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13

Hyungjun Park, Janguk Han, Yoon Ho Jang, Dong Hoon Shin, Kyung Seok Woo, and Cheol Seong Hwang

Cyclic Plasma Treatment for Enhancing
Performance of Bulk-Conductive Resistive Switching Memory

The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster

12

In Kyung Baek, Soo Hyung Lee, Yoon Ho Jang, Hyungjun Park, Jaehyun Kim, Sunwoo Cheong, Sung Keun Shim, Joon-Kyu Han, Gwang Sik Jeon, Dong Hoon Shin, Kyung Seok Woo, and Cheol Seong Hwang

Implementation of Bayesian Network and Bayesian Inference using Cu0.1Te0.9/HfO2/Pt Threshold Switching Memristor

The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster

11
Byongwoo Park, Jeong Woo Jeon, Wonho Choi, Gwang Sik Jeon, Sangmin Jeon, Sungjin Kim, Junyoung Lim, Yonghun Sung, David Ahn, and Cheol Seong Hwang

Atomic Layer Deposition of Sn-doped GeSe2 for As-free Ovonic Threshold Switch with Low Off-current

The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster

10

Jea Min Cho, Taegyun Park, and Cheol Seong Hwang

Concealable Physical Unclonable Function generation and In-Memory Encryption machine based on Vertical Self-Rectifying Memristors

The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster

 

9

Juneseong Choi, Jinheon Choi, Yonghee Lee, Sukin Kang, Sahngik Aaron Mun, Jaewon Ham, Hyungjeung Kim, Shihyun Kim, Subin Moon, and Cheol Seong Hwang

Improving Electrical Performances of Amorphous Zn-Sn-O Thin-Film Transistor through Al Doping for Next-Generation DRAM Channel Materials

The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster

8

Jinheon Choi, Yonghee Lee, Sukin Kang, Sahngik Aaron Mun, and Cheol Seong Hwang

Optimizing the Performance of the Atomic-Layer-Deposited Zinc-Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing

The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster 

7

Jeong Woo Jeon, Byongwoo Park, Sangmin Jeon, Wonho Choi, Gwangsik Jeon, Sungjin Kim, Junyoung Lim, Yonghun Sung, David Ahn, and Cheol Seong Hwang

Study of Performance and Structural Effects in Vertical Selector-Only Memory

The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster 

6

Han Sol Park, Seungheon Choi, Kyung Do Kim, Min Kyu Yeom, Suk Hyun Lee, Seung Kyu Ryoo, and Cheol Seong Hwang

Optimization of the 4-nm-thick Hf1-xZrxO2 film with low operating voltage and high endurance for ferroelectric random access memory

4th Japan-Korea Conference on Ferroelectricity (JKC-FE4), Ritsumeikan University, Aug. 29 to Sep. 1, 2024, Poster

5
Seung Kyu Ryoo, and Cheol Seong Hwang*
Influence of HfN0.4 Bottom Electrode Oxidation on AlScN Thin Films:A Comparative Study of In-situ and Ex-situ Deposition at Bottom and Top Interfaces 
4th Japan-Korea Conference on Ferroelectricity (JKC-FE4), Ritsumeikan University, Aug. 29 to Sep. 1, 2024, Poster
4

Donghyung Lee, Youngsin Kim, Sunghyun Kim, Junil Lim, Heewon Paik, Jong Hoon Shin, Dae Seon Kwon and Cheol Seong Hwang 

Suppression of Ru-loss and crystallization of SrRuO3 films via optimization of initial RTA steps

24th International Conference on Atomic Layer Deposition, Helsinki, Finland, August 4 to 7, Poster