| 29 |
Jonghoon Shin, Tae Kyun Kim, Heewon Paik, Haewon Song and Cheol Seong Hwang* High-Performance Dynamic Random Access Memory Capacitor with an Equivalent Oxide Thickness of 0.31 nm via Stepwise Cycling in Y-doped Hf0.5Zr0.5O2 Thin Films Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Oral |
 |
| 28 |
Hyun Min Kim, Kilhwa Pi and Cheol Seong Hwang
Enhancing Memory Window of Hf0.5Zr0.5O2-based Ferroelectric Field-Effect Transistors by Controlling Ozone Dose Time in Atomic Layer Deposition Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, poster |
 |
| 27 |
Seong Jae Shin, Min Jong Kim, Cheol Seong Hwang* Variations in the Ferroelectric Properties of Hf0.5Zr0.5O2 Depending on the Hafnium Nitride Electrode Conditions Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster |
 |
| 26 |
Seong Jae Shin, Cheol Seong Hwang* Wake-Up-Free Ferroelectricity in Ultrathin (5 nm) Hf0.5Zr0.5O2 with Molybdenum Bottom Electrode Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster |
 |
| 25 |
Hyungjun Park, Kyung Seok Woo, Suhas Kumar, and Cheol Seong Hwang Memristors with Tunable Volatility for reconfigurable Neurmorphic computing Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster |
 |
| 24 |
Hyun Woo Nam, Dong Jae Kim, Kyung Do Kim, and Cheol Seong Hwang Memor Memory Window Improvement in Ferroelectric Thin-Film Transistors with Fluorite/Wurtzite Bilayers Grown by Atomic Layer Deposition Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster |
 |
| 23 |
S.Kim, D.H. Shin, W.Choi and Cheol Seong Hwang Spatiotemporal Reservoir Computing with a Reconfigurable Multifunctional Memristor Array Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster |
 |
| 22 |
Yu Lin Zou, Sunwoo Cheong and Cheol Seong Hwang Linear Memristor Synapse with Mechanism Elucidation for Online Training in Spiking Neural Networks Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster |
 |
| 21 |
Sangmin Jeon¢Ó, Gwangsik Jeon¢Ó, Seunghwan Lee, Jeong Woo Jeon, Wonho Choi, Byongwoo Park, Sungjin Kim, Junwoo Park, Chanyoung Yoo, Hyejin Jang and Cheol Seong Hwang* Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ (ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Oral |
 |
| 20 |
Won Kim, Sung Eun Kim and Cheol Seong Hwang Ferroelectric Thin-Film Transistors with Indium Gallium Zinc Oxide Channels: Effects of Stack Thickness Scaling Á¦ 33ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2026³â 1¿ù 28-30ÀÏ, Poster |
 |