11 |
Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min-Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, and Cheol Seong Hwang Diode Characteristics of the Pt/Al2O3/SrTi03 Structure with Two-Dimensional Electron Gas and Its Time-Dependent Resistance Evolution Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, oral |
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10 |
Hae Jin Kim, Kyung Jean Yoon, Tae Hyung Park, Han Joon Kim, Young Jae Kwon, Xing Long Shao, Dae Eun Kwon, Yu Min Kim, and Cheol Seong Hwang Resistive switching behavior of Pt/TiO2/Cu electrochemical metallization device governed by the interplay between the field and thermal effects Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, poster |
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9 |
Han Joon Kim, Min Hyuk Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, and Cheol Seong Hwang Involvement of an intermediate nonpolar phase during polarization switching in the Hf0.4Zr0.6O2 thin Films Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, oral |
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8 |
Yumin Kim, Jung Ho Yoon, Dae Eun Kwon, Young Jae Kwon, Tae Hyung Park, Hae Jin Kim, Kyung Jean Yoon, Xing Long Shao, and Cheol Seong Hwang Vertical Structure Memory Device for High Density 3D ReRAM Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, poster |
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7 |
Dong Gun Kim, Jae-Ho Lee, Hyun Jae Lee, and Cheol Seong Hwang Passivation layer effects on Ge substrate for TiO2 gate dielectric layer Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, poster |
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6 |
Keum Do Kim, Min Hyuk Park, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Seung Dam Hyun, Hyeonwoo Park, and Cheol Seong Hwang Stabilization of tetragonal phase in Hf0.5Zr0.5O2 thin films induced by low deposition temperature during atomic layer deposition Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, oral |
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5 |
Taehong Gwon, Taeyong Eom, Sijung Yoo, Eui-sang Park, Sanggyun Kim, Chanyoung Yoo, Han-Koo Lee, Deok-Yong Cho, Moo-sung Kim, Iain Buchanan, Manchao Xiao, Sergei Ivanov, and Cheol Seong Hwang Mechanism Study on The Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, oral |
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4 |
Young Jae Kwon, Jung Ho Yoon, Yu Min Kim, Dae Eun Kwon, Tae Hyung Park, Kyung Jin Yoon, Hae Jin Kim, Xing Long Shao and Cheol Seong Hwang Improving Resistive Switching Uniformity by Embedding Au Nanodots in the Pt/Ta2O5/HfO2-x/TiN Structure Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, oral |
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3 |
Daeeun Kwon, Jung Ho Yoon, Kyung Jean Yoon, Tae Hyung Park, Hae Jin Kim, Xinglong Shao, Yumin Kim, Young Jae Kwon, and Cheol Seong Hwang Low Power and Forming-free Resistive Switching Property of Pt/Al2O3/SiNx/Ti Device Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, poster |
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2 |
Nuo Xu, Kyung Min Kim, Kyung Jean Yoon, Hae Jin Kim, Xing Long Shao, Xi Wen Hu, Liang Fang, and Cheol Seong Hwang A New Concept of Stateful Logic Using CRS//BRS Sub-Circuit Á¦ 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °¿øµµ ´ë¸íºñ¹ßµðÆÄÅ©, 2017³â 2¿ù 13ÀÏ-15ÀÏ, oral |
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