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9

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Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Poster

8

Woongkyu Lee, Jeong Hwan Han, Sora Han, Sang Woon Lee and Cheol Seong Hwang

Controlling initial growth of ALD-SrTiO3 films with interposed ALD-Al2O3 layers

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Poster

7

ÀÌÇöÁÖ, ¹Ú¹ÎÇõ, ±èÀ¯Áø, ±è°Çȯ, ¼®ÁØ¿µ, Anquan Jiang, Ȳö¼º

Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr, Ti)O3/Pt and paraelectric capacitors

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Poster

6

Hyung-Suk Jung, Hyo Kyeom Kim, Sang-ho Rha, Sang Young Lee, Joowhi Lee,Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee, Cheol Seong Hwang

The origin of enhanced nMOS PBTI characteristics of ZrO2 compared to HfO2

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral

5

Sang-ho Rha, Hyung-Suk Jung,Ji-Sim Jung, Hyo Kyeom Kim, Young Gwang Yoon, Cheol Seong Hwang

A dielectric leakage model in extremely scaled MIS structures with quantum mechanical considerations

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral

4

Jeong Hwan Han, Woongkyu Lee, Sora Han, Julien Gatineau, and Cheol Seong Hwang

Atomic layer/chemical vapor deposited SrRuO3 thin films using RuO4 and Sr(iPr3Cp)2 precursors for next generation DRAM capacitor electrode

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral

3

Taeyong Eom, Seol Choi, Byung Joon Choi, Sang Ho Rha, Woongkyu Lee, Cheol Seong Hwang, Moo-Sung Kim, Manchao Xiao

Atomic Layer Deposition of (GeTe2)x(Sb2Te3)y films for phase change memories

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral

2

Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Min Kim, Gun Hwan Kim, Min Hwan Lee and Cheol Seong Hwang

Johnson-Mehl-Avrami type kinetic model for identifying the evolution of conducting nanofilaments in TiO2 ReRAM

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇغñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral

1

Gun Hwan Kim, Kyung Min Kim, Jun yeong Seok, Seul Ji Song, Jung Ho Yoon, and Cheol Seong Hwang

A Review on Cross-bar Array Memory using Resistance Switching Thin Films

Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ