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Sukin Kang, Jun Shik Kim, Younjin Jang, Yonghee Lee, Kwangmin Kim, Whayoung Kim and Cheol Seong Hwang* Program/Erase characteristics of charge trap flash using atomic layer deposited (Zn,Sn)Ox channel layer Hymap 2020-Special, ºÎ»ê ÇØ¿î´ë ±×¸°³ª·¡ È£ÅÚ, 2020³â 11¿ù 24ÀÏ-27ÀÏ, Poster |
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Younjin Jang, Jun Shik Kim, Sukin Kang, Jihun Kim, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Heerang Choi, Nayeon Kim, Taeyong Eom, Taek-Mo Chung, Woojin Jeon, Sang Yoon Lee, Cheol Seong Hwang Abnormal Electrical Properties in p-type SnO Thin-Film Transistors with Al2O3 Interfacial layer Çѱ¹¼¼¶ó¹ÍÇÐȸ, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, 2020³â 11¿ù 23ÀÏ-25ÀÏ, Oral
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¹éÀÎȯ, ÆíÁ¤ÁØ, Á¶¾ÆÁø, ¿ø¼º¿Á, Á¤Åøð, Ȳö¼º, ±è¼º±Ù Cation-Regulated Transformation Process for Uniform p-SnS Thin Film Deposition at Low Temperatures Çѱ¹ Àü±âÀüÀÚÀç·áÇÐȸ ÇϰèÇмú´ëȸ, Æòâ, July 08-10 (2020), Oral |
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19 |
In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi Effects of growth condition on the anisotropic growth and stacking behavior of GaAs polar nanowires: ab initio thermodynamics Nano Korea 2020, Goyang, July 1-3 (2020), Oral
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18 |
Gyuseung Han, In Won Yeu, Kun Hee Ye, Seung-Cheol Lee, Cheol Seong Hwang, and Jung-Hae Choi Effects of composition and atomic configuration on the bandgap of Ga(As,Sb) solid solution using cluster expansion and ab initio thermodynamics Nano Korea 2020, Goyang, July 1-3 (2020), Oral
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17 |
Seung Dam Hyun, Baek Su Kim, Min Hyuk Park, Cheol Seong Hwang A comparative study on the ferroelectric performances in atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) and tetrakis(dimethylamino) precursors Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2020³â 2¿ù 12-14ÀÏ, Oral |
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16 |
Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Haeng Ha Seo, and Cheol Seong Hwang* Improvement in the surface morphology of the bottom Ru electrode for DRAM capacitor Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2020³â 2¿ù 12-14ÀÏ, Oral |
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Yong Bin Lee, Hyeon Woo Park, Young Hwan Lee, Seung Dam Hyun, Bum Yong Kim, Hyun Ho Kim, and Cheol Seong Hwang Polarization Switching and Discharging Behaviors of Hafnium Zirconium Oxide Based Ferroelectric Capacitors Connected with Paraelectric Capacitors Á¦ 27ȸ ¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 2020³â 2¿ù 12-14ÀÏ, Poster |
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14 |
Nuo Xu, Tae Gyun Park, Ha Jin Kim, Xinglong Shao, Kyun Jean Yoon, Tae Hyung Park, Liang Fang, Kyung Min Kim, and Cheol Seong Hwang Introduction of new APBM Stateful Logics based on two antiparallel bipolar memristors Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 20³â 2¿ù 12-14ÀÏ, Oral |
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In-Hwan Baek, Jung Joon Pyeon, Ga-Yeon Lee, Young Geun Song, Han sol Lee, Sung Ok Won, Taek-Mo Chung, Jeong Hwan Han, Chong-Yun Kang, Cheol Seong Hwang, and Seong Keun Kim Cation-Regulated Transformation Process for 2-D Tin Monosulfide Thin Film Deposition Á¦ 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ÇÏÀÌ¿ø¸®Á¶Æ®, 20³â 2¿ù 12-14ÀÏ, Oral |
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