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20

Heewon Paik and Cheol Seong Hwang

Promoted Crystallization of SrTiO3 Thin Film for DRAM Capacitor by Inserting GeOx Buffer Layer in Ru/SrTiO3/RuO2

23rd International Conference on Atomic Layer Deposition, Bellevue, USA, July 23 to 26, Poster

19

Heewon Paik, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim and Cheol Seong Hwang

Enhanced Crystallization Behavior by GeOx Insertion in Ru/SrTiO3/RuO2 Capacitor for DRAM

Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster

18

Sung Keun Shim, Yoon Ho Jang, and Cheol Seong Hwang

Time-Series Data Processing using 2Memristor-1Capacitor Integrated Temporal Kernel

Á¦ 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster

17
Dohyun Kim, Taeyoung Jeong, Kun Hee Ye, Seungjae Yoon, Cheol Seong Hwang and Jung-Hae Choi

Sub-stoichiometric Adaptive Phase of Conducting Filament in Ta2O5-based Resistive Switching Materials by First Principles Calculations

Á¦30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster

16

Seungjae Yoon, Kun Hee Ye, Taeyoung Jeong, Dohyun Kim, Cheol Seong Hwang and Jung-Hae Choi

Properties of the Conducting Filaments in HfO2-based Resistive Switching Materials by First Principles Calculations

Á¦ 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2023³â 2¿ù 13-15ÀÏ, Poster

15

Taeyoung Jeong, Kun Hee Ye, Seung Jae Yoon, Dohyun Kim, Cheol Seong Hwang, and Jung-Hae Choi

Charge transition mechanism to explain the eight-wise polarity in a Ti/TiO2/Pt ReRAM device

Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Poster

14

Sahngik Mun, Yonghee Lee, Sukin Kang, Jinheon Choi, Sunjin Lee, and Cheolseong Hwang

Modulation of P-SnO Thin-Film Transistor Electrical Characteristics by Controlling the Al2O3 Interfacial Layer Annealing Temperature

Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Po

13

Tae Kyun Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Heewon Paik, Jong Hoon Shin, and Cheol Seong Hwang

Effect of Yttrium Feeding Time Change on Electric and Structural Property
of Y-doped TiO
2 Films for DRAM Capacitor Applications

Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Po

12

Kun Hee Ye, Taeyoung Jeoung, Seungjae Yoon, Cheol Seong Hwang, and Jung-Hae Choi

First Principles-derived Process Optimization to Control the Phase Fractions of Ferroelectric and Antiferroelectric Hf1-xZrxO2

Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Oral

11

Donghoon Shin, Sunwoo Lee, Hyo Cheon Woo, Yeong Rok Kim, Taegyun Park, and Cheol Seong Hwang 

Device characterization and modeling of forming-free RRAM for logic and neuromorphic application

Á¦ 30ȸ ¹ÝµµÃ¼Çмú´ëȸ, °­¿øµµ ÇÏÀÌ¿ø ±×·£µåÈ£ÅÚ(ÄÁº¥¼ÇŸ¿ö), 2023³â 2¿ù 13-15ÀÏ, Po