Woojin Jeon, Sijung Yoo, Hyo Kyeom Kim, Woongkyu Lee, Cheol Hyun An, Min Jung Chung, and Cheol Seong Hwang

Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4nm from an Al-doped TiO₂ film

제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, oral

Taehong Gwon, Taeyong Eom, Sijung Yoo, Moo-Sung Kim, Lain Buchanan, Manchao Xiao, and Cheol Seong Hwang

Atomic Layer Deposition of chalcogenide novel Ge precursor

제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, oral

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo-Sung Kim, Lain Buchanan, Manchao Xiao, and Cheol Seong Hwang

Conformal Formation of Ge₂Sb₂Te₅ film for phase change memories realized by controlling non-ideal behaviors of ALD

제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, oral

Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, and Cheol Seong Hwang

Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films with Al₂O₃ inter-layer as a Serial Resistor on Ferroelectric Switching

제 22회 한국반도체학술대회, 송도컨벤시아, 2015년 2월 10일-12일, oral

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, and Cheol Seong Hwang

Thin Hf_xZr_1-xO₂ Films (x=0.1-0.4) for a Monolithic Device for Various Energy-related Applications

제 22회 한국반도체학술대회, 송도컨벤시아, 2015년 2월 10일-12일, oral

H. J. Kim, M. H. Park, Y. J. Kim, T. Moon, K. D. Kim,  Y. H. Lee, and C. S. Hwang

Study on the wake-up phenomenon of ferroelectric Hf_0.5Zr_0.5O₂ thin films by polarization switching and discharge behavior

제 11차 강유전체 연합심포지엄, 무주리조트, 2015년 2월 1-3일, poster

Y. J. Kim, M. H. Park, Y. H. Lee, H. J. Kim, W. Jeon, T. Moon, K. D. Kim,  D. S. Jeong, H. Yamada, and C. S. Hwang

A New Approach to the Negative Capacitance of Ferroelectric Thin Films

제 11차 강유전체 연합심포지엄, 무주리조트, 2015년 2월 1-3일, poster

M. H. Park, H. J. Kim, Y. J. Kim, T. Moon, K. D. Kim, Y. H. Lee, and C. S. Hwang

Antiferroelectric Hf_xZr_1-xO₂ thin films for the energy-related applications

제 11차 강유전체 연합심포지엄, 무주리조트, 2015년 2월 1-3일, oral