9 |
À±Á¤È£, ±è°æ¹Î, À̹Îȯ, ±è¼º±Ù, ±è°Çȯ, ¼Û½½Áö, ¼®ÁØ¿µ, Ȳö¼º Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Poster |
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8 |
Woongkyu Lee, Jeong Hwan Han, Sora Han, Sang Woon Lee and Cheol Seong Hwang Controlling initial growth of ALD-SrTiO3 films with interposed ALD-Al2O3 layers Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Poster |
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7 |
ÀÌÇöÁÖ, ¹Ú¹ÎÇõ, ±èÀ¯Áø, ±è°Çȯ, ¼®ÁØ¿µ, Anquan Jiang, Ȳö¼º Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr, Ti)O3/Pt and paraelectric capacitors Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Poster |
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6 |
Hyung-Suk Jung, Hyo Kyeom Kim, Sang-ho Rha, Sang Young Lee, Joowhi Lee,Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee, Cheol Seong Hwang The origin of enhanced nMOS PBTI characteristics of ZrO2 compared to HfO2 Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral |
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5 |
Sang-ho Rha, Hyung-Suk Jung,Ji-Sim Jung, Hyo Kyeom Kim, Young Gwang Yoon, Cheol Seong Hwang A dielectric leakage model in extremely scaled MIS structures with quantum mechanical considerations Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral |
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4 |
Jeong Hwan Han, Woongkyu Lee, Sora Han, Julien Gatineau, and Cheol Seong Hwang Atomic layer/chemical vapor deposited SrRuO3 thin films using RuO4 and Sr(iPr3Cp)2 precursors for next generation DRAM capacitor electrode Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral |
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3 |
Taeyong Eom, Seol Choi, Byung Joon Choi, Sang Ho Rha, Woongkyu Lee, Cheol Seong Hwang, Moo-Sung Kim, Manchao Xiao Atomic Layer Deposition of (GeTe2)x(Sb2Te3)y films for phase change memories Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral |
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2 |
Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Min Kim, Gun Hwan Kim, Min Hwan Lee and Cheol Seong Hwang Johnson-Mehl-Avrami type kinetic model for identifying the evolution of conducting nanofilaments in TiO2 ReRAM Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ, Oral |
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1 |
Gun Hwan Kim, Kyung Min Kim, Jun yeong Seok, Seul Ji Song, Jung Ho Yoon, and Cheol Seong Hwang A Review on Cross-bar Array Memory using Resistance Switching Thin Films Á¦ 18ȸ Çѱ¹ ¹ÝµµÃ¼ Çмú´ëȸ, ÇØºñÄ¡ È£ÅÚ & ¸®Á¶Æ® Á¦ÁÖ, 2011³â 2¿ù 16ÀÏ-18ÀÏ |
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