Zinc Oxide Channels: Effects of Stack Thickness Scaling

Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster