| 26 |
Jeong Hwan Kim, Tae Joo Park, Moon Ju Cho, Min Ha Seo, Jae Hyuck Jang, Cheol Seong Hwang The Improvement In Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO2 Thin Films by in-situ NH3 Injection The Electrochemical Society 210th meeting, Moon Palace Resorts, Cancun, Mexico, October 26–November 3 (2006) |
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| 25 |
Da Il Eom, Cheol Seong Hwang Thermal Stability of Stack Structures of AlN and La2O3 Thin Films The Electrochemical Society 210th meeting, Moon Palace Resorts, Cancun, Mexico, October 26–November 3 (2006) |
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| 24 |
Byung Joon Choi, Cheol Seong Hwang Cyclic Plasma-Enhanced Chemical Vapor Deposition of Ge2Sb2Te5 Films using Metal-Organic Sources for Phase Change RAM The Electrochemical Society 210th meeting, Moon Palace Resorts, Cancun, Mexico, October 26–November 3 (2006) |
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| 23 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Cheol Seong Hwang Comparison of Electrical and Structural Properties of HfO2 Thin Films on Strained and Relaxed Si1-xGex The Electrochemical Society 210th meeting, Moon Palace Resorts, Cancun, Mexico, October 26–November 3 (2006) |
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| 22 |
Gyu Weon Hwang, Cheol Seong Hwang Atomic Layer Deposition of PbTiO3 thin films for ferroelectric memory applications Atomic Layer Deposition 2006, Hotel-Seoul Kyoyuk MunHwa Hoekwan, Seoul, Korea, July 24-26 (2006) |
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| 21 |
Jaewon Song, Cheol Seong Hwang Deposition of ZnO thin films by Atomic Lyer Deposition and fabrication of MIS capacitors using the ZnO layer as a semiconductor layer Atomic Layer Deposition 2006, Hotel-Seoul Kyoyuk MunHwa Hoekwan, Seoul, Korea, July 24-26 (2006) |
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| 20 |
Moonju Cho, Cheol Seong Hwang, Inter-university Microelectronic center; Robin Degraeve, Geoffrey Pourtois, Annelies Delabie, Lars-Ake Ragnarsson, Thomas Kauerauf, Guid Groesseneken, Stefan De Gendt, Marc Heyns Reliability impact of chlorine precursor residues in thin Atomic Layer Deposited HfO2 layers Atomic Layer Deposition 2006, Hotel-Seoul Kyoyuk MunHwa Hoekwan, Seoul, Korea, July 24-26 (2006) |
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| 19 |
Minha Seo, Seong Keun Kim, Kyung-Min Kim, Cheol Seong Hwang Physical and Electrical Properties of atomic layer deposited HfO2 Films using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) as Precursor and O3 as Oxidant Atomic Layer Deposition 2006, Hotel-Seoul Kyoyuk MunHwa Hoekwan, Seoul, Korea, July 24-26 (2006) |
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| 18 |
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Cheol Seong Hwang Correlation between the composition and the electrical properties of atomic-layer-deposited high-k HfO2 thin films on Si Atomic Layer Deposition 2006, Hotel-Seoul Kyoyuk MunHwa Hoekwan, Seoul, Korea, July 24-26 (2006) |
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| 17 |
Sang Woon Lee, Jeong Hwan Han, Cheol Seong Hwang SrTiO3 Thin Film Growth by Atomic Layer Deposition Atomic Layer Deposition 2006, Hotel-Seoul Kyoyuk MunHwa Hoekwan, Seoul, Korea, July 24-26 (2006) |
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