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Eun Suk Hwang, Un Ki Kim, Seung-Jun Lee, Jun Shik Kim, Younjin Jang, and Cheol Seong Hwang Investigation on the effect of post deposition annealing on the Sn-doped In2O3 thin film transistor 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 18 |
Min Jung Chung, Woongkyu Lee, Woojin Jeon, Cheol Hyun An, and Cheol Seong Hwang Comparison of H2O and O3 as oxidant in atomic layer deposition of STO films 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 17 |
Cheol Hyun An, Woongkyu Lee, Woojin Jeon, Min Jung Chung, and Cheol Seong Hwang ALD-like growth behavior of Ru thin film with RuO4 precursor 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 16 |
Dae Eun Kwon, Jung Ho Yoon, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Tae Hyung Park, Hae Jin Kim, Xinglong Shao, Young Jae Kwon, and Cheol Seong Hwang Pt/SiNx/Pt and TiN/SiNx/Pt for ReRAM device 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 15 |
Hae Jin Kim, Kyung Jean Yoon, Seul Ji Song, Jung Ho Yoon, Dae Eun Kwon, Tae Hyung Park, Yeong Jae Kwon, and Cheol Seong Hwang Effect of physical/chemical characteristics of electrolyte on the cation migration in electro-chemical metallization cell 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 14 |
Tae Hyung Park, Seul Ji Song, Dong Gun Kim, Young Jae Kwon, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Dae Eun Kwon, Hae Jin Kim, and Cheol Seong Hwang Asymmetric bipolar resistive switcing in a Pt/Ta2O5/ZrO2/TiN structure 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 13 |
Authors Jaehong Park, Cheol Seong Hwang, and Jung-Hae Choi Effect of stacking sequence on the electronic properties of layered MoS2: Polytypism and Heterostructure 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 12 |
Liu Kai, Cheol Seong Hwang, and Jung-Hae Choi Effects of oxygen adatoms on the atomic and electronic structures of various Ge surfaces by Ab-Initio study 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, poster
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| 11 |
Sijung Yoo, Taeyong Eom, Taehong Gwon, and Cheol Seong Hwang Bipolar resistive switching of amorphous Ge2Sb2Te5 thin film without involving phase change 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, oral
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| 10 |
Jung Ho Yoon, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park, Young Jae Kwon, and Cheol Seong Hwang Electronic type self-rectifying resistive switching memory with excellent uniformity and multi-level functionality in Pt/Ta2O5/HfO2-x/Ti structure 제 22회 한국반도체학술대회, 인천 송도컨벤시아, 2015년 2월 10일-12일, oral
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