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Hyungjun Park, Janguk Han, Yoon Ho Jang, Dong Hoon Shin, Kyung Seok Woo, and Cheol Seong Hwang Cyclic Plasma Treatment for Enhancing
Performance of Bulk-Conductive Resistive Switching Memory The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster |
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In Kyung Baek, Soo Hyung Lee, Yoon Ho Jang, Hyungjun Park, Jaehyun Kim, Sunwoo Cheong, Sung Keun Shim, Joon-Kyu Han, Gwang Sik Jeon, Dong Hoon Shin, Kyung Seok Woo, and Cheol Seong Hwang Implementation of Bayesian Network and Bayesian Inference using Cu0.1Te0.9/HfO2/Pt Threshold Switching Memristor The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster |
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Byongwoo Park, Jeong Woo Jeon, Wonho Choi, Gwang Sik Jeon, Sangmin Jeon, Sungjin Kim, Junyoung Lim, Yonghun Sung, David Ahn, and Cheol Seong Hwang Atomic Layer Deposition of Sn-doped GeSe2 for As-free Ovonic Threshold Switch with Low Off-current The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster |
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10 |
Jea Min Cho, Taegyun Park, and Cheol Seong Hwang Concealable Physical Unclonable Function generation and In-Memory Encryption machine based on Vertical Self-Rectifying Memristors The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster |
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9 |
Juneseong Choi, Jinheon Choi, Yonghee Lee, Sukin Kang, Sahngik Aaron Mun, Jaewon Ham, Hyungjeung Kim, Shihyun Kim, Subin Moon, and Cheol Seong Hwang Improving Electrical Performances of Amorphous Zn-Sn-O Thin-Film Transistor through Al Doping for Next-Generation DRAM Channel Materials The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster |
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Jinheon Choi, Yonghee Lee, Sukin Kang, Sahngik Aaron Mun, and Cheol Seong Hwang Optimizing the Performance of the Atomic-Layer-Deposited Zinc-Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster |
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Jeong Woo Jeon, Byongwoo Park, Sangmin Jeon, Wonho Choi, Gwangsik Jeon, Sungjin Kim, Junyoung Lim, Yonghun Sung, David Ahn, and Cheol Seong Hwang Study of Performance and Structural Effects in Vertical Selector-Only Memory The 22nd IEEE Non-Volatile Memory Technology Symposium (NVMTS 2024), Paradise Hotel Busan (Haeundae Beach), Oct 20th - 23rd, Poster |
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Han Sol Park, Seungheon Choi, Kyung Do Kim, Min Kyu Yeom, Suk Hyun Lee, Seung Kyu Ryoo, and Cheol Seong Hwang Optimization of the 4-nm-thick Hf1-xZrxO2 film with low operating voltage and high endurance for ferroelectric random access memory 4th Japan-Korea Conference on Ferroelectricity (JKC-FE4), Ritsumeikan University, Aug. 29 to Sep. 1, 2024, Poster |
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Seung Kyu Ryoo, and Cheol Seong Hwang* Influence of HfN0.4 Bottom Electrode Oxidation on AlScN Thin Films:A Comparative Study of In-situ and Ex-situ Deposition at Bottom and Top Interfaces 4th Japan-Korea Conference on Ferroelectricity (JKC-FE4), Ritsumeikan University, Aug. 29 to Sep. 1, 2024, Poster |
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4 |
Donghyung Lee, Youngsin Kim, Sunghyun Kim, Junil Lim, Heewon Paik, Jong Hoon Shin, Dae Seon Kwon and Cheol Seong Hwang Suppression of Ru-loss and crystallization of SrRuO3 films via optimization of initial RTA steps 24th International Conference on Atomic Layer Deposition, Helsinki, Finland, August 4 to 7, Poster |
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